Did You Know...
...that several people are credited with the invention of the flush toilet? Most people have heard of Thomas Crapper (1837-1910), the sanitary engineer who invented the valve-and-siphon arrangement that made the modern toilet possible. Another claimant to "the throne" was British inventor Alexander Cumming who patented a toilet in 1775. Then there's a nameless Minoan (a native of ancient Crete) who lived 4,000 years ago who supposedly was ahead of his time and created the first flush toilet!
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| Number | Title | Issue Date |
| 7485340 | Production of elemental films using a boron-containing reducing agent The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment th... | 02/03/2009 |
| 7429403 | Gas distributor for vapor coating method and container A method for introducing an inert carrier gas into a coating container used to provide a metallic coating on articles. The method includes introducing the inert carrier gas into the coating container as a plurality of carrier gas streams proximate the top of the coa... | 09/30/2008 |
| 7422769 | Protective coating for application to a substrate and method for manufacturing a protective coating A refractory, oxidation-resistant, and corrosion-resistant protective coating for application to a substrate, in particular for application to parts of turbines or aircraft propulsion engines, is described, including a spray coating made of a thermally sprayed, prim... | 09/09/2008 |
| 7390535 | Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is capable of forming a protective complex oxide upon subsequent heating in a... | 06/24/2008 |
| 7371428 | Duplex gas phase coating Method of forming different diffusion aluminide coatings on different surface regions of the same superalloy substrate involves positioning the substrate in a coating chamber having a aluminum-bearing coating gas flowing therein with a first substrate surface region... | 05/13/2008 |
| 7344757 | Method for treating or pretreating containers A process for the treatment or pretreatment of containers made of aluminum, aluminum-containing alloys, magnesium-containing alloys, iron-containing materials such as steel, coated iron-containing materials such as galvanized steel, or aluminum alloys, tinplate, bra... | 03/18/2008 |
| 7338645 | Method and system for reducing decomposition byproducts in a methanol to olefin reactor system Disclosed is a method and system for reducing the formation of metal catalyzed side-reaction byproducts formed in the feed vaporization and introduction system of a methanol to olefin reactor system by forming and/or coating one or more of the heating devices, feed ... | 03/04/2008 |
| 7332024 | Aluminizing composition and method for application within internal passages An aluminizing composition includes an aluminum-based powder, an inert organic pyrolysable thickener, and a binder selected from the group consisting of colloidal silica, at least one organic resin, and combinations thereof. A method for aluminizing an internal pass... | 02/19/2008 |
| 7311942 | Method for binding halide-based contaminants during formation of a titanium-based film A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition pr... | 12/25/2007 |
| 7310949 | Method and apparatus for arresting a crack within a body An inseparable assembly includes a body having a first surface and a second surface. The body includes an oxide-based ceramic matrix composite material having a first predetermined ductility. The assembly further includes a crack extending through the body between t... | 12/25/2007 |
| 7294361 | Method and device for gas phase diffusion coating of metal components A process for gas diffusion coating of metallic components; in which a component surface which is to be coated is brought into contact with a metal halide as coating gas, to form a diffusion layer with a defined layer thickness and a defined coating metal content in... | 11/13/2007 |
| 7273635 | Method of forming aluminide diffusion coatings Method of forming an outwardly grown aluminide diffusion coating on a superalloy substrate disposed in a coating retort including the steps of heating the substrate to a temperature of 900 to 1200 degrees C., flowing a coating gas comprising aluminum trichloride and... | 09/25/2007 |
| 7271038 | Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film is ... | 09/18/2007 |
| 7264846 | Ruthenium layer formation for copper film deposition A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and ... | 09/04/2007 |
| 7262125 | Method of forming low-resistivity tungsten interconnects Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. ... | 08/28/2007 |
| 7258900 | Magnetic planarization of pigment flakes A magnetic field is applied to planarize magnetic pigment flakes relative to a surface. Pigment flakes, such as optically variable pigment flakes, are used in a variety of paints, inks, extrusions, powder coatings, and other forms for decorative and security applica... | 08/21/2007 |
| 7256144 | Method for forming a metal oxide film A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The meth... | 08/14/2007 |
| 7235482 | Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology An atomic layer deposition method is used to deposit a TiN or TiSiN film having a thickness of about 50 nm or less on a substrat. A titanium precursor which is tetrakis(dimethylamido)titanium (TDMAT), tetrakis(diethylamido)titanium (TDEAT), or Ti{OCH(CH3)... | 06/26/2007 |
| 7233053 | Integrated semiconductor product with metal-insulator-metal capacitor To fabricate an integrated semiconductor product with integrated metal-insulator-metal capacitor, first of all a dielectric auxiliary layer (6) is deposited on a first electrode (2, 3, 5). This auxiliary layer (6) is then opened up (15) v... | 06/19/2007 |
| 7220671 | Organometallic precursors for the chemical phase deposition of metal films in interconnect applications Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition... | 05/22/2007 |
| 7201943 | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a secon... | 04/10/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7163718 | Method of selective region vapor phase aluminizing A process for forming diffusion aluminide coatings on an uncoated surface of a substrate, without interdiffusing a sufficient amount of aluminum into a coating layer to adversely affect the coating growth potential and mechanical properties of said coating layer. A ... | 01/16/2007 |
| 7163747 | Component comprising a masking layer Masking layers for components according to the prior art react with the base material of the component and/or are difficult to remove again. The component according to the invention has a masking layer which can very easily be removed following coating of the compon... | 01/16/2007 |
| 7160752 | Fabrication of advanced silicon-based MEMS devices A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on th... | 01/09/2007 |
| 7146990 | Process for repairing sulfidation damaged turbine components A process is provided for cleaning a surface of an internal cavity of a gas turbine component having sulfidation or sulfur bearing deposits comprising: inserting into the internal cavity a fluoride salt; and heating the fluoride salt and the component in an inert at... | 12/12/2006 |
| 7144809 | Production of elemental films using a boron-containing reducing agent The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment th... | 12/05/2006 |
| 7138014 | Electroless deposition apparatus An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble me... | 11/21/2006 |
| 7115171 | Method for removing engine deposits from turbine components and composition for use in same A method and cleaning composition for removing engine deposits from turbine components, in particular turbine disks and turbine shafts. This method comprises the following steps: (a) providing a turbine component having a surface with engine deposits thereon, wherei... | 10/03/2006 |
| 7115304 | High throughput surface treatment on coiled flexible substrates One or more substrates may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The one or more coiled substrates are placed in a treatment chamber where substantially an entire surface of the one or more coiled s... | 10/03/2006 |
| 7102229 | Capacitor containing high purity tantalum Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum. ... | 09/05/2006 |
| 7093335 | Coated article and method for repairing a coated surface A method is provided for repairing a surface portion of an article including a metallic environmental resistant coating on a substrate. The coating includes a coating outer portion bonded with the substrate through a diffusion zone that includes at least one feature... | 08/22/2006 |
| 7094691 | MOCVD of tungsten nitride thin films using W(CO)and NHfor copper barrier applications A method of forming a tungsten nitride thin film in an integrated circuit includes preparing a silicon substrate on a silicon wafer and placing the silicon wafer in a heatable chuck in a CVD vacuum chamber; placing a known quantity of a tungsten source in a variable... | 08/22/2006 |
| 7083827 | Nickel-base superalloy having an optimized platinum-aluminide coating A nickel-base superalloy substrate includes a surface region having an integrated aluminum content of from about 18 to about 24 percent by weight and an integrated platinum content of from about 18 to about 45 percent by weight, with the balance components of the su... | 08/01/2006 |
| 7071118 | Method and apparatus for fabricating a conformal thin film on a substrate A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser p... | 07/04/2006 |
| 7063740 | Process for strengthen grain boundaries of an article made from a Ni based superalloy It is disclosed a method for strengthen the grain boundaries of an article (1) made from a Ni based superalloy while the article (1) is in the solid state and containing at least one grain boundary. A surface diffusion process is applied to the article... | 06/20/2006 |
| 7060614 | Method for forming film In a deposition method according to the present invention, a substrate (10) is first arranged in a processing vessel to carry out a heat-up step. Then, Si-containing gas, such as SiH4 gas, is supplied into the processing vessel to carry out an init... | 06/13/2006 |
| 7048973 | Metal film vapor phase deposition method and vapor phase deposition apparatus A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, ... | 05/23/2006 |
| 7037574 | Atomic layer deposition for fabricating thin films An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. T... | 05/02/2006 |
| 7034196 | Method and apparatus for reducing decomposition byproducts in a methanol to olefin reactor system Disclosed is a method and apparatus for reducing the amount of metal catalyzed side-reaction byproducts formed in the feed vaporization and introduction system of a methanol to olefin reactor system by monitoring and/or maintaining the temperature of at least a port... | 04/25/2006 |
