Bizarre Patents
A haircutting appliance comprises an enclosed housing having a hollow handle connecting the housing to a vacuum source to carry away cut hairs from a subject's head.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8163343 | Method of forming an aluminum oxide layer Methods of forming aluminum oxide layers on substrates are disclosed. In some embodiments, the method includes depositing an aluminum oxide seed layer on the substrate using a first process having a first deposition rate. The method further includes depositing a bul... | 04/24/2012 |
| 8097302 | Electroconductive tin oxide having high mobility and low electron concentration Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxi... | 01/17/2012 |
| 7858151 | Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIA may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB ... | 12/28/2010 |
| 7695764 | Alumina layer with enhanced texture A refined method to produce textured α-Al2O3 layers in a temperature range of from about 750 to about 1000° C. with a controlled texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The α-Al2... | 04/13/2010 |
| 7431966 | Atomic layer deposition method of depositing an oxide on a substrate The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the... | 10/07/2008 |
| 7326461 | Composite material A composite material has a base substrate body with first and second coatings. Each coating is formed by a multiphase layer of titanium oxide and at least two oxides from the group of aluminum, zirconium, and hafnium oxide and a second single-phase layer on the firs... | 02/05/2008 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7258895 | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first... | 08/21/2007 |
| 7256144 | Method for forming a metal oxide film A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The meth... | 08/14/2007 |
| 7220312 | Methods for treating semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 05/22/2007 |
| 7208770 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 04/24/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7195022 | Production apparatus for producing gallium nitride semiconductor film and cleaning apparatus for exhaust gas There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor... | 03/27/2007 |
| 7195795 | Material for forming insulation film and film-forming method with the use of the material A material for forming an insulation film comprising an alkoxide compound of lithium and at least one kind of organic solvent selected from ether, ketone, ester, alcohol, and hydrocarbon. A material for forming an insulation film comprising a carboxylate of lithium,... | 03/27/2007 |
| 7192892 | Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur... | 03/20/2007 |
| 7183186 | Atomic layer deposited ZrTiOfilms After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other embodiments, a zirconium-containing precursor includes but i... | 02/27/2007 |
| 7169673 | Atomic layer deposited nanolaminates of HfO/ZrOfilms as gate dielectrics A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is ... | 01/30/2007 |
| 7160578 | Method for depositing aluminum oxide coatings on flat glass A chemical vapor deposition process for laying down an aluminum oxide coating on a glass substrate through the use of an organic ester having a β hydrogen on the alkyl group bonded to the carboxylate oxygen and an inorganic aluminum halide. The resulting article ha... | 01/09/2007 |
| 7122846 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 10/17/2006 |
| 7122224 | Methods and apparatus for turbine engine component coating A method for processing a substrate article is provided. The method includes masking a first portion of the substrate article with a maskant that includes a formed graphite piece that overlays and contacts the first portion of the substrate such that a second portio... | 10/17/2006 |
| 7101813 | Atomic layer deposited Zr-Sn-Ti-O films A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and ox... | 09/05/2006 |
| 7087449 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substr... | 08/08/2006 |
| 7084078 | Atomic layer deposited lanthanide doped TiOx dielectric films A dielectric film containing atomic layer deposited lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The lantha... | 08/01/2006 |
| 7080915 | Mirror substrate, mirror body using the same, and optical device using mirror body The present invention adopts a particle dispersed silicon material, comprising silicon carbide as dispersion particles, as a mirror substrate, subjects the mirror substrate to mirror finish polishing to form a mirror body, forms a reflecting film on the mirror body ... | 07/25/2006 |
| 7071118 | Method and apparatus for fabricating a conformal thin film on a substrate A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser p... | 07/04/2006 |
| 7053432 | Enhanced surface area capacitor fabrication methods A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode ... | 05/30/2006 |
| 7052585 | Coated article including titanium oxycarbide and method of making same A coated article is provided which includes a layer including titanium oxycarbide. In order to form the coated article, a layer of titanium oxide is deposited on a substrate by sputtering or the like. After sputtering of the layer including titanium oxide, an ion be... | 05/30/2006 |
| 7048968 | Methods of depositing materials over substrates, and methods of forming layers over substrates The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercrit... | 05/23/2006 |
| 7045430 | Atomic layer-deposited LaAlO3 films for gate dielectrics A dielectric film containing LaAlO3 and method of fabricating a dielectric film contained LaAlO3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO2. The LaAlO3 gate di... | 05/16/2006 |
| 7037574 | Atomic layer deposition for fabricating thin films An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. T... | 05/02/2006 |
| 7015078 | Silicon on insulator substrate having improved thermal conductivity and method of its formation A silicon on insulator (SOI) substrate includes a layer of silicon carbide beneath an insulating layer on which semiconductor devices are formed. The silicon carbide layer has a high thermal conductivity and provides beneficial dissipation of thermal energy generate... | 03/21/2006 |
| 7011867 | α-alumina coated cutting tool A coated cutting tool is composed of one or more layers of refractory compounds of which at least one layer is single-phase α-alumina with a pronounced columnar grain-structure and strong texture in the [300]-direction. The alumina layer is preferably deposited by ... | 03/14/2006 |
| 7008669 | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat tre... | 03/07/2006 |
| 6964791 | High-temperature articles and method for making A coated article, a coating for protecting an article, and a method for protecting an article are provided. The article comprises a metallic substrate and a substantially single-phase coating disposed on the substrate, wherein the coating comprises nickel (Ni) and a... | 11/15/2005 |
| 6958302 | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable usin... | 10/25/2005 |
| 6955840 | Liquid crystal display device having thin glass substrate on which protective layer formed and method of making the same The LCD according to present invention includes a first substrate and a second substrate, two protective layers including at least one layer formed on outer surface of the first and second substrates, a transparent electrode formed on inner surface of the first subs... | 10/18/2005 |
| 6955965 | Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device Process for fabricating a charge trapping dielectric flash memory device including steps of providing a semiconductor substrate; forming on the semiconductor substrate a bottom oxide layer; depositing on the bottom oxide layer a nitride layer, the deposited nitride ... | 10/18/2005 |
| 6949481 | Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device Process for fabricating a semiconductor device including steps of providing a semiconductor substrate having formed thereon a semiconductor device; depositing over the semiconductor device a spacer layer, the spacer layer having a first hydrogen content; and applyin... | 09/27/2005 |
| 6921925 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 07/26/2005 |
