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| Number | Title | Issue Date |
| 7442412 | Hydrophobic coating for oxide surfaces The disclosure relates to hydrophobic coatings for oxidized surfaces and methods of producing the same. Such coatings may be produced by applying a compound of the general formula AXn or A(R1)mXn to an oxidized surface fol... | 10/28/2008 |
| 7425350 | Apparatus, precursors and deposition methods for silicon-containing materials A method for making a Si-containing material comprises transporting a pyrolyzed Si-precursor to a substrate and polymerizing the pyrolyzed Si-precursor on the substrate to form a Si-containing film. Polymerization of the pyrolyzed Si-precursor may be carried out in ... | 09/16/2008 |
| 7396783 | Fibrous structure and absorbent article comprising said fibrous structure A fibrous structure testable in a series of run-off tests, wherein each run-off test includes exposing the fibrous structure to a volume of a test solution and the fibrous structure initially is hydrophobic and has been treated to be hydrophilic, wherein the fibrous... | 07/08/2008 |
| 7384665 | Formation of protective coatings for color filters A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a secon... | 06/10/2008 |
| 7358197 | Method for avoiding polysilicon film over etch abnormal The method for avoiding polysilicon film over etch abnormal includes cleaning a semiconductor substrate. A dielectric layer is formed on the substrate. Subsequently, a first silicon source gas at a first flow rate is next performed injecting into a reaction chamber ... | 04/15/2008 |
| 7329716 | Siloxane oligomers by phase transfer catalysis A process for forming a siloxane oligomer from a mixture comprising at least one alkoxysilane, at least one phase transfer catalyst having a specified structure, and water is described. ... | 02/12/2008 |
| 7299657 | Method of making high strain point glass A method of forming a glass sheet includes obtaining a preform generated from a glass composition and conveying the preform through a channel having a temperature that decreases along a length of the channel to form a glass sheet having a predetermined width and thi... | 11/27/2007 |
| 7294583 | Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more eff... | 11/13/2007 |
| 7265427 | Semiconductor apparatus and method of manufacturing the semiconductor apparatus A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electr... | 09/04/2007 |
| 7265064 | Semiconductor device with porous interlayer insulating film In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including... | 09/04/2007 |
| 7252860 | Process for producing a high temperature stable fiber reinforced ceramic A process is disclosed for producing a high temperature stable fiber composite ceramic by chemical vapor infiltration (CVI) with a silicon carbide precursor in a suitable carrier gas on carbon fiber preforms or silicon carbide fiber preforms. This process is charact... | 08/07/2007 |
| 7208427 | Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦bâ‰... | 04/24/2007 |
| 7201937 | Methods for forming composite coatings on MEMS devices The present invention provides unique methods of coating and novel coatings for MEMS devices. In general a two step process includes the coating of a first silane onto a substrate surface followed by a second treatment with or without a second silane and elevated te... | 04/10/2007 |
| 7192888 | Low selectivity deposition methods A deposition method includes forming a nucleation layer over a substrate, forming a layer of a first substance at least one monolayer thick chemisorbed on the nucleation layer, and forming a layer of a second substance at least one monolayer thick chemisorbed on the... | 03/20/2007 |
| 7189431 | Method for forming a passivated metal layer A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate t... | 03/13/2007 |
| 7182122 | Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus A heating and cooling apparatus with which batch processing is possible and throughput can be increased, and furthermore which is more compact and uses less energy. A substrate heating chamber and a substrate cooling chamber each capable of simultaneously holding a ... | 02/27/2007 |
| 7153584 | Hybrid film, antireflection film comprising it, optical product, and method for restoring the defogging property of hybrid film Hybrid films, such as those having good abrasion-resistance and defogging properties, antireflection films including it, optical products, and methods for restoring the defogging property of the hybrid films are disclosed. The hybrid films having a defogging propert... | 12/26/2006 |
| 7153544 | Method of manufacturing transparent electro-conductive film A touch panel includes a transparent electro-conductive film. The transparent electro-conductive film comprises a primary layer formed on a polymer film, and a transparent electro-conductive thin film or a multi-lamination film composed of at least one metal-compoun... | 12/26/2006 |
| 7145285 | Piezoelectric element, fabrication method for the same, and inkjet head, inkjet recording apparatus and angular velocity sensor including the same A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal ori... | 12/05/2006 |
| 7135418 | Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain... | 11/14/2006 |
| 7129563 | Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1−xGex, where 0.5 | 10/31/2006 |
| 7125758 | Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, wh... | 10/24/2006 |
| 7109129 | Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain... | 09/19/2006 |
| 7101591 | Production method for copolymer film, copolymer film produced by the forming method and semiconductor device using copolymer film This invention provides a process for producing an organic polymer film whereby when using it as an interlayer insulating film in a semiconductor device, the film exhibits higher adhesiveness at its interfaces where other semiconductor materials are in contact with ... | 09/05/2006 |
| 7097878 | Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiOfilms A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films re... | 08/29/2006 |
| 7070833 | Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments A method of passivating the surface of a substrate to protect the surface against corrosion, the surface effects on a vacuum environment, or both. The substrate surface is placed in a treatment environment and is first dehydrated and then the environment is evacuate... | 07/04/2006 |
| 7071094 | Dual layer barrier film techniques to prevent resist poisoning Provided is a process for forming a barrier film to prevent resist poisoning in a semiconductor device by depositing a second nitrogen-free barrier layer on top of a first barrier layer containing nitrogen. A low-k dielectric layer is formed over the second barrier ... | 07/04/2006 |
| 7056806 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure.... | 06/06/2006 |
| 7055236 | Joining method for high-purity ceramic parts A method for joining high-purity ceramic parts useful as parts for semi-conductor production apparatus, in particular, ceramic jigs used in the production of semi-conductors. Two related joining methods are described. First, high purity ceramic parts made of silicon... | 06/06/2006 |
| 7053010 | Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells This invention includes methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming bit line over capacitor arrays of memory cells. In one implementation, a semicondu... | 05/30/2006 |
| 7045170 | Anti-stiction coating for microelectromechanical devices A method for depositing an anti-stiction coating on a MEMS device comprises reacting the vapor of an amino-functionalized silane precursor with a silicon surface of the MEMS device in a vacuum chamber. The method can further comprise cleaning the silicon surface of ... | 05/16/2006 |
| 7037803 | Manufacture of semiconductor device having STI and semiconductor device manufactured A semiconductor device manufacture method has the steps of: (a) forming a polishing stopper layer over a semiconductor substrate; (b) etching the semiconductor substrate to form a trench; (c) forming a first liner insulating layer of silicon oxide over the surface o... | 05/02/2006 |
| 7015061 | Low temperature curable materials for optical applications The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition com... | 03/21/2006 |
| 7005160 | Methods for depositing polycrystalline films with engineered grain structures Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited ... | 02/28/2006 |
| 6998153 | Suppression of NiSiformation in a nickel salicide process using a pre-silicide nitrogen plasma A method that includes placing a wafer within a process chamber, generating a nitrogen plasma that is remote from the process chamber, nitriding a surface of the wafer with the nitrogen plasma, depositing a nickel film over the nitrided silicon substrate surface, an... | 02/14/2006 |
| 6971165 | Method for fabrication of separators for electrode pairs in diodes An improved method for manufacturing a matching pair of electrodes comprises the steps of: fabricating a first electrode with a substantially flat surface; depositing islands of an oxidizable material over regions of the surface; depositing a layer of a third materi... | 12/06/2005 |
| 6967040 | Method of treating cured rubber A curable rubber composition comprising a curable organopolysiloxane or perfluoropolyether group-containing organosilicon compound, a curing agent, and a silica filler having a mean particle size of 0.001-10 μm is cured into a cured rubber. For improving compressio... | 11/22/2005 |
| 6962732 | Process for controlling thin film uniformity and products produced thereby Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate ... | 11/08/2005 |
| 6962859 | Thin films and method of making them Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon-containing precursor. In preferred embodiments, the methods result in Si-containing films that are continuous and have a thickness of about 150 â„« or less, a surface rou... | 11/08/2005 |
| 6962727 | Organosiloxanes The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [Y0.01-1.0SiO1.5-2]a{Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c (wher... | 11/08/2005 |
