Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
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| Number | Title | Issue Date |
| 8142847 | Precursor compositions and methods Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itsel... | 03/27/2012 |
| 7514120 | Precoat film forming method The precoat film forming method of a film forming device having a loading table for loading the object, includes a deposition step of feeding processing gas inside the film forming device and depositing a precoat TiN film on the surface of the loading table and a st... | 04/07/2009 |
| 7442415 | Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films A method of forming a layer of high-k dielectric material in an integrated circuit includes preparing a silicon substrate; forming a high-k dielectric layer by a sequence of ALD cycles including: depositing a first layer of metal ligand using ALD with an oxygen-cont... | 10/28/2008 |
| 7438948 | Method for coating a substrate with an undercoating and a functional coating A method for forming a coated substrate is disclosed. The method comprises depositing an undercoating layer and depositing a functional coating comprising a material which can be present in more than one crystal structure over the undercoating layer, wherein there i... | 10/21/2008 |
| 7419698 | Precursors for chemical vapor deposition Ti, Zr Hf and La precursors for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR... | 09/02/2008 |
| 7365028 | Methods of forming metal oxide and semimetal oxide The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one semimetal-and-halogen-containing material over a semiconductor substrate surfa... | 04/29/2008 |
| 7354624 | Multi-layer coatings and related methods Multi-layer coatings are disclosed that include (a) a first layer deposited from at least one composition that includes a polymeric composition, and (b) a second layer applied over at least a portion of the first layer in which the second layer is deposited from at ... | 04/08/2008 |
| 7354650 | Multi-layer coatings with an inorganic oxide network containing layer and methods for their application Multi-layer coatings are disclosed that include (1) a first layer comprising an inorganic oxide network, and (2) a second layer applied over at least a portion of the first layer, wherein the second layer is deposited from at least one liquid composition that is hyd... | 04/08/2008 |
| RE40082 | Coated inserts for rough milling Coated milling insert has a WC—Co cemented carbide with a low content of cubic carbides and a highly W-alloyed binder phase and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of κ-Al2O3 ... | 02/19/2008 |
| 7311942 | Method for binding halide-based contaminants during formation of a titanium-based film A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition pr... | 12/25/2007 |
| 7259085 | Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method ... | 08/21/2007 |
| 7223441 | Method for depositing gallium oxide coatings on flat glass A chemical vapor deposition process for laying down a gallium oxide coating on a glass substrate through the use of an organic ester and an inorganic gallium halide. The organic ester preferably contains 3-6 carbon atoms which contributes to obtaining a high deposit... | 05/29/2007 |
| 7208198 | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer The invention includes a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor d... | 04/24/2007 |
| 7208196 | Epitaxial oxide films via nitride conversion The present invention relates to oxides on suitable substrates, as converted from nitride precursors. ... | 04/24/2007 |
| 7201943 | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a secon... | 04/10/2007 |
| 7144771 | Methods of forming electronic devices including dielectric layers with different densities of titanium Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second e... | 12/05/2006 |
| 7135207 | Chemical vapor deposition method using alcohol for forming metal oxide thin film Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first rea... | 11/14/2006 |
| 7115304 | High throughput surface treatment on coiled flexible substrates One or more substrates may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The one or more coiled substrates are placed in a treatment chamber where substantially an entire surface of the one or more coiled s... | 10/03/2006 |
| 7105060 | Method of forming an oxidation-resistant TiSiN film A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow r... | 09/12/2006 |
| 7087266 | Thermal barrier coating and process therefor A thermal barrier coating, or TBC, and method for forming the TBC. The TBC is formed of a thermal-insulating material that contains yttria-stabilized zirconia (YSZ) alloyed with at least a third oxide. The TBC is formed to also contain elemental carbon, and may pote... | 08/08/2006 |
| 7060322 | Method of making heat treatable coated article with diamond-like carbon (DLC) coating A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate, preferably over at least one barrier layer. Then, a protective layer is formed o... | 06/13/2006 |
| 7048968 | Methods of depositing materials over substrates, and methods of forming layers over substrates The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercrit... | 05/23/2006 |
| 7041335 | Titanium tantalum nitride silicide layer Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposi... | 05/09/2006 |
| 7041341 | Process for the fabrication of oxide films The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li)... | 05/09/2006 |
| 7037560 | Film forming method, and film modifying method A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The ... | 05/02/2006 |
| 7011867 | α-alumina coated cutting tool A coated cutting tool is composed of one or more layers of refractory compounds of which at least one layer is single-phase α-alumina with a pronounced columnar grain-structure and strong texture in the [300]-direction. The alumina layer is preferably deposited by ... | 03/14/2006 |
| 6987197 | Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film The organozirconium composite of the present invention has a decomposition temperature which is near the respective decomposition temperatures of an organolead compound and an organotitanium compound. The raw material solution can precisely control the composition o... | 01/17/2006 |
| 6987063 | Method to reduce impurity elements during semiconductor film deposition A metal-containing semiconductor layer having a high dielectric constant is formed with a method that avoids inclusion of contaminant elements that reduce dielectric constant of metals. The metal-containing semiconductor layer is formed overlying a substrate in a ch... | 01/17/2006 |
| 6984417 | Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, ... | 01/10/2006 |
| 6982103 | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer The invention a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor deposition... | 01/03/2006 |
| 6969426 | Forming improved metal nitrides Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method ... | 11/29/2005 |
| 6964791 | High-temperature articles and method for making A coated article, a coating for protecting an article, and a method for protecting an article are provided. The article comprises a metallic substrate and a substantially single-phase coating disposed on the substrate, wherein the coating comprises nickel (Ni) and a... | 11/15/2005 |
| 6933021 | Method of TiSiN deposition using a chemical vapor deposition (CVD) process A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitrid... | 08/23/2005 |
| 6933004 | Control of stress in metal films by controlling the temperature during film deposition Materials such as titanium are vapor-deposited to form a film on a substrate while the substrate is thermally coupled to a temperature-controlling thermal source. Varying the temperature conditions of the substrate when the film is deposited varies the intrinsic str... | 08/23/2005 |
| 6919102 | Method of stabilizing material layer A method of stabilizing the properties of a material layer is disclosed. A plurality of wafers are stored in a FOUP and in sequence the wafers are transferred to a chamber to proceed with deposition of a material layer and to the FOUP filled with a specific gas afte... | 07/19/2005 |
| 6911391 | Integration of titanium and titanium nitride layers Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds, providing one or more cycles of a second set of... | 06/28/2005 |
| 6902764 | Oxide coated cutting tool According to the present invention there is provided a body at least partially coated with one or more refractory layers of which at least one layer essentially consist of α-Al2O3. Said α-Al2O3 layer consists of essentia... | 06/07/2005 |
| 6887523 | Method for metal oxide thin film deposition via MOCVD An MOCVD process is provided for forming metal-containing films having the general formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; ... | 05/03/2005 |
| 6884475 | Chemical vapor deposition method for depositing a high k dielectric film The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures... | 04/26/2005 |
| 6872419 | Method or process for producing PZT films at low substrate temperatures by chemical vapor deposition A method or process for producing PZT films by using a Ti material having a broad allowable temperature range for providing a predetermined film composition, easily thermally deposited from Ti(OiPr)2(dibm)2 at a low substrate temperature of 450... | 03/29/2005 |
