Bizarre Patents
Smoking Cessation Lighter and Method
A lighter for tobacco products suppresses the urge to smoke by operant conditioning.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7221017 | Memory utilizing oxide-conductor nanolaminates Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A float... | 05/22/2007 |
| 7220458 | Spray shadowing for stress relief and mechanical locking in thick protective coatings A method for applying a protective coating on an article, comprising the following steps: selecting an article with a surface for applying a coating thickness; creating undercut grooves on the article, where the grooves depend beneath the surface to a bottom portion... | 05/22/2007 |
| 7220665 | H plasma treatment Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive layer on the first conductive layer, subjecting the core conductive l... | 05/22/2007 |
| 7220614 | Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor depositio... | 05/22/2007 |
| 7220681 | Semiconductor device and method of fabricating the same A semiconductor device including a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semicon... | 05/22/2007 |
| 7220450 | Process for coating substrates using vapour deposition The invention relates to a process for applying a coating to a substrate wherein the coating is formed of at least two components or elements. In a preferred embodiment, the coating is formed of at least two metals. In accordance with the invention, the coating is a... | 05/22/2007 |
| 7220312 | Methods for treating semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 05/22/2007 |
| 7217326 | Chemical vapor deposition apparatus A chemical vapor deposition apparatus is provided, which includes: a chamber having an inner space; a gas feed member for supplying a gas into the chamber; a susceptor disposed in the chamber and supporting a substrate; a diffuser partitioning the inner space of the... | 05/15/2007 |
| 7217344 | Transparent conductive film for flat panel displays Substrates having films are used to produce flat panel displays and similar devices. Various embodiments of transparent conductive films and methods for the same for flat panel displays and similar devices are disclosed herein. ... | 05/15/2007 |
| 7214327 | Anisotropic dry etching of Cu-containing layers A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and et... | 05/08/2007 |
| 7213347 | Metering material to promote rapid vaporization Apparatus for vaporization of powdered or granular material, includes a container for holding powdered or granular material having at least one component; a vaporization structure; and a positive displacement mechanism spaced from the vaporization structure defining... | 05/08/2007 |
| 7214618 | Technique for high efficiency metalorganic chemical vapor deposition A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced int... | 05/08/2007 |
| 7210335 | Automated clamp-on sample chamber for flow porometry and a method of using same A sample chamber includes a movable upper chamber. The movable upper chamber includes a center bore opening to a bottom of the chamber, at least one port for introduction of gas under pressure to the center bore, and a first annular seal around the center bore. A st... | 05/01/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7208804 | Crystalline or amorphous medium-K gate oxides, Y0and Gd0 A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxi... | 04/24/2007 |
| 7208427 | Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦bâ‰... | 04/24/2007 |
| 7207101 | Wire processing apparatus A wire processing apparatus includes a microwave generator, a microwave transmitter, a waveguide coaxial converter and a wire insertion pipe, and the wire insertion pipe is disposed in the wireguide coaxial converter. In wire recycling process, after a tip end of a ... | 04/24/2007 |
| 7207763 | Semiconductor manufacturing system and wafer holder for semiconductor manufacturing system A semiconductor manufacturing system and wafer holder for a semiconductor manufacturing system which prevents a semiconductor wafer from being exposed to a process reaction and which includes a reaction tube for providing a sealed process space and a dual boat and w... | 04/24/2007 |
| 7208195 | Methods and apparatus for deposition of thin films A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the s... | 04/24/2007 |
| 7208196 | Epitaxial oxide films via nitride conversion The present invention relates to oxides on suitable substrates, as converted from nitride precursors. ... | 04/24/2007 |
| 7204886 | Apparatus and method for hybrid chemical processing A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body and a gas distribution assembly disposed on the chamber body. In one embodiment, the method comprises positioning a substrate su... | 04/17/2007 |
| 7205218 | Method including forming gate dielectrics having multiple lanthanide oxide layers A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A g... | 04/17/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7204019 | Method for repairing an apertured gas turbine component A method for repairing defects in a gas turbine component that comprises a substrate and an existing coating on the substrate. The article includes cooling holes having a predetermined air flow requirement and an outer shaped portion and an inner metering portion. T... | 04/17/2007 |
| 7205422 | Volatile metal β-ketoiminate and metal β-diiminate complexes Metal ketoiminate or diiminate complexes, containing copper, silver, gold, cobalt, ruthenium, rhodium, platinum, palladium, nickel, osmium, or indium, and methods for making and using same are described herein. In certain embodiments, the metal complexes described h... | 04/17/2007 |
| 7204885 | Deposition system to provide preheating of chemical vapor deposition precursors Chemical vapor deposition systems include elements to preheat reactant gases prior to reacting the gases to form layers of a material on a substrate, which provides devices and systems with deposited layers substantially free of residual compounds from the reaction ... | 04/17/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7201936 | Method of feedback control of sub-atmospheric chemical vapor deposition processes A method of film deposition in a sub-atmospheric chemical vapor deposition (CVD) process includes (a) providing a model for sub-atmospheric CVD deposition of a film that identifies one or more film properties of the film and at least one deposition model variable th... | 04/10/2007 |
| 7202185 | Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surfac... | 04/10/2007 |
| 7201937 | Methods for forming composite coatings on MEMS devices The present invention provides unique methods of coating and novel coatings for MEMS devices. In general a two step process includes the coating of a first silane onto a substrate surface followed by a second treatment with or without a second silane and elevated te... | 04/10/2007 |
| 7201942 | Coating method A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate sourc... | 04/10/2007 |
| 7202007 | Method of forming patterned films This method forms a patterned film. The method prepares a transfer member having a transfer surface on which asperities are formed in accordance with a film pattern to be formed, performs stripping treatment on surfaces of at least ridges formed on the transfer surf... | 04/10/2007 |
| 7202596 | Electron emitter and process of fabrication An electron emitter is formed by in situ growth from the vapor on catalyst clusters that are adhered by an adhesion layer to a conductive electrode. The emitter comprises hemispheroidal nanofiber clusters that emit electrons at low field strengths and high current d... | 04/10/2007 |
| 7201943 | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a secon... | 04/10/2007 |
| 7198855 | Methods of surface modification of a flexible substrate to enhance cell adhesion The present invention provides methods of producing a surface with enhanced cell-adhesive properties comprising applying a stress to a polymeric matrix. The strained matrix is then modified by grafting a self-assembled monolayer onto the strained matrix, with the se... | 04/03/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7198820 | Deposition of carbon- and transition metal-containing thin films A process depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each c... | 04/03/2007 |
| 7195641 | Valvular prostheses having metal or pseudometallic construction and methods of manufacture This invention relates to improvements in prosthetic cardiac and venous valves and implantable medical devices having moveable septa. The inventive prosthetic cardiac and venous valves have metallic or pseudometallic valves coupled to metallic or pseudometallic sten... | 03/27/2007 |
| 7195797 | High throughput high-yield vacuum deposition system A vacuum deposition system has been designed to produce thin film based demultiplexers with high throughput and production yields of greater than 25% for use in Dense Wavelength Division Multiplexer (DWDM) systems. The system employs a dense array of high yield fixt... | 03/27/2007 |
| 7195801 | Manufacturing process for storing and transferring evaporation material A manufacturing system capable of enhancing reliability and luminance of a light emitting element is provided which uses an EL material of very high purity in evaporation. The system is also capable of using an EL material efficiently. Instead of a glass jar, a cont... | 03/27/2007 |
