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| Number | Title | Issue Date |
| 7732012 | Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method Provided is a method for the preparation of polycrystalline silicon in which, in conducting preparation of polycrystalline silicon by the Siemens method or by the monosilane method, no outer heating means is necessitated for the core member (seed rod), onto which po... | 06/08/2010 |
| 7306852 | Gas barrier film It is an object of the present invention to provide a gas barrier film improved in gas barrier characteristics by decreasing the adsorbent of the surface of a gas barrier layer to water and the like. The present invention attains the above object by providing a gas ... | 12/11/2007 |
| 7300702 | Diffusion barrier coating for Si-based components A component comprising a silicon-based substrate and a diffusion barrier coating disposed on the silicon-based substrate. The diffusion barrier coating comprises an isolation layer disposed directly on the silicon-based substrate and at least one oxygen barrier laye... | 11/27/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7270849 | Organic siloxane copolymer film, method and deposition apparatus for producing same, and semiconductor device using such copolymer film An insulated organic copolymer is provided, having the excellent mechanical strength and deposition property at an interface contacting the lower base or the upper layer of the inorganic insulation film, and the effective dielectric constant is low as the whole film... | 09/18/2007 |
| 7268090 | Method of manufacturing flash memory device A method of manufacturing flash memory devices, comprises the steps of forming an oxide film on a semiconductor substrate, performing a pre-annealing process under N2 gas atmosphere, nitrifying the oxide film by performing a main annealing process under N... | 09/11/2007 |
| 7262116 | Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate... | 08/28/2007 |
| 7253108 | Process for forming a thin film of TiSiN, in particular for phase change memory devices The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); e... | 08/07/2007 |
| 7253085 | Deposition methods The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material p... | 08/07/2007 |
| 7211524 | Method of forming insulating layer in semiconductor device The present invention relates to a method of forming an insulating film in a semiconductor device. After a mixed gas of alkyl silane gas and N2O gas is supplied into the deposition equipment, a radio frequency power including a short pulse wave for causin... | 05/01/2007 |
| 7201937 | Methods for forming composite coatings on MEMS devices The present invention provides unique methods of coating and novel coatings for MEMS devices. In general a two step process includes the coating of a first silane onto a substrate surface followed by a second treatment with or without a second silane and elevated te... | 04/10/2007 |
| 7166516 | Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN or SiCN The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 | 01/23/2007 |
| 7166528 | Methods of selective deposition of heavily doped epitaxial SiGe The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900... | 01/23/2007 |
| 7153787 | CVD plasma assisted lower dielectric constant SICOH film A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilic... | 12/26/2006 |
| 7132134 | Staggered in-situ deposition and etching of a dielectric layer for HDP CVD A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric l... | 11/07/2006 |
| 7125582 | Low-temperature silicon nitride deposition A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to c... | 10/24/2006 |
| 7125815 | Methods of forming a phosphorous doped silicon dioxide comprising layer This invention includes methods of forming phosphorus doped silicon dioxide comprising layers, and methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of forming a phosphorus doped silicon dioxide comprisin... | 10/24/2006 |
| 7118779 | Reactor surface passivation through chemical deactivation Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on t... | 10/10/2006 |
| 7115319 | Braze-based protective coating for silicon nitride A component comprising a silicon-based substrate and a braze-based protective coating disposed on the silicon-based substrate. The braze-based coating comprises a brazed layer, wherein the brazed layer comprises at least one intermetallic compound. A scale layer may... | 10/03/2006 |
| 7115528 | Systems and method for forming silicon oxide layers A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor... | 10/03/2006 |
| 7067176 | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment Silicon carbide structures are fabricated by fabricating a nitrided oxide layer on a layer of silicon carbide and annealing the nitrided oxide layer in an environment containing hydrogen. Such a fabrication of the nitrided oxide layer may be provided by forming the ... | 06/27/2006 |
| 7041335 | Titanium tantalum nitride silicide layer Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposi... | 05/09/2006 |
| 7015061 | Low temperature curable materials for optical applications The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition com... | 03/21/2006 |
| 7015153 | Method for forming a layer using a purging gas in a semiconductor process A method for forming at least a portion of a semiconductor device includes providing a semiconductor substrate, flowing a first precursor gas over the substrate to form a first metal-containing layer overlying the semiconductor substrate, and after completing said s... | 03/21/2006 |
| 6998014 | Apparatus and method for plasma assisted deposition Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a powe... | 02/14/2006 |
| 6998153 | Suppression of NiSiformation in a nickel salicide process using a pre-silicide nitrogen plasma A method that includes placing a wafer within a process chamber, generating a nitrogen plasma that is remote from the process chamber, nitriding a surface of the wafer with the nitrogen plasma, depositing a nickel film over the nitrided silicon substrate surface, an... | 02/14/2006 |
| 6992019 | Methods for forming silicon dioxide layers on substrates using atomic layer deposition Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silico... | 01/31/2006 |
| 6958174 | Solid material comprising a thin metal film on its surface and methods for producing the same The present invention provides a solid material comprising a solid substrate having a thin metal film and methods for producing the same. The method generally involves using a plurality self-limiting reactions to control the thickness of the metal film. ... | 10/25/2005 |
| 6943126 | Deuterium incorporated nitride A method of forming a semiconductor structure comprises forming an etch-stop layer comprising nitride, on a stack. The stack is on a semiconductor substrate, and the stack comprises (i) a gate layer. The forming is by CVD with a gas comprising a first compound which... | 09/13/2005 |
| 6936538 | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten l... | 08/30/2005 |
| 6933021 | Method of TiSiN deposition using a chemical vapor deposition (CVD) process A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitrid... | 08/23/2005 |
| 6926932 | Method for forming silicon oxide layer A method for forming a silicon oxide layer in the production of the polysilicon film transistor is disclosed. A plasma surface treatment is performed over a substrate after an amorphous silicon layer has been formed on the substrate by PECVD to transform a portion o... | 08/09/2005 |
| 6911391 | Integration of titanium and titanium nitride layers Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds, providing one or more cycles of a second set of... | 06/28/2005 |
| 6908827 | Perovskite-type material forming methods, capacitor dielectric forming methods, and capacitor constructions A method includes forming a material over a substrate, oxidizing the material, and separately from the oxidizing, converting at least a portion of the oxidized material to a perovskite-type crystalline structure. The material can include an alloy material containing... | 06/21/2005 |
| 6896968 | Coatings and method for protecting carbon-containing components from oxidation A protective coating for a carbon-containing component comprises a material selected from the group consisting of non-stoichiometric silicon and carbon; non-stoichiometric silicon and oxygen; non-stoichiometric silicon and nitrogen; compounds of silicon, oxygen, and... | 05/24/2005 |
| 6890816 | Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices High quality epitaxial layers of monocrystalline perovskite materials (18) can be grown overlying monocrystalline substrates (12) such as gallium arsenide wafers by forming a metal template layer (16) on the monocrystalline substrate. The struct... | 05/10/2005 |
| 6864125 | Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance gr... | 03/08/2005 |
| 6861104 | Method of enhancing adhesion strength of BSG film to silicon nitride film A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided. The silicon nitride film is then exposed to oxygen-containing plasma ... | 03/01/2005 |
| 6821566 | Method and apparatus for forming insulating film containing silicon oxy-nitride A method of forming an insulating film containing silicon oxy-nitride includes a loading step, temperature raising step, oxidation step, cycle purge step, and annealing step, in this order. The temperature raising step is performed while supplying nitrogen gas and o... | 11/23/2004 |
| 6749893 | Method of preventing cracking in optical quality silica layers A method for making an integrated photonic device involves depositing buffer, core and cladding layers on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment... | 06/15/2004 |
