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| Number | Title | Issue Date |
| 8173213 | Process stability of NBDE using substituted phenol stabilizers A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH Formula (I) ... | 05/08/2012 |
| 8097303 | Methods for producing multilayered, oxidation-resistant structures on substrates Methods for producing multilayered, oxidation-resistant structures on substrates are provided. The methods comprise depositing silicon dioxide on a substrate comprising molybdenum and boron and annealing the silicon dioxide at a temperature and for a time sufficient... | 01/17/2012 |
| 7695765 | Methods for producing low-stress carbon-doped oxide films with improved integration properties Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant ( | 04/13/2010 |
| 7645486 | Method of manufacturing a silicon dioxide layer The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapor deposition (LPCVD) process, the deposition process employing simultaneously a ... | 01/12/2010 |
| 7431966 | Atomic layer deposition method of depositing an oxide on a substrate The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the... | 10/07/2008 |
| 7425350 | Apparatus, precursors and deposition methods for silicon-containing materials A method for making a Si-containing material comprises transporting a pyrolyzed Si-precursor to a substrate and polymerizing the pyrolyzed Si-precursor on the substrate to form a Si-containing film. Polymerization of the pyrolyzed Si-precursor may be carried out in ... | 09/16/2008 |
| 7410671 | Sequential chemical vapor deposition The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part t... | 08/12/2008 |
| 7404990 | Non-thermal process for forming porous low dielectric constant films Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperatu... | 07/29/2008 |
| 7399697 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enh... | 07/15/2008 |
| 7399388 | Sequential gas flow oxide deposition technique A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the si... | 07/15/2008 |
| 7384471 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5... | 06/10/2008 |
| 7384665 | Formation of protective coatings for color filters A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a secon... | 06/10/2008 |
| 7341761 | Methods for producing low-k CDO films Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules w... | 03/11/2008 |
| 7288284 | Post-cleaning chamber seasoning method A method for seasoning a process chamber is disclosed. The seasoning method includes providing a seasoning film on the interior surfaces of a process chamber, typically after cleaning of the chamber. ... | 10/30/2007 |
| 7282454 | Switched uniformity control A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the... | 10/16/2007 |
| 7277152 | Method for manufacturing active matrix type liquid crystal display device comprising annealing of the passivation film A TFT and a passivation film are formed on a transparent substrate and thereafter the passivation film is annealed. When measuring drain currents of a TFT at a fixed turn-on voltage (Von) and a fixed turn-off voltage (Voff), although performance of a TFT annealed (s... | 10/02/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7258895 | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first... | 08/21/2007 |
| 7220461 | Method and apparatus for forming silicon oxide film A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while expos... | 05/22/2007 |
| 7211295 | Silicon dioxide film forming method Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a proce... | 05/01/2007 |
| 7205240 | HDP-CVD multistep gapfill process A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average mol... | 04/17/2007 |
| 7205249 | CVD plasma assisted low dielectric constant films A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties ... | 04/17/2007 |
| 7205021 | Optical antenna array for harmonic generation, mixing and signal amplification An optical antenna collects, modifies and emits energy at light wavelengths. Linear conductors sized to correspond to the light wavelengths are used. Nonlinear junctions of small dimension are used to rectify an alternating waveform induced upon the conductors by th... | 04/17/2007 |
| 7175880 | Surface treatment system and method A surface treatment system in which gas for a deposition reaction is injected into a deposition chamber and power is applied to form a deposition reaction to form a deposition layer at a surface of an object or surface treatment, wherein the deposition chamber has a... | 02/13/2007 |
| 7153584 | Hybrid film, antireflection film comprising it, optical product, and method for restoring the defogging property of hybrid film Hybrid films, such as those having good abrasion-resistance and defogging properties, antireflection films including it, optical products, and methods for restoring the defogging property of the hybrid films are disclosed. The hybrid films having a defogging propert... | 12/26/2006 |
| 7119029 | Method of oxidizing a silicon substrate and method of forming an oxide layer using the same In a method of forming an oxide layer, ozone is generated by reacting an oxygen gas having a first flow rate with a nitrogen gas having a second flow rate of more than about 1% of the first flow rate. A reactant including the ozone and nitrogen is provided onto a si... | 10/10/2006 |
| 7101815 | Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 is provided, comprising placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced ch... | 09/05/2006 |
| 7081296 | Method for growing thin films A method of forming a layer over a substrate is provided. Generally, a layer of a first reactive species is deposited over the substrate. The layer of the first reactive species is reacted with a second reactive species to create a first product. Unreacted reactive ... | 07/25/2006 |
| 7074698 | Method of fabricating semiconductor device using plasma-enhanced CVD A method of fabricating a semiconductor device using a PECVD method is provided, which improves the adhesion strength of a deposited dielectric layer to an underlying layer and the reliability of the deposited dielectric layer. After placing a substrate in a chamber... | 07/11/2006 |
| 7071117 | Semiconductor devices and methods for depositing a dielectric film Embodiments provide methods and apparatuses for chemical vapor depositing a dielectric film, and various structures, devices, and systems, which incorporate dielectric elements formed from the dielectric film. The method includes heating a chamber, within which a su... | 07/04/2006 |
| 7060323 | Method of forming interlayer insulating film A material containing, as a main component, an organic silicon compound represented by the following general formula: R1xSi(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 | 06/13/2006 |
| 7056839 | Method of forming a silica insulation film with a reduced dielectric constant The invention provides an insulator having a main component of silicon dioxide, wherein the insulator includes at least one kind of organic polymer such as benzene nucleuses distributed therein in order to reduce a dielectric constant thereof as well as a method of ... | 06/06/2006 |
| 7056560 | Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD) A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bond... | 06/06/2006 |
| 7052552 | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap ... | 05/30/2006 |
| 7005427 | Cellulose acylate solution for film products A cellulose acylate solution is used for producing a film in a solution casting method. Particles to be added to the cellulose acylate solution are silicon dioxide and surfaces of the particles are positively charged. After the particles are added to the solution, t... | 02/28/2006 |
| 6987197 | Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film The organozirconium composite of the present invention has a decomposition temperature which is near the respective decomposition temperatures of an organolead compound and an organotitanium compound. The raw material solution can precisely control the composition o... | 01/17/2006 |
| 6974780 | Semiconductor processing methods of chemical vapor depositing SiO on a substrate The invention provides semiconductor processing methods of depositing SiO2 on a substrate. In a preferred aspect, the invention provides methods of reducing the formation of undesired reaction intermediates in a chemical vapor deposition (CVD) decompositi... | 12/13/2005 |
| 6957624 | Apparatus and a method for forming an alloy layer over a substrate One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamber in which... | 10/25/2005 |
| 6958112 | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The... | 10/25/2005 |
| 6958172 | Hybrid film, antireflection film comprising it, optical product, and method for restoring the defogging property of hybrid film Hybrid films, such as those having good abrasion-resistance and defogging properties, antireflection films including it, optical products, and methods for restoring the defogging property of the hybrid films are disclosed. The hybrid films having a defogging propert... | 10/25/2005 |
