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Class 427/255.11 - Base includes an inorganic compound containing silicon or metal (e.g., glass, ceramic, brick, etc.)


Subclass of Class 427 - Coating processes
Definition: Process wherein the composition of the base includes an
No. of patents: 146
Last issue date: 11/01/2011


1        
NumberTitleIssue Date
RE42887Silicon carbide and other films and method of deposition
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlle...
11/01/2011
7763317High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces
Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or triflu...
07/27/2010
7442412Hydrophobic coating for oxide surfaces
The disclosure relates to hydrophobic coatings for oxidized surfaces and methods of producing the same. Such coatings may be produced by applying a compound of the general formula AXn or A(R1)mXn to an oxidized surface fol...
10/28/2008
7429405Method of forming a coating film
A method for forming a coating film at part of a surface of a substrate includes, in sequence, a first step of applying a masking agent having inert particles over part of the substrate through a screen having blocked areas, a second step of depositing the coating f...
09/30/2008
7419702Method for processing a substrate
A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing ...
09/02/2008
7396564Method and apparatus for controlling the length of a carbon nanotube
This invention relates to a method and apparatus for controlling the length of a carbon nanotube, in cooperation with a substrate having at least one reference level on a surface of the substrate on which at least one carbon nanotube is formed, comprising at least o...
07/08/2008
7374818Coating system for silicon based substrates
A bond coat system for silicon based substrates wherein a compliant layer having an elastic modulus of between 30 and 130 GPa is provided between the silicon based substrate and a silicon metal containing oxygen gettering layer. ...
05/20/2008
7354619Protection of the SiC surface by a GaN layer
The invention relates to a process for protecting the surface of an SiC substrate. This process comprises deposition of a temporary protection layer with a thickness equal to at least two monolayers on the surface of the substrate to be protected, the protection lay...
04/08/2008
7344754Film formation method
A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including ...
03/18/2008
7273635Method of forming aluminide diffusion coatings
Method of forming an outwardly grown aluminide diffusion coating on a superalloy substrate disposed in a coating retort including the steps of heating the substrate to a temperature of 900 to 1200 degrees C., flowing a coating gas comprising aluminum trichloride and...
09/25/2007
7271112Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry
Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, ...
09/18/2007
7261919Silicon carbide and other films and method of deposition
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlle...
08/28/2007
7240562Method for modeling material constitutive behavior
In modeling material constitutive behavior, a methodology determines tool-chip friction and a position of a stagnation point on a cutting tool. The methodology includes measuring a ratio of cutting force to thrust force and measuring a chip thickness, hch...
07/10/2007
7202185Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer
An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surfac...
04/10/2007
7189430Directed assembly of highly-organized carbon nanotube architectures
A method of controllably aligning carbon nanotubes to a template structure to fabricate a variety of carbon nanotube containing structures and devices having desired characteristics is provided. The method allows simultaneous, selective growth of both vertically and...
03/13/2007
7135057Gas storage medium and methods
A storage medium for gas molecules has a nanowire core and a number of organic molecules attached to the exterior surface of the nanowire. The organic molecules attached to the exterior of the nanowire are adapted to releasably hold gas molecules. Methods for making...
11/14/2006
7097878Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiOfilms
A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films re...
08/29/2006
7083825Composition used in producing calcium-rich getter thin film
An improved getter device and method for forming a calcium-rich getter thin film in an electronic vacuum device is disclosed. The getter device includes a powder of a Ca—Ba—Al ternary alloy composed of between 53% and 56.8% by weight of aluminum, from 36% to 41....
08/01/2006
7067416Method of forming a conductive contact
Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The method comprises depositing a conductive material over a substrate to fill a contact opening, removing excess material from the substrate leaving th...
06/27/2006
7045170Anti-stiction coating for microelectromechanical devices
A method for depositing an anti-stiction coating on a MEMS device comprises reacting the vapor of an amino-functionalized silane precursor with a silicon surface of the MEMS device in a vacuum chamber. The method can further comprise cleaning the silicon surface of ...
05/16/2006
7018815Method for producing vitamin B12 from hydrogen-metabolizing methane bacterium
Mesophilic methane bacteria obtained from digested sludge are acclimatized in an H2/CO2 medium and the acclimatized methane bacteria are grown on a support inclusive of inorganic nutritional salts of trace metal elements by using an immobilized...
03/28/2006
6998153Suppression of NiSiformation in a nickel salicide process using a pre-silicide nitrogen plasma
A method that includes placing a wafer within a process chamber, generating a nitrogen plasma that is remote from the process chamber, nitriding a surface of the wafer with the nitrogen plasma, depositing a nickel film over the nitrided silicon substrate surface, an...
02/14/2006
6982341Volatile copper aminoalkoxide complex and deposition of copper thin film using same
A volatile copper aminoalkoxide complex of formula (I) can form a copper thin film having an improved quality by metal organic chemical vapor deposition (MOCVD): wherein, R1, R2, R3 and ...
01/03/2006
6958172Hybrid film, antireflection film comprising it, optical product, and method for restoring the defogging property of hybrid film
Hybrid films, such as those having good abrasion-resistance and defogging properties, antireflection films including it, optical products, and methods for restoring the defogging property of the hybrid films are disclosed. The hybrid films having a defogging propert...
10/25/2005
6936141Dry etching and mirror deposition processes for silicone elastomer
According to the invention semiconductor processing procedures can be applied to silicone elastomeric materials. The surface tension of the elastomeric material is changed by depositing a thin layer of silicon, silicon nitride, silicon dioxide or a combination there...
08/30/2005
6921556Method of film deposition using single-wafer-processing type CVD
A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamb...
07/26/2005
6881447Chemically and electrically stabilized polymer films
Preparation methods and stabilization processes for low k polymers that consist of sp2C—X and HC-sp3Cα—X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. O...
04/19/2005
6861103Synthesis of functional polymers and block copolymers on silicon oxide surfaces by nitroxide-mediated living free radical polymerization in vapor phase
Nitroxide mediated free radical polymerization of vaporized vinyl monomers, including acrylic acid (AAc), styrene (St), N-2-(hydroxypropyl)methacrylamide (HPMA) and N-isopropyl acrylamide (NIPAAm), on silicon wafers is demonstrated. FTIR, ellipsometry and contact an...
03/01/2005
6854602Hydrogen-selective silica-based membrane
A hydrogen permselective membrane, a method of forming a permselective membrane and an apparatus comprising a permselective membrane, a porous substrate and an optional intermediate layer are described. Using chemical vapor deposition (CVD) at low reactant gas conce...
02/15/2005
6838179Pyrolytic layer of aluminium oxynitride and glazing comprising same
The invention concerns glass panels comprising thin layers in particular for providing them with solar protective or low-emissive properties, and also comprising other thin layers for correcting rainbow effects induced by the former. The invention is characterized i...
01/04/2005
6818289Mesoporous films having reduced dielectric constants
A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming flui...
11/16/2004
6811580Inserts for metal cutting purposes
The present invention relates to a cutting tool with increased tool life when machining grey cast iron. The tool comprises a solid CBN-containing body containing more than 60 vol % CBN and a coating. The coating consists of at least one layer of metal nitride, carbo...
11/02/2004
6808747Coating boron carbide on aluminum
A method of depositing boron carbide on an aluminum substrate, particularly useful for a plasma etch reactor having interior surfaces facing the plasma composed of boron carbide, preferably principally composed of B4C. Although in this application, the bo...
10/26/2004
6805909Oxidation-protected brake disk and method of making same
An oxidation-protected brake disk is made of a fiber-reinforced ceramic material. A method of producing such a brake disk comprises applying at least one paint layer to a brake disk. In order to reduce damage to the brake disk under extreme thermal stress, the brake...
10/19/2004
6802999Method of fabricating protective coating for a crucible with the coating having channels formed therein
A method is provided for the fabrication of a protective coating for a crucible with channels being formed in the coating. A material is adhered to the outer wall of the crucible to form a pattern thereon. The outer wall of the crucible along with the pattern of mat...
10/12/2004
6797323Method of forming silicon oxide layer
A method of forming a silicon oxide layer comprising initiating formation of a silicon oxide layer on a surface of a silicon layer by an oxidation method using wet gas at an ambient temperature at which no silicon atom is eliminated from the surface of the silicon l...
09/28/2004
6786968Method for low temperature photonic crystal structures
A method for making photonic crystal structures using amorphous silicon that is temperature compatible with a wide variety of substrates. Both hydrogenated and non-hydrogenated amorphous silicon may be used. ...
09/07/2004
6756322Method for evenly coating semiconductor laser end faces and frame used in the method
A method with which all semiconductor lasers can be used as products is provided by regulating reflectance variations of all the semiconductor laser end faces arranged in an electron beam deposition apparatus after completion of deposition to a predetermined range w...
06/29/2004
6750110Continuous good step coverage CVD platinum metal deposition
A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas over an organic platinum based metal precursor until the non-reactive gas is saturated with the precursor. The platinum based metal film is deposited onto a sub...
06/15/2004
6736942Freestanding reactive multilayer foils
Reactive foils and their uses are provided as localized heat sources useful, for example, in ignition, joining and propulsion. An improved reactive foil is preferably a freestanding multilayered foil structure made up of alternating layers selected from materials th...
05/18/2004
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