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| Number | Title | Issue Date |
| RE41799 | Coating composition for glass A composition for coating glass by chemical-vapor deposition comprises a mixture of a tin oxide precursor monobutyltin trichloride, a silicon dioxide precursor tetraethylorthosilicate, and an accelerant such as triethyl phosphite; the composition is gaseous below 20... | 10/05/2010 |
| 7413776 | Method of depositing a metal-containing film A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic com... | 08/19/2008 |
| 7390381 | Information recording medium and method of manufacturing the same An information recording medium that is excellent in repeated-rewriting performance and is deteriorated less in crystallization sensitivity with time is provided, with respect to which high density recording can be carried out. A method of manufacturing the same als... | 06/24/2008 |
| 7259085 | Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method ... | 08/21/2007 |
| 7175880 | Surface treatment system and method A surface treatment system in which gas for a deposition reaction is injected into a deposition chamber and power is applied to form a deposition reaction to form a deposition layer at a surface of an object or surface treatment, wherein the deposition chamber has a... | 02/13/2007 |
| 7160746 | GeBPSG top clad for a planar lightwave circuit A method of depositing a top clad layer for an optical waveguide of a planar lightwave circuit. A GeBPSG top clad layer for an optical waveguide structure of a planar lightwave circuit is fabricated such that the top clad layer comprises doped silica glass, wherein ... | 01/09/2007 |
| 7135207 | Chemical vapor deposition method using alcohol for forming metal oxide thin film Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first rea... | 11/14/2006 |
| 7060638 | Method of forming low dielectric constant porous films A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass... | 06/13/2006 |
| 7037560 | Film forming method, and film modifying method A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The ... | 05/02/2006 |
| 7037555 | Method of manufacturing a glazing panel A method of manufacturing a glazing panel having a solar factor (FS) of less than 70% and being composed of a vitreous substrate and a tin/antimony oxide coating layer provided on the vitreous substrate and having a Sb/Sn molar ratio ranging from 0.01 to 0.5, prefer... | 05/02/2006 |
| 6984417 | Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, ... | 01/10/2006 |
| 6887523 | Method for metal oxide thin film deposition via MOCVD An MOCVD process is provided for forming metal-containing films having the general formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; ... | 05/03/2005 |
| 6884475 | Chemical vapor deposition method for depositing a high k dielectric film The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures... | 04/26/2005 |
| 6872419 | Method or process for producing PZT films at low substrate temperatures by chemical vapor deposition A method or process for producing PZT films by using a Ti material having a broad allowable temperature range for providing a predetermined film composition, easily thermally deposited from Ti(OiPr)2(dibm)2 at a low substrate temperature of 450... | 03/29/2005 |
| 6866882 | Method of forming a thin film The vacuum degree in a reactor is set to as low as 0.1 Torr. In this state, a butyl acetate solution in which Pb(DPM)2 is dissolved at a concentration of 0.1 mol is transported from a Pb source generator to an evaporator, while the flow rate of the butyl ... | 03/15/2005 |
| 6815003 | Method for fabricating electrode for lithium secondary battery A method for fabricating an electrode for lithium secondary battery formed by depositing a thin film composed of active material capable of lithium storage and release, on a metallic foil to be used as a current collector, in which the surface of the metallic foil i... | 11/09/2004 |
| 6730354 | Forming ferroelectric Pb(Zr,Ti)O3 films Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer unifo... | 05/04/2004 |
| 6689203 | Liquid coating composition for production of fluorine doped tin oxide thin layers suitable for chemical vapor deposition process Composition containing a chlorinated organotin derivative and a polyfluoroalkenyl compound and/or a halo polyfluoroalkenyl compound useful for CVD formation of fluorine doped tin oxide coatings.... | 02/10/2004 |
| 6669990 | Atomic layer deposition method using a novel group IV metal precursor An atomic layer deposition method which comprises forming a metal oxide thin film by using, as a group IV metal precursor, a complex of a formula M(L)2 in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having... | 12/30/2003 |
| 6605319 | Use of integrated polygen deposition and RTP for microelectromechanical systems The method of the invention involves depositing a plurality of thin layers of film, each layer having a thickness ranging from about 500Å to about 2000Å. Low Pressure Chemical Vapor Deposition or other techniques known in the art maybe used to deposit e... | 08/12/2003 |
| 6602541 | Method of preparing vaporized antimony precursors A process for depositing an antimony-containing coating upon a surface of a heated glass substrate includes dissolving an antimony halide in an organic solvent to form an antimony halide containing solution. This solution is then vaporized to form a gaseo... | 08/05/2003 |
| 6585821 | Method of monitoring PGO spin-coating precursor solution synthesis using UV spectroscopy A method of monitoring the synthesis of a PGO spin-coating precursor solution includes monitoring heating of the solution with a UV spectrometer and terminating the heating step when a solution property reaches a predetermined value. The method utilizes t... | 07/01/2003 |
| 6551718 | Low friction coating Disclosed is a metal sulphide coating composition of the formula MX SiV RY SZ FW where M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr, and Hf; Si is silicon; R is one or more elements se... | 04/22/2003 |
| 6509066 | Sensitized photoconductive infrared detectors A series of processes have been discovered whereby uniform oxygen doping of lead chalcogenides have been achieved by using vapor deposition combined with in situ or ex situ ion implantation allowing the high yield manufacture of high S/N infrared detector... | 01/21/2003 |
| 6428850 | Single-substrate-processing CVD method of forming film containing metal element A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd)2 and Sr(thd)2, and a second process gas containing Ti(O-iPr)... | 08/06/2002 |
| 6416814 | Volatile organometallic complexes of lowered reactivity suitable for use in chemical vapor deposition of metal oxide films Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.... | 07/09/2002 |
| 6379873 | Method and apparatus for the construction of photosensitive waveguides There is disclosed a method of constructing photosensitive waveguides on silicon wafers through the utilization of a Plasma Enhanced Vapor Deposition (PECVD) system. The deposition is utilized to vary the refractive index of resulting structures when they... | 04/30/2002 |
| 6361825 | Micro-bolometer cell structure A pyroelectric detector system, the pyroelectric detector element therefor and the method of making the detector element which comprises an integrated circuit (1) and a pyroelectric detector element (7) coupled to the integrated circuit and thermally isol... | 03/26/2002 |
| 6333066 | Method for forming PZT thin film using seed layer A method for forming a PZT (lead zirconate titanate: Pb(Zrx Ti1-x)O3) thin film using a seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO seed layer or a PZT seed layer of a perovskit... | 12/25/2001 |
| 6145345 | Modified chemical vapor deposition using independently controlled thermal sources The deposition rate of MCVD processes is enhanced by applying at least a first and a second independently controlled heat source to a plurality of reactants which are used to form deposited particulate matter. The first heat source is adjusted so as to pr... | 11/14/2000 |
| 5989634 | Process of manufacturing solid oxygen ion conducting oxide layers Electrochemical vapor deposition (EVD) of oxygen ion conducting and mixed conducting, oxygen-ionic/electronic, oxide layers is achieved at near atmospheric pressure process conditions by employing metals and metal compounds for removal and/or recovery of ... | 11/23/1999 |
| 5919328 | Blood collection tube assembly The present invention is a plastic container coated with a multi-layer barrier coating. The multi-layer barrier coating is useful for providing an effective barrier against gas permeability in containers and for extending shelf-life of containers, especia... | 07/06/1999 |
| 5853799 | Liquid methyltin halide compositions Liquid methyltin halide compositions and their use as intermediates in chemical synthesis and as precursors for forming tin oxide coatings on substrates are disclosed.... | 12/29/1998 |
| 5830530 | Chemical vapor deposition of tin oxide films A method of depositing a tin oxide film onto a heated substrate is provided, by chemical vapor deposition using a tetraalkyoxy tin compound. Further provided is a method for doping the film with platinum or palladium using a ଲ-diketonate precursor t... | 11/03/1998 |
| 5744215 | Reduction of haze in transparent coatings Surface haze resulting from a rough surface of a substrate e.g. a fluorine doped tin oxide coated glass piece is reduced by coating the rough surface with a smooth surface coating of sufficient thickness to smooth out the rough surface e.g. coating the ti... | 04/28/1998 |
| 5714391 | Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device This invention relates to a manufacturing method of a compound semiconductor thin film derived from a metal sulfide produced by thermal decomposition of a sulfur-containing metal organic compound, the compound containing at least one functional group havi... | 02/03/1998 |
| 5674563 | Method for ferroelectric thin film production A ferroelectric thin film is produced on a substrate placed in an oxygen gas atmosphere within a reaction chamber. Evaporated source materials (organic metal compounds) are separately introduced in a predetermined sequence into the reaction chamber to pro... | 10/07/1997 |
| 5464657 | Method for coating a moving glass substrate A method for coating a moving substrate provides a coating having a chemical composition which varies continuously from the interface with the substrate to the opposite surface of the coating. The method involves directing a vapor coating composition towa... | 11/07/1995 |
| 5389401 | Chemical vapor deposition of metal oxides Films of metal oxides are deposited from vaporized precursor compounds, such as metal alkoxides, by reaction with the vapor of a compound, such as cyclohexenone, that is derived formally from a stable aromatic compound by replacing one hydrogen with a ket... | 02/14/1995 |
| 5372850 | Method of manufacturing an oxide-system dielectric thin film using CVD method In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 10... | 12/13/1994 |
