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| Number | Title | Issue Date |
| 8142846 | Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and s... | 03/27/2012 |
| 8101237 | Tellurium precursors for film deposition Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is mainta... | 01/24/2012 |
| 8101236 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding A method of fabricating a low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided. The method includes the deposition of the dielectric material from a first precursor whic... | 01/24/2012 |
| 8071167 | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a su... | 12/06/2011 |
| 7955650 | Method for forming dielectric film using porogen gas A method for reducing a dielectric constant of a cured film, includes: introducing a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is place; increa... | 06/07/2011 |
| 7947330 | Production method of film, and film A production method of a film of the present invention is a production method of a film, in which after a polymer base is wound off, metal is evaporated, and an oxygen gas is introduced and the inorganic compound layer is formed in an excitation atmosphere of an org... | 05/24/2011 |
| 7943195 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5... | 05/17/2011 |
| 7883746 | Insulating film formation method which exhibits improved thickness uniformity and improved composition uniformity In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried o... | 02/08/2011 |
| 7842342 | Method for manufacturing protective layer A method for manufacturing a protective layer such that when the protective layer is formed in a film-forming chamber, the partial pressure of water in the film-forming chamber is controlled by the exhaust velocity of the water in the film-forming chamber. During fo... | 11/30/2010 |
| 7811634 | Controlled sulfur species deposition process The present invention is a method for the deposition of a thin film of a pre-determined composition onto a substrate, the thin film comprising ternary, quaternary or higher sulfide compounds selected from the group consisting of thioaluminates, thiogallates and thio... | 10/12/2010 |
| 7776396 | Controlled vapor deposition of multilayered coatings adhered by an oxide layer An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate ... | 08/17/2010 |
| 7678422 | Cyclic chemical vapor deposition of metal-silicon containing films A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate... | 03/16/2010 |
| 7476420 | Process for producing metal oxide films at low temperatures A process for producing metal oxide thin films on a substrate by the ALD method comprises the steps of bonding no more than about a molecular monolayer of a gaseous metal compound to a growth substrate, and converting the bonded metal compound to metal oxide. The bo... | 01/13/2009 |
| 7422805 | Cutting tool for bimetal machining Coated cemented carbide cutting tool inserts for bimetal machining under wet conditions at moderate cutting speeds, and in particular, cutting tool inserts for face milling of engine blocks formed from alloys of cast iron and aluminium and/or magnesium. The inserts ... | 09/09/2008 |
| 7387816 | Scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s), and method of making article using combustion CVD A method of making a scratch resistant coated article is provided, the coated article also being resistant to attacks by at least some fluoride-based etchant(s) for at least a period of time. In certain example embodiments, the method includes using flame pyrolysis ... | 06/17/2008 |
| 7384665 | Formation of protective coatings for color filters A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a secon... | 06/10/2008 |
| 7371695 | Use of TEOS oxides in integrated circuit fabrication processes A method for manufacturing a low temperature removable silicon dioxide hard mask for patterning and etching is provided, wherein tetra-ethyl-ortho-silane (TEOS) is used to deposit a silicon dioxide hard mask. ... | 05/13/2008 |
| 7352045 | Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protec... | 04/01/2008 |
| 7348042 | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conduct... | 03/25/2008 |
| 7335288 | Methods for depositing copper on a noble metal layer of a work piece Methods for electrodeposition of copper on a noble metal layer of a work piece are provided. An exemplary method includes exposing the noble metal layer to an electrodeposition composition. The electrodeposition composition comprises a copper salt, a suppressor, an ... | 02/26/2008 |
| 7319046 | Integrated optoelectronic silicon biosensor for the detection of biomolecules labeled with chromophore groups or nanoparticles An integrated optoelectronic silicon biosensor that can detect biomolecules by the change of the optical coupling between the integrated light source and the integrated detector that is caused by the binding of the appropriately labeled analytes onto the recognition... | 01/15/2008 |
| 7288292 | Ultra low k (ULK) SiCOH film and method The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constan... | 10/30/2007 |
| 7259050 | Semiconductor device and method of making the same A semiconductor device comprises a substrate, a gate disposed on the substrate, and a source and drain formed in the substrate on both sides of the gate. The device further comprises a thin spacer having a first layer and a second layer formed on the sidewalls of th... | 08/21/2007 |
| 7258895 | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first... | 08/21/2007 |
| 7220451 | Process for producing metal thin films by ALD Electrically conductive noble metal thin films can be deposited on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed ... | 05/22/2007 |
| 7214979 | Selectively deposited silicon oxide layers on a silicon substrate A process for selectively depositing a silicon oxide layer onto silicon substrates of different conductivity types is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relatively high pressures. Use of... | 05/08/2007 |
| 7211296 | Chalcogenide glass nanostructures Chalcogenide nanowires and other micro-and nano scale structures are grown on a preselected portion of on a substrate. They are amorphous and of uniform composition and can be grown by a sublimation-condensation process onto the surface of an amorphous substrate. Am... | 05/01/2007 |
| 7211295 | Silicon dioxide film forming method Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a proce... | 05/01/2007 |
| 7208195 | Methods and apparatus for deposition of thin films A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the s... | 04/24/2007 |
| 7208196 | Epitaxial oxide films via nitride conversion The present invention relates to oxides on suitable substrates, as converted from nitride precursors. ... | 04/24/2007 |
| 7200460 | Method of depositing low dielectric constant silicon carbide layers A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-dep... | 04/03/2007 |
| 7192625 | Manufacturing method of barrier-forming film In manufacturing a barrier-forming film, a vapor-deposited inorganic oxide film is provided on a face of a substrate film. An annealing treatment is applied to the substrate film having said vapor-deposited inorganic film. The substrate film is a resinous film which... | 03/20/2007 |
| 7192893 | Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off A process for enhanced selective deposition of a silicon oxide onto a substrate by pulsing delivery of the reactants through a linear injector is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relat... | 03/20/2007 |
| 7189659 | Method for fabricating a semiconductor device A method for fabricating a semiconductor device comprises the step of depositing an insulation film 32a with a first pressure set in a deposition chamber; the step of gradually decreasing the pressure in the deposition chamber to a second pressure whic... | 03/13/2007 |
| 7189431 | Method for forming a passivated metal layer A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate t... | 03/13/2007 |
| 7179755 | Forming a porous dielectric layer and structures formed thereby Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a dielectric layer utilizing a plasma, wherein the plasma comprises a porogen and substantially no oxidizing agent, and then applying energy to the dielectric ... | 02/20/2007 |
| 7163719 | Method of depositing thin film using hafnium compound A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing ... | 01/16/2007 |
| 7148153 | Process for oxide fabrication using oxidation steps below and above a threshold temperature A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrat... | 12/12/2006 |
| 7141278 | Thin film forming method A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged seque... | 11/28/2006 |
| 7122222 | Precursors for depositing silicon containing films and processes thereof Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n | 10/17/2006 |
