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| Number | Title | Issue Date |
| 7393563 | Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of... | 07/01/2008 |
| 7261919 | Silicon carbide and other films and method of deposition A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlle... | 08/28/2007 |
| 7229666 | Chemical vapor deposition method Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned w... | 06/12/2007 |
| 7226875 | Method for enhancing FSG film stability A method for enhancing stability of a fluorinated silicon glass layer is disclosed. A fluorinated silicon glass layer provided on a substrate is subjected to a phosphorous-containing and hydrogen-containing gas such as phosphine (PH3), for example. The ga... | 06/05/2007 |
| 7138186 | Hydrophobic coatings and methods Substrates have a hydrophobic surface coating comprised of the reaction products of methyltrichlorsilane (MTCS) and dimethyldichlorosilane (DMDCS). Most preferably the substrate is glass. An anchor layer is most preferably formed directly onto the glass substrate su... | 11/21/2006 |
| 7098145 | Fabrication of self-assembled monolayers A self-assembled monolayer (SAM) is fabricated using either a semi-fluorinated sulphur containing compound, or a sem-fluorinated silane derivative and compressed carbon dioxide (CO2) as the solvent medium. The temperature and/or pressure of the compressed... | 08/29/2006 |
| 7033642 | Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period o... | 04/25/2006 |
| 7030475 | Method and apparatus for forming a thin film In a method of uniformly forming a thin film on a wafer and an apparatus of using the same, after supplying a first gas, a second gas and a third gas into a reaction chamber in which a wafer is loaded, a thin film is formed on the wafer from the first gas and the se... | 04/18/2006 |
| 6927140 | Method for fabricating a bipolar transistor base A method for forming a base of a bipolar transistor. A narrow base is formed using a flash of boron doping gas in a reaction chamber to create a narrow base with high boron concentration. This method allows for reliable formation of a base with high boron concentrat... | 08/09/2005 |
| 6818250 | Method for forming SIO2 by chemical vapor deposition at room temperature Silicon dioxide (SiO2) films are deposited at room temperature using a chemical vapor deposition (CVD) reaction catalyzed by ammonia or a Lewis base. The SiO2 film growth is accomplished through the reaction of water and certain silicon precurs... | 11/16/2004 |
| 6797340 | Method for depositing refractory metal layers employing sequential deposition techniques A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substra... | 09/28/2004 |
| 6689422 | CVD codeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gette... | 02/10/2004 |
| 6660656 | Plasma processes for depositing low dielectric constant films A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociat... | 12/09/2003 |
| 6610354 | Plasma display panel with a low k dielectric layer A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In ... | 08/26/2003 |
| 6586056 | Silicon based films formed from iodosilane precursors and method of making the same A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having... | 07/01/2003 |
| 6534431 | Process and apparatus for preparing heterogeneous catalysts The invention relates to a process and to an apparatus for preparing a heterogeneous catalyst having at least one catalytically active species bound to the surface of a support material. According to the process, the surface of the support is first pretre... | 03/18/2003 |
| 6528430 | Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3 An atomic layer deposition (ALD) method employing Si2 Cl6 and NH3, or Si2 Cl6 and activated NH3 as reactants. In one embodiment, the invention includes the steps of (a) placing a substrate ... | 03/04/2003 |
| 6503563 | Method of producing polycrystalline silicon for semiconductors from saline gas A rod-form high-purity polycrystalline silicon capable of preventing defects from occurring to a newly deposited silicon layer. To this end, a method of producing a rod-form high-purity polycrystalline silicon, depositing silicon on a rod-form silicon cor... | 01/07/2003 |
| 6428849 | Method for the co-deposition of silicon and nitrogen on stainless steel surface The invention discloses a method for producing a nitrogen-silicon containing stainless steel layer on a metal. The method includes a pack cementation process involving the use of silicon nitride, silica and sodium fluoride as the source materials.... | 08/06/2002 |
| 6419984 | Low pressure chemical vapor deposition with reduced particulate contamination Several modifications have been made to the LPCVD equipment of the prior art in order to reduce the amount of particulate contamination. A bypass vent has been added in parallel with the main vacuum exhaust gate valve. Said bypass vent is left open during... | 07/16/2002 |
| 6413579 | Temperature control of CVD method for reduced haze The invention is a method of making a coated glass substrate having a low haze. A soda-lime glass substrate having at least one surface upon which a coating may be deposited is provided. The glass substrate is heated and maintained at a temperature suffic... | 07/02/2002 |
| 6340398 | Oxidation protective coating for Mo-Si-B alloys A method for enhancing the oxidation resistance of substrates fabricated from metallic molybdenum and alloys containing at least 50% molybdenum which comprises depositing silicon on the surface of the substrate under conditions which cause the formation o... | 01/22/2002 |
| 6326064 | Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen content A process for reducing intrinsic stress and/or hydrogen content of a SiOx film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherei... | 12/04/2001 |
| 6284316 | Chemical vapor deposition of titanium A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a ... | 09/04/2001 |
| 6258411 | Industrial material with fluorine passivated film and process of manufacturing the same An industrial material such as metal, ceramics or plastics whose surface has a film passivated by fluoridation and a process of manufacturing the above industrial material. The industrial material comprises a substrate, a nickel alloy film formed on the s... | 07/10/2001 |
| 6149976 | Method of manufacturing fluorine-containing silicon oxide films for semiconductor device The fluorine type silicon oxide film is formed using plasma CVD apparatus on a semiconductor wafer using a gas which is a mixture of a silicon source gas, a silicon type fluorine source gas, an oxidizing agent and an inert gas. The oxide film is formed us... | 11/21/2000 |
| 6143362 | Chemical vapor deposition of titanium A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a ... | 11/07/2000 |
| 6057250 | Low temperature reflow dielectric-fluorinated BPSG An apparatus and method are provided for forming a fluorine doped borophosphosilicate (F-BPSG) glass on a semiconductor device using a low pressure chemical vapor deposition process. The F-BPSG glass exhibits a substantially void-free and particle-free la... | 05/02/2000 |
| 5981366 | Method for manufacturing non-volatile memory A method for forming a non-volatile memory having a floating gate electrode arranged therein. The floating gate electrode being formed by alternatingly laminating on a silicon substrate a polysilicon layer and a tungsten silicide layer with a tunnel oxide... | 11/09/1999 |
| 5876796 | Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process Process for selectively depositing a refractory metal silicide on a surface of a monocrystalline or polycrystalline silicon wafer, comprising: a step of preparing said surface, consisting in forming a silicon oxide or silicon oxynitride layer having a thi... | 03/02/1999 |
| 5834059 | Process of depositing a layer of material on a wafer with susceptor back coating The present disclosure is directed to a process of depositing a layer of a material on a wafer, which comprises depositing a layer of the same material to be deposited on the wafer on the back surface of a susceptor.... | 11/10/1998 |
| 5792326 | Method and apparatus for generating ozone and methods of its use Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone genera... | 08/11/1998 |
| 5700520 | Low temperature, high pressure silicon deposition method A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temp... | 12/23/1997 |
| 5643633 | Uniform tungsten silicide films produced by chemical vapor depostiton A tungsten silicide film is deposited from WF6 and SiCl2 H2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSix film, and the WSix film is... | 07/01/1997 |
| 5558910 | Uniform tungsten silicide films produced by chemical vapor deposition A tungsten silicide film is deposited from WF6 and SiCl2 H2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSix film, and the WSix film is... | 09/24/1996 |
| 5534294 | Process for producing Semiconductor silicon wafer Provided is a process for producing a semiconductor silicon wafer by which an intrinsic gettering effect can be improved and at the same time the top side can be made free from faults. A silicon ingot is produced and sliced to obtain silicon wafers. Then,... | 07/09/1996 |
| 5522911 | Device and method for forming a coating by pyrolysis A device for the formation, by pyrolysis, of a coating of metal or a metal compound on one face of a hot glass substrate which is in motion by bringing the face into contact with a gaseous reagent includes a roof; support device for conveying the hot glas... | 06/04/1996 |
| 5500249 | Uniform tungsten silicide films produced by chemical vapor deposition A tungsten silicide film is deposited from WF6 and SiCl2 H2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSix film, and the WSix film is... | 03/19/1996 |
| 5482003 | Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By se... | 01/09/1996 |
| 5470619 | Method of the production of polycrystalline silicon thin films A method is disclosed for the production of polycrystalline silicon thin films characterized by performing heat treatment of amorphous silicon thin films deposited on a substrate at a relatively low temperature of between 300° and 600° C. under a pressu... | 11/28/1995 |
