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| Number | Title | Issue Date |
| 8080282 | Method for forming silicon carbide film containing oxygen A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in i... | 12/20/2011 |
| 8034410 | Protective inserts to line holes in parts for semiconductor process equipment Inserts are used to line openings in parts that form a semiconductor processing reactor. In some embodiments, the reactor parts delimit a reaction chamber. The reactor parts may be formed of graphite. A layer of silicon carbide is deposited on surfaces of the openin... | 10/11/2011 |
| 7807222 | Semiconductor processing parts having apertures with deposited coatings and methods for forming the same Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part a... | 10/05/2010 |
| 7749563 | Two-layer film for next generation damascene barrier application with good oxidation resistance A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as ... | 07/06/2010 |
| 7413775 | Insulating film material containing an organic silane compound, its production method and semiconductor device An insulating film material formed by chemical vapor deposition, which contains an organic silane compound having such a structure that at least one secondary hydrocarbon group and/or tertiary hydrocarbon group is directly bonded to a silicon atom. ... | 08/19/2008 |
| 7404983 | Method and apparatus for open-air coating by laser-induced chemical vapor deposition The present inventions pertain to a method of applying a solid protective coating to articles, to a system capable of depositing a solid film layer on articles, and to hermetically sealed articles. In particular, films are deposited on fused quartz substrates, optic... | 07/29/2008 |
| 7384486 | Chamber cleaning method A method for cleaning a process chamber in such a manner that chamber-cleaning chemicals or agents are incapable of remaining in the chamber after cleaning and chemically interfering with semiconductor fabrication or other processes subsequently carried out in the c... | 06/10/2008 |
| 7377977 | High-purity crystal growth A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are... | 05/27/2008 |
| 7341761 | Methods for producing low-k CDO films Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules w... | 03/11/2008 |
| 7323219 | Apparatus and method for applying diamond-like carbon coatings The invention relates to a coating and apparatus and method for applying the same, said coating including Diamond Like Carbon (DLC) applied by chemical vapor deposition using a pulsed DC biased power supply, typically having an initial metal layer and followed by a ... | 01/29/2008 |
| 7318847 | Structured coating system Workpiece with at least one functional face and a layer system deposited on at least a portion of the functional face as well as a structure pattern, which encompasses at least a portion of the layer system and which is comprised of at least one three dimensional mi... | 01/15/2008 |
| 7311946 | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially... | 12/25/2007 |
| 7306826 | Use of biased fabric to improve properties of SiC/SiC ceramic composites for turbine engine components A method for making a ceramic matrix composite turbine engine component, wherein the method includes providing a plurality of biased ceramic plies, wherein each biased ply comprises ceramic fiber tows, the tows being woven in a first warp direction and a second weft... | 12/11/2007 |
| 7288205 | Hermetic low dielectric constant layer for barrier applications Methods and apparatus are provided for processing a substrate with a hermetic dielectric layer. In one aspect, the invention provides a method for processing a substrate including providing the substrate to a processing chamber, introducing a processing gas comprisi... | 10/30/2007 |
| 7288284 | Post-cleaning chamber seasoning method A method for seasoning a process chamber is disclosed. The seasoning method includes providing a seasoning film on the interior surfaces of a process chamber, typically after cleaning of the chamber. ... | 10/30/2007 |
| 7285312 | Atomic layer deposition for turbine components A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substr... | 10/23/2007 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7261919 | Silicon carbide and other films and method of deposition A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlle... | 08/28/2007 |
| 7256425 | Methods of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a ... | 08/14/2007 |
| 7253121 | Method for forming IMD films A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle. ... | 08/07/2007 |
| 7247513 | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer for... | 07/24/2007 |
| 7239017 | Low-k B-doped SiC copper diffusion barrier films The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintai... | 07/03/2007 |
| 7205249 | CVD plasma assisted low dielectric constant films A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties ... | 04/17/2007 |
| 7200460 | Method of depositing low dielectric constant silicon carbide layers A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-dep... | 04/03/2007 |
| 7195834 | Metallized conducting polymer-grafted carbon material and method for making A composition comprising particulate carbonaceous material and a conducting polymer containing hetero atoms. The composition can further comprise a metal. Devices comprising the composition can be constructed including supported electrocatalysts, membrane electrode ... | 03/27/2007 |
| 7192486 | Clog-resistant gas delivery system Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing... | 03/20/2007 |
| 7183201 | Selective etching of organosilicate films over silicon oxide stop etch layers A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to sel... | 02/27/2007 |
| 7179505 | Manufacturing method of MoSi-SiC nanocomposite coating The embodiments of the invention relate to a MoSi2-SiC nanocomposite coating layer formed on surfaces of refractory metals such as Mo, Nb, Ta, W and their alloys. The MoSi2-SiC nanocomposite coating layer is manufactured by forming a molybdenum... | 02/20/2007 |
| 7175930 | Conducting polymer-grafted carbon material for fuel cell applications A composition comprising particulate carbonaceous material and a conducting polymer containing hetero atoms. The composition can further comprise a metal. Devices comprising the composition can be constructed including supported electrocatalysts, membrane electrode ... | 02/13/2007 |
| 7176121 | Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A... | 02/13/2007 |
| 7166488 | Metal MEMS devices and methods of making same Metal MEMS structures are fabricated from metal substrates, preferably titanium, utilizing micromachining processes with a new deep etching procedure to provide released microelectromechanical devices. The deep etch procedure includes metal anisotropic reactive ion ... | 01/23/2007 |
| 7160625 | Insulating film material containing an organic silane compound, its production method and semiconductor device An insulating film material formed by chemical vapor deposition, which contains an organic silane compound having such a structure that at least one secondary hydrocarbon group and/or tertiary hydrocarbon group is directly bonded to a silicon atom. ... | 01/09/2007 |
| 7153584 | Hybrid film, antireflection film comprising it, optical product, and method for restoring the defogging property of hybrid film Hybrid films, such as those having good abrasion-resistance and defogging properties, antireflection films including it, optical products, and methods for restoring the defogging property of the hybrid films are disclosed. The hybrid films having a defogging propert... | 12/26/2006 |
| 7153543 | Refractory-carbon composite brake friction elements Refractory carbide particles are located in a defined area of a matrix, specifically silicon carbide particles are encapsulated within a porous matrix or carbon precursor, by locating particles of refractory carbide-forming material or a precursor thereof in a defin... | 12/26/2006 |
| 7144606 | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon ... | 12/05/2006 |
| 7138332 | Method of forming silicon carbide films To deposit silicon onto a substrate, there is introduced into a reaction zone a gas including source gases of silicon, carbon, nitrogen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reacti... | 11/21/2006 |
| 7138158 | Forming a dielectric layer using a hydrocarbon-containing precursor In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydroc... | 11/21/2006 |
| 7138186 | Hydrophobic coatings and methods Substrates have a hydrophobic surface coating comprised of the reaction products of methyltrichlorsilane (MTCS) and dimethyldichlorosilane (DMDCS). Most preferably the substrate is glass. An anchor layer is most preferably formed directly onto the glass substrate su... | 11/21/2006 |
| 7117064 | Method of depositing dielectric films A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field... | 10/03/2006 |
| 7108840 | Method for manufacturing nanophase TiC-based composite powders by metallothermic reduction Disclosed herein is a method for economically manufacturing high quality TiC powder, TiCN powder or ultrafine nanophase TiC+Ni (Co, Al) and TiCN+Ni (Co, Al) composite powders by means of metallothermic reduction. The method comprises the steps of preparing a startin... | 09/19/2006 |
