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Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 8163342 | Method of making low resisitivity doped zinc oxide coatings and the articles formed thereby A low-resistivity, doped zinc oxide coated glass article is formed by providing a hot glass substrate having a surface on which a coating is to be deposited, the surface being at a temperature of at least 400° C. A zinc containing compound, an oxygen-containing com... | 04/24/2012 |
| 8114480 | Method for self-limiting deposition of one or more monolayers The invention relates to a method for deposition of at least one layer containing at least one first component on at least one substrate in a process chamber, wherein first and second starting materials are introduced in gaseous form into the process chamber in alte... | 02/14/2012 |
| 7862857 | Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, ... | 01/04/2011 |
| 7713584 | Process for producing oxide films Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide t... | 05/11/2010 |
| 7709056 | Synthesis of transparent conducting oxide coatings A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimet... | 05/04/2010 |
| 7670646 | Methods for atomic-layer deposition Atomic-Layer deposition systems and methods provide a variety of electronic products. In an embodiment, a method uses an atomic-layer deposition system that includes an outer chamber, a substrate holder, and a gas-distribution fixture that engages or cooperates with... | 03/02/2010 |
| 7618681 | Process for producing bismuth-containing oxide films A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the ... | 11/17/2009 |
| 7569251 | Method of forming a thermal protective coating on a super alloy metal substrate A method of forming a gas turbine part includes forming a bonding underlayer on a superalloy metal substrate, the underlayer including an intermetallic compound of aluminum, nickel, and platinum, and forming a ceramic outer layer on the alumina film formed on the bo... | 08/04/2009 |
| 7488514 | Methods of forming barium strontium titanate layers A chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Ti... | 02/10/2009 |
| 7431966 | Atomic layer deposition method of depositing an oxide on a substrate The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the... | 10/07/2008 |
| 7429404 | Methods of selectively incorporating metals onto substrates A method for forming multi-metallic sites on a substrate is disclosed and described. A substrate including active groups such as hydroxyl can be reacted with a pretarget metal complex. The target metal attached to the active group can then be reacted with a secondar... | 09/30/2008 |
| 7422771 | Methods for applying a hybrid thermal barrier coating A method for applying a hybrid thermal barrier coating, comprising masking at least a portion of a first surface of a component with a first maskant; applying a first coating material to at least a portion of a second surface of said component; removing said first m... | 09/09/2008 |
| 7396565 | Multiple precursor cyclical deposition system Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a t... | 07/08/2008 |
| 7364624 | Wafer handling apparatus and method of manufacturing thereof A wafer processing device or apparatus, i.e., a heater or an electrostatic chuck, comprises a planar support platen, a support shaft having centrally located bore, and a pair of electrical conductors located in the shaft. In one embodiment, the electrical conductors... | 04/29/2008 |
| 7332357 | Method for fabricating semiconductor device A conduction film 36 is formed in a larger design thickness value on a ferroelectric film 32 by MOCVD, and the entire surface of the conduction film 36 is anisotropically etched back, whereby the surface morphology of the conduction film 36 | 02/19/2008 |
| 7332038 | Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a g... | 02/19/2008 |
| 7303815 | Functional bimorph composite nanotapes and methods of fabrication A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons... | 12/04/2007 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7288217 | Electroconductive compound in flake form and electroconductive composition An electroconductive compound in a flake form, characterized in that it comprises a titanium oxide which has an average long diameter of 1 to 100 μm and an average thickness of 0.01 to 1.5 μm, and contains potassium in an amount of 0.3 to 5 wt % in terms of potass... | 10/30/2007 |
| 7285312 | Atomic layer deposition for turbine components A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substr... | 10/23/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7258895 | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first... | 08/21/2007 |
| 7241478 | Process for coating three-dimensional substrates with thin organic films and products The present invention relates to an apparatus and process for producing a thin organic film on a substrate using an ultrasonic nozzle to produce a cloud of micro-droplets in a vacuum chamber. The micro-droplets move turbulently within the vacuum chamber, isotropical... | 07/10/2007 |
| 7241479 | Thermal CVD synthesis of nanostructures The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes loca... | 07/10/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7208195 | Methods and apparatus for deposition of thin films A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the s... | 04/24/2007 |
| 7208198 | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer The invention includes a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor d... | 04/24/2007 |
| 7204885 | Deposition system to provide preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 04/17/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7196211 | Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom w... | 03/27/2007 |
| 7192486 | Clog-resistant gas delivery system Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing... | 03/20/2007 |
| 7189432 | Varying conductance out of a process region to control gas flux in an ALD reactor A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. In one embodiment, instead of varying the gas flux on a substrate in the chamber by controlling the flow of gas upstream of the process chamber, the gas fl... | 03/13/2007 |
| 7157111 | MOCVD selective deposition of C-axis oriented PBGEOthin films on InOoxides A method of selectively depositing a ferroelectric thin film on an indium-containing substrate in a ferroelectric device includes preparing a silicon substrate; depositing an indium-containing thin film on the substrate; patterning the indium containing thin film; a... | 01/02/2007 |
| 7148530 | Ferroelectric capacitor and method for manufacturing the same A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequenti... | 12/12/2006 |
| 7108747 | Method for growing oxide thin films containing barium and strontium The present invention relates to a method for growing oxide thin films which contain barium and/or strontium. According to the method, such thin films are made by the ALE technique by using as precursors for barium and strontium their cyclopentadienyl compounds. A t... | 09/19/2006 |
| 7105441 | Preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 09/12/2006 |
| 7105059 | Reaction apparatus for atomic layer deposition A reaction apparatus for atomic layer deposition includes a vacuum chamber having a gas inlet, a gas outlet, and a gas flow path for connecting the gas inlet and the gas outlet; a reactor located in the vacuum chamber, including a reaction chamber where a first gas,... | 09/12/2006 |
| 7101795 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor depo... | 09/05/2006 |
| 7094284 | Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant (κ) thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(β-diketonate)2(OR)2, wh... | 08/22/2006 |
