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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 8133533 | Method for producing functional film The method for producing a functional film includes a step of forming an organic film on a surface of a substrate and a step of forming an inorganic film by vacuum deposition on a surface of the organic film to produce the functional film. Prior to forming the inorg... | 03/13/2012 |
| 8097301 | Electrical insulation film manufacturing method A method of manufacturing an electrical insulation film includes (i) forming an R film containing at least one rare earth element R selected from the group including Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu on at least a portion of a surface of a metal substrate where ... | 01/17/2012 |
| 8080283 | Method for forming a yttria-stabilized zirconia coating with a molten silicate resistant outer layer A method for providing a component with protection against sand related distress includes the steps of: providing a substrate; depositing a layer of a yttria-stabilized zirconia material on the substrate; and forming a molten silicate resistant outer layer over the ... | 12/20/2011 |
| 7955651 | Enhanced alumina layer with texture A refined method to produce textured α-Al2O3 layers in a temperature range of 750-1000° C. with a controlled texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The α-Al2O3 ... | 06/07/2011 |
| 7927661 | Methods of depositing a metal oxide layer or film using a rare earth metal precursor Methods of depositing a single or mixed metal oxide layer or film are described herein. The methods use a rare earth metal precursor are described herein. The rare earth metal precursors have a general formula M[OCR1(R2)(CH2)X]3... | 04/19/2011 |
| 7927662 | CVD method in vertical CVD apparatus using different reactive gases A method of performing a CVD process on target substrates all together in a vertical CVD apparatus includes repeating, a plurality of times, first and second steps of supplying first and second reactive gases, respectively. The first reactive gas has a vapor pressur... | 04/19/2011 |
| 7604841 | Method for extending time between chamber cleaning processes A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processi... | 10/20/2009 |
| 7537804 | ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M2-M1-R- and M1-(R-M2-)x: where x is at least 2; where M1 is a ... | 05/26/2009 |
| 7531213 | Method for making coated cutting tool insert A method for making a coated cutting tool insert by depositing by CVD, onto a cemented carbide, titanium based or ceramic substrate a hard layer system, having a total thickness of from about 2 to about 50 μm, comprising at least one layer selected from titanium ca... | 05/12/2009 |
| 7531212 | Process for producing an alumina coating comprised mainly of α crystal structure The present invention provides a process for producing an alumina coating comprised mainly of α crystal structure on a base material. ... | 05/12/2009 |
| 7531214 | Method for manufacturing an oxide coated cutting tool A method of depositing a crystalline α-Al2O3 layer onto a cutting tool insert by Chemical Vapor Deposition at a temperature of from about 625 to about 800° C. includes the following steps: depositing a from about 0.1 to about 1.5 μm layer of... | 05/12/2009 |
| 7514119 | Method and apparatus for using solution based precursors for atomic layer deposition A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutio... | 04/07/2009 |
| 7482037 | Methods for forming niobium and/or vanadium containing layers using atomic layer deposition A method of forming a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium ... | 01/27/2009 |
| 7438949 | Ruthenium containing layer deposition method An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devi... | 10/21/2008 |
| 7431966 | Atomic layer deposition method of depositing an oxide on a substrate The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the... | 10/07/2008 |
| 7429404 | Methods of selectively incorporating metals onto substrates A method for forming multi-metallic sites on a substrate is disclosed and described. A substrate including active groups such as hydroxyl can be reacted with a pretarget metal complex. The target metal attached to the active group can then be reacted with a secondar... | 09/30/2008 |
| 7429406 | Method of forming thin ruthenium-containing layer A method of forming a thin ruthenium-containing layer includes performing a CVD process using butyl ruthenoscene as a ruthenium source material. The thin ruthenium-containing layer may be formed by a one-step or two-step CVD process. The one-step CVD process is perf... | 09/30/2008 |
| 7422805 | Cutting tool for bimetal machining Coated cemented carbide cutting tool inserts for bimetal machining under wet conditions at moderate cutting speeds, and in particular, cutting tool inserts for face milling of engine blocks formed from alloys of cast iron and aluminium and/or magnesium. The inserts ... | 09/09/2008 |
| 7407686 | Optical film, polarizing plate and display device utilising the film, and production method of optical film An optical film is disclosed having minimal curl, minimal coating unevenness and no cracks. The optical film is obtained by casting a dope comprising a cellulose ester and a non-chlorinated solvent on a metal support, the cellulose ester having a total acyl substitu... | 08/05/2008 |
| 7390381 | Information recording medium and method of manufacturing the same An information recording medium that is excellent in repeated-rewriting performance and is deteriorated less in crystallization sensitivity with time is provided, with respect to which high density recording can be carried out. A method of manufacturing the same als... | 06/24/2008 |
| 7351658 | Process for producing yttrium oxide thin films This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction sp... | 04/01/2008 |
| 7338582 | Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of se... | 03/04/2008 |
| 7332442 | Systems and methods for forming metal oxide layers A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor... | 02/19/2008 |
| 7309514 | Electron beam modification of CVD deposited films, forming low dielectric constant materials A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatu... | 12/18/2007 |
| 7294583 | Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more eff... | 11/13/2007 |
| 7285312 | Atomic layer deposition for turbine components A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substr... | 10/23/2007 |
| 7285308 | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium uppe... | 10/23/2007 |
| 7271038 | Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film is ... | 09/18/2007 |
| 7270849 | Organic siloxane copolymer film, method and deposition apparatus for producing same, and semiconductor device using such copolymer film An insulated organic copolymer is provided, having the excellent mechanical strength and deposition property at an interface contacting the lower base or the upper layer of the inorganic insulation film, and the effective dielectric constant is low as the whole film... | 09/18/2007 |
| 7258895 | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first... | 08/21/2007 |
| 7241479 | Thermal CVD synthesis of nanostructures The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes loca... | 07/10/2007 |
| 7223675 | Method of forming pre-metal dielectric layer A method of forming a pre-metal dielectric (PMD) layer is disclosed. In the method, after a nitride liner layer is formed on a substrate having a transistor, a USG layer is deposited thereon and then planarized. Next, ion implantation and annealing are performed for... | 05/29/2007 |
| 7221018 | NROM flash memory with a high-permittivity gate dielectric A high permittivity gate dielectric is used in an NROM memory cell. The gate dielectric has a dielectric constant greater than silicon dioxide and is comprised of an atomic layer deposited and/or evaporated nanolaminate structure. The NROM memory cell has a substrat... | 05/22/2007 |
| 7220451 | Process for producing metal thin films by ALD Electrically conductive noble metal thin films can be deposited on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed ... | 05/22/2007 |
| 7211216 | Aluminum nitride ceramic, semiconductor manufacturing member, and manufacturing method for aluminum nitride ceramic An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminu... | 05/01/2007 |
| 7211296 | Chalcogenide glass nanostructures Chalcogenide nanowires and other micro-and nano scale structures are grown on a preselected portion of on a substrate. They are amorphous and of uniform composition and can be grown by a sublimation-condensation process onto the surface of an amorphous substrate. Am... | 05/01/2007 |
| 7208195 | Methods and apparatus for deposition of thin films A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the s... | 04/24/2007 |
| 7205247 | Atomic layer deposition of hafnium-based high-k dielectric A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafniu... | 04/17/2007 |
| 7203001 | Optical retarders and related devices and systems In certain aspects, the disclosure relates to articles that include a plurality of walls configured to form a grating. Each of the plurality of walls can include a layer of a first material and a layer of a second material different from the first material. The arti... | 04/10/2007 |
| 7192625 | Manufacturing method of barrier-forming film In manufacturing a barrier-forming film, a vapor-deposited inorganic oxide film is provided on a face of a substrate film. An annealing treatment is applied to the substrate film having said vapor-deposited inorganic film. The substrate film is a resinous film which... | 03/20/2007 |
