Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Number | Title | Issue Date |
| 7989024 | Method of making a low-resistivity, doped zinc oxide coated glass article and the coated glass article made thereby What is described and claimed is an atmospheric chemical vapor deposition method of making a low-resistivity, doped zinc oxide coated glass article, made by directing one or more streams of gaseous reactants, specifically a zinc containing compound, a fluorine conta... | 08/02/2011 |
| 7736698 | Method of depositing zinc oxide coatings on a substrate A process for the production of a zinc oxide coating on a moving glass substrate provides a precursor mixture of a dialkylzinc compound, an oxygen-containing compound and an inert carrier gas. The precursor mixture is directed along a surface of the glass substrate ... | 06/15/2010 |
| 7732013 | Method of forming a zinc oxide coated article The invention described and claimed herein relates to a chemical vapor deposition process for depositing a zinc oxide coating on a substrate by delivering two gaseous precursor streams to a surface of the substrate, and mixing the gaseous precursor streams at the su... | 06/08/2010 |
| 7670647 | Method for depositing zinc oxide coatings on flat glass A method of forming zinc oxide films on a heated, moving glass substrate utilizes a gaseous precursor mixture comprising an alkyl zinc compound chelated by at least one tridentate ligand, an oxygen-containing compound, and one or more inert carrier gases. ... | 03/02/2010 |
| 7335783 | Thin film-forming material and method for producing thin film The thin film-forming material of the present invention comprises a bis(β-diketonato)zinc compound that is liquid at 25° C. and is suitable for forming a zinc-containing thin film. By using the thin film-forming material, a thin film can be produced with stable fi... | 02/26/2008 |
| 7316967 | Flow method and reactor for manufacturing noncrystals A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method. ... | 01/08/2008 |
| 6994800 | Liquid precursors for formation of materials containing alkali metals Volatile liquid precursors are provided for use in the formation of alkali metal-containing materials. The compound includes an alkali metal and an amide ligand and is a liquid at a temperature of less than about 70° C. ... | 02/07/2006 |
| 6921552 | Fabrication of Zinc Oxide films on non-planar substrates and the use thereof A method of manufacture of a substantially continuous circumferential coating on a non-planar substrate, is disclosed the method comprising the steps of: utilising a substantially non directional deposition technique and a substantially static substrate deposition g... | 07/26/2005 |
| 6887523 | Method for metal oxide thin film deposition via MOCVD An MOCVD process is provided for forming metal-containing films having the general formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; ... | 05/03/2005 |
| 6852406 | Anti-static, anti-reflection coating An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably h... | 02/08/2005 |
| 6808743 | Growth of ZnO film using single source CVD The present invention relates to a method of growing a ZnO film using chemical vapour deposition (CVD), and to a ZnO film grown according to the method. The method includes providing a precursor in vapour form, the precursor substantially comprising Zn4O(... | 10/26/2004 |
| 6780465 | Method for making thin film and electronic apparatus The present invention provides a method for forming a thin film using a CVD process in which a large-scale vacuum exhaust unit or neutralization unit is not required, and a patterning step after the formation of the film is not required. A pattern formed of a monola... | 08/24/2004 |
| 6676994 | Method for producing thin films Thin films are produced by a method wherein a material is heated in a furnace placed inside a vacuum system. An inert gas is flown over/through the heated material. The vapors of the material are entrained in the carrier gas which is then directed onto a ... | 01/13/2004 |
| 6551718 | Low friction coating Disclosed is a metal sulphide coating composition of the formula MX SiV RY SZ FW where M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr, and Hf; Si is silicon; R is one or more elements se... | 04/22/2003 |
| 6482527 | Pyrochlore thin films and process for making A thin film comprising a pyrochlore represented by the formula: (Bi3x Zn2-3x)(Znx Nb2-x)O7 wherein x is from about 0.45 to about 0.73 and an article comprising a substrate and, coated on the substrate, a thin f... | 11/19/2002 |
| 6416814 | Volatile organometallic complexes of lowered reactivity suitable for use in chemical vapor deposition of metal oxide films Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.... | 07/09/2002 |
| 6194031 | Method for making high refractive index (HRI) film by adjusting the flow rate of a vaporized material This invention includes a method for heating a deposition material to form a vapor that may be deposited on a polymer film and thereby create a holographic film or similar material. Included within this method is a vaporizer that has an adjustable apertur... | 02/27/2001 |
| 6113807 | Phosphor and method for producing same A method for producing a phosphor made of luminous inorganic particles of a nanostructure which is capable of keeping a surface of the phosphor from being polluted by any by-product and controlling a particle diameter distribution of the phosphor as desir... | 09/05/2000 |
| 6113977 | Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components The invention relates to a method of growing a ZnS:Mn phosphor layer suitable for use in thin-film electroluminescent components. According to the method, the ZnS:Mn phosphor layer is grown on a substrate by means of the ALE method using volatile zinc, su... | 09/05/2000 |
| 6090434 | Method for fabricating electroluminescent device An electroluminescent device improved in brightness is disclosed. The electroluminescent device comprising sequentially stacked layers having an optically transparent material on at least the viewing side of the structure comprises a luminescent layer bas... | 07/18/2000 |
| 6083561 | Low scatter, high quality water clear zinc sulfide An improved chemical vapor deposition (CVD) process which is capable of providing low-scatter water-clear zinc sulfide bulk material is described. The improved method also minimizes bowing, or induced curvature, in the product bulk material. The product z... | 07/04/2000 |
| 6071561 | Chemical vapor deposition of fluorine-doped zinc oxide Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to vi... | 06/06/2000 |
| 5994642 | Method for preparing CdTe film and solar cell using the same A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coati... | 11/30/1999 |
| 5989634 | Process of manufacturing solid oxygen ion conducting oxide layers Electrochemical vapor deposition (EVD) of oxygen ion conducting and mixed conducting, oxygen-ionic/electronic, oxide layers is achieved at near atmospheric pressure process conditions by employing metals and metal compounds for removal and/or recovery of ... | 11/23/1999 |
| 5908698 | Encapsulated electroluminescent phosphor and method for making same Encapsulated electroluminescent phosphor particles and method for making same. The phosphor particles are encapsulated in a very thin oxide layer to protect them from aging due to moisture intrusion. The particles are encapsulated via a vapor phase hydrol... | 06/01/1999 |
| 5786097 | Assembly substrate and method of making An assembly substrate includes a substrate (11, 31, 41), a composite layer (12, 32, 42) overlying the substrate (11, 31, 41), and an electrically conductive layer (13, 33, 43) overlying the composite layer (12, 32, 42). The composite layer (12, 32, 42) in... | 07/28/1998 |
| 5776556 | Method for depositing thin layers of a material consisting of chemical compounds comprising a metal from group IV of the periodic system, nitrogen and oxygen onto heatable substrates The invention concerns process for producing thin layers of a material containing chemical compounds between a metal from group IV A of the periodic system, nitrogen and oxygen. The optical and electrical properties of this material can be set within wide... | 07/07/1998 |
| 5714391 | Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device This invention relates to a manufacturing method of a compound semiconductor thin film derived from a metal sulfide produced by thermal decomposition of a sulfur-containing metal organic compound, the compound containing at least one functional group havi... | 02/03/1998 |
| 5569486 | Electroluminescence element and process for fabricating same An electroluminescence element comprises the luminescent layer having a luminescence spectrum in which, in addition to the original emission peaks of the rare earth element, one or more emission peaks exist within a 10 nm wavelength range around each of s... | 10/29/1996 |
| 5545443 | Method for producing a transparent conductive ZnO film by incorporating a boron or aluminum containing material The formation of a transparent conductive ZnO film on a substrate in accordance with the chemical vapor deposition process is accomplished herein by a method characterized by feeding purified water and an organic metal material for Zn as separately entrai... | 08/13/1996 |
| 5496582 | Process for producing electroluminescent device A process for producing an electroluminescent device comprising a luminescent layer located between two electrodes formed on an insulating substrate wherein the luminescent layer is composed of a host material to which a luminescent center element is adde... | 03/05/1996 |
| 5487918 | Method of depositing metal oxides Metal oxide fine powders and thin films prepared by exchange reactions between organosemiconductor oxides (such as disiloxanes) and metal coordination compounds, metallic halides, or organometallic compounds in inert environments and anhydrous solvents.... | 01/30/1996 |
| 5383969 | Process and apparatus for supplying zinc vapor continuously to a chemical vapor deposition process from a continuous supply of solid zinc A process and apparatus for the manufacture of chemical vapor deposition deposited structures which comprises supplying a solid zinc metal continuously to a heated retort at a controlled rate. The retort is a body of refractory material having a top and a... | 01/24/1995 |
| 5316697 | Conductive, particulate, fluorine-doped zinc oxide An inventive process for forming a conductive, particulate, fluorine-doped, zinc oxide product which is doped throughout. The process comprises the step of reacting vapor phase reactants in a vapor phase oxidation system and at a temperature sufficient to... | 05/31/1994 |
| 5273774 | Method of making zinc sulfide electroluminescent phosphor particles A copper- and/or manganese-activated zinc sulfide electroluminescent phosphor is made by coating particles of a ferroelectric material with a very thin coating of the phosphor. The phosphor is made by reacting zinc- and copper- and/or manganese-containing... | 12/28/1993 |
| 5258204 | Chemical vapor deposition of metal oxide films from reaction product precursors Thin, uniform films of complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor, which is the reaction product of a metal M' beta-diketonate and a metal M" alkoxide, where metal M' is Li, Na,... | 11/02/1993 |
| 5242709 | Method for hardening zinc selenide and zinc sulfide A body resistant to abrasion and transmissive to light is provided which is formed essentially of zinc sulfide or zinc selenide having incorporated therein small amounts of tellurium. The body can form a layer over zinc sulfide, zinc selenide, or a conven... | 09/07/1993 |
| 5201995 | Alternating cyclic pressure modulation process for selective area deposition A novel process for the selective deposition of solid-phase materials is disclosed, which process requires only the modulation of a single auxiliary gas within a suitable reactor assembly. According to the disclosed method, selective area deposition can b... | 04/13/1993 |
| 5185181 | Process for preparing an electroluminescent thin film A process is provided for preparing uniform and homogeneous thin films such as ZnS:M film on the substrates having a large area by CVD under a reduced pressure, wherein as many plural substrates as possible can be subjected to the CVD treatment in the sam... | 02/09/1993 |
| 5096735 | Process for producing a thin film electroluminescent device Disclosed is an improvement of a process for producing a thin film electroluminescent device wherein the luminescent film is formed by a CVD method. The improvement residues in that an unnecessary portion of the luminescent layer, which is inherently form... | 03/17/1992 |