Bizarre Patents
Combination Beverage Container and Spittoon
A combination beverage container and spittoon includes a bottom portion including outer wall and a first inner wall defining a spittoon space.
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| Number | Title | Issue Date |
| 7288285 | Delivering organic powder to a vaporization zone A method for vaporizing organic materials and condensing them onto a surface to form a layer, comprising: providing a quantity of organic material in a powdered form in a first container; fluidizing the organic material in the first container and transferring such f... | 10/30/2007 |
| 7288479 | Method for forming a barrier/seed layer for copper metallization A method for improving adhesion of Cu to a Ru layer in Cu metallization. The method includes providing a substrate in a process chamber of a deposition system, depositing a Ru layer on the substrate in a chemical vapor deposition process, and forming a Cu seed layer... | 10/30/2007 |
| 7288324 | Synthesis of tetragonal phase stabilized nano and submicron sized nanoparticles Novel, monodispersed, spherical ZrO2 particles in the size range of approximately 10 to approximately 600 nm exhibiting metastable tetragonal crystal structure at room temperature and novel methods of preparation. The ZrO2 particles are approxi... | 10/30/2007 |
| 7288286 | Delivering organic powder to a vaporization zone A method for vaporizing organic material and condensing it onto a surface to form a layer, comprising: providing a quantity of first organic material in a powdered form in a first container and a quantity of second organic material in a second container spaced from ... | 10/30/2007 |
| 7288292 | Ultra low k (ULK) SiCOH film and method The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constan... | 10/30/2007 |
| 7289865 | Optimization algorithm to optimize within substrate uniformities A method to optimize semiconductor processing equipment (hardware settings and process conditions) to minimize non-uniformities within a wafer based on linescan measurements and a calculation of or prediction for a polar map. Measurements of a metrology value are ta... | 10/30/2007 |
| 7285308 | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium uppe... | 10/23/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7281869 | Coating and developing system and coating and developing method A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist fil... | 10/16/2007 |
| 7282158 | Method of processing a workpiece This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a ... | 10/16/2007 |
| 7282239 | Systems and methods for depositing material onto microfeature workpieces in reaction chambers In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly i... | 10/16/2007 |
| 7282271 | Durable thermal barrier coatings A durable protective coating may be formed by applying a thin layer of metastable alumina to a bond coating on a substrate. A thermal barrier coating may then be applied to the metastable alumina and the resulting part may be heat treated to transform the metastable... | 10/16/2007 |
| 7283677 | Measuring sub-wavelength displacements Measurement systems and methods extend the use of optical navigation to measure displacements smaller than a wavelength of the light used to capture images of an object measured. Nanometer-scale movements can thus be measured, for example, in equipment used for manu... | 10/16/2007 |
| 7282460 | Transfer chamber for cluster system A transfer chamber for a cluster system includes a first body, a second body attached at one side of the first body, and a cover combined with an upper portion of the first body. The transfer chamber further includes a third body at another side of the first body, w... | 10/16/2007 |
| 7279247 | Carbon nanotube pastes and methods of use Dispersable pastes comprising single-walled carbon nanotubes (SWNT) in water or in an organic solvent are prepared. The method of preparing the dispersable pastes comprises in general the following steps: a) removal of the catalyst used during the synthesis of SWNT;... | 10/09/2007 |
| 7279078 | Thin-film coating for wheel rims A process for coating a non-uniform, thin-film, dichroic pattern to a wheel rim or motorcycle part. The thin-film coating adds a colored or iridescent pattern to the wheel rim or motorcycle part, while maintaining other characteristics, such as brilliance, shine, du... | 10/09/2007 |
| 7279421 | Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors A method and a deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors using CO gas and a dilution gas. The method includes providing a substrate in a process chamber of a processing system, forming a process gas containing a... | 10/09/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7276795 | Small grain size, conformal aluminum interconnects and method for their formation A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mi... | 10/02/2007 |
| 7276444 | Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device A method for depositing a metal compound film on the wafer by using a vapor phase deposition apparatus 100, including: forming a thin film on the wafer in an interior of the vapor phase deposition apparatus 100 by introducing a source gas for the metal... | 10/02/2007 |
| 7276443 | Method for forming metal wiring in semiconductor device Disclosed is a method for forming a metal wiring in a semiconductor device in order to improve the operational speed of the semiconductor device. The method includes the steps of depositing an interlayer dielectric film on a silicon substrate, in which the interlaye... | 10/02/2007 |
| 7273814 | Method for forming a ruthenium metal layer on a patterned substrate A method for forming a ruthenium metal layer includes providing a patterned substrate in a process chamber of a deposition system, where the patterned substrate contains one or more vias or trenches, or combinations thereof, depositing a first ruthenium metal layer ... | 09/25/2007 |
| 7273526 | Thin-film deposition apparatus A gas-feeding apparatus configured to be connected to an evacuatable reaction chamber includes a gas-distribution head for introducing gases into the chamber through a head surface. The gas-feeding head includes a first section for discharging a gas through the head... | 09/25/2007 |
| 7273635 | Method of forming aluminide diffusion coatings Method of forming an outwardly grown aluminide diffusion coating on a superalloy substrate disposed in a coating retort including the steps of heating the substrate to a temperature of 900 to 1200 degrees C., flowing a coating gas comprising aluminum trichloride and... | 09/25/2007 |
| 7270848 | Method for increasing deposition rates of metal layers from metal-carbonyl precursors A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas contai... | 09/18/2007 |
| 7271940 | Deposition of photosensitive media for digital hologram recording Hologram production devices can include holographic recording material deposition systems to deposit holographic recording material as needed by the hologram production device. Various nozzles, ink jets, and similar devices can be used to deposit one or more compone... | 09/18/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7270714 | Surface treating apparatus A surface treating process according to the present invention, a vapor deposited film is formed from an easily oxidizable vapor-depositing material on the surface of a work by evaporating the vapor-depositing material in a state in which the vapor deposition control... | 09/18/2007 |
| 7267843 | Textile fabric and yarn composed of synthetic fibers, preparation thereof and use thereof Textile fabric composed of synthetic fibers is subjected to a gas phase fluorination in a fluorine/inert gas atmosphere having a fluorine concentration in the range from 0.1 to 10% in order that the synthetic fiber surfaces may be activated in such a way that they a... | 09/11/2007 |
| 7267842 | Method for removing titanium dioxide deposits from a reactor A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising... | 09/11/2007 |
| 7268365 | Volatile copper (II) complexes and reducing agents for deposition of copper films by Atomic Layer Deposition The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process. ... | 09/11/2007 |
| 7264978 | Field emission type cold cathode and method of manufacturing the cold cathode A field emission type cold cathode, comprising a substrate having a conductivity at least on the surface thereof, an insulation layer formed on the substate and having a first opening part, a gate electrode layer formed on the insulation layer, having a center gener... | 09/04/2007 |
| 7264846 | Ruthenium layer formation for copper film deposition A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and ... | 09/04/2007 |
| 7262130 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have... | 08/28/2007 |
| 7262390 | Apparatus and adjusting technology for uniform thermal processing An adjusting technology of thermal processing is provided. A heating lamp and a reflector are disposed over a wafer and the heat flux distribution on the wafer generated by the individual heating lamp is measured and adjusted. A set of heating lamps formed by heatin... | 08/28/2007 |
| 7262505 | Selective electroless-plated copper metallization Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on... | 08/28/2007 |
| 7259055 | Method of forming high-luminescence silicon electroluminescence device A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of ... | 08/21/2007 |
| 7258934 | Thermal barrier coating and a method of applying such a coating Method and arrangement for providing a ceramic thermal barrier coating, TBC, deposited and attached directly to a metallic substrate (2), or an intermediate bond coating (3) deposited on such a substrate (2). The TBC includes at least two layers... | 08/21/2007 |
| 7259085 | Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method ... | 08/21/2007 |
