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| Number | Title | Issue Date |
| 8182869 | Method for controlling temperature of a mounting table A method for controlling a temperature of a mounting table includes a first and a second temperature control mode in which a first and a second coolant passageway of a coolant circulator are connected in parallel between an output port and a return port of the coola... | 05/22/2012 |
| 8178162 | Controlled deposition of silicon-containing coatings adhered by an oxide layer We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating f... | 05/15/2012 |
| 8168256 | Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copp... | 05/01/2012 |
| 8163338 | Precursor selection method for chemical vapor deposition techniques A method of precursor selection for thin film deposition is provided, that includes a group of precursors, using a rule-set for selecting one or more candidate precursors for thermal stability, high growth rate, and low contamination. Candidate geometries and consti... | 04/24/2012 |
| 8163337 | Vapour deposition method In a vapor deposition method which can be used to deposit mixtures of materials in progressively varying amounts on a substrate (1) and which can be used for a variety of purposes, but is of especial value in combinatorial chemistry, the path of the vaporized... | 04/24/2012 |
| 8163339 | Edge densification for film boiling process A method and apparatus are disclosed for improving densification of porous substrate using a film boiling process. In particular, the disclosed method and apparatus permit more complete densification of a substrate (i.e., densification closer to the surface of the s... | 04/24/2012 |
| 8158197 | Method for forming tantalum nitride film A tantalum nitride film-forming method comprises the steps, according to the CVD technique, of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(... | 04/17/2012 |
| 8158198 | Method for forming tantalum nitride film A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R... | 04/17/2012 |
| 8124179 | Thin films prepared with gas phase deposition technique A process for the preparation of thin films of an organic-inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) a... | 02/28/2012 |
| 8124178 | Method and apparatus application of metallic alloy coatings A directed vapor deposition (DVD) method and system for applying at least one bond coating on at least one substrate for thermal barrier coating systems. To overcome the limitations incurred by conventional methods, the DVD system uses an electron beam directed vapo... | 02/28/2012 |
| 8119197 | Metal mold for use in imprinting processes The invention relates to a novel metal mold having anti-adhesive properties comprising a base metal mold and an anti-adhesive layer comprising a fluorinated alkyl phosphoric acid derivative or a fluorinated alkyl poly-phosphoric acid derivative, including a phosphor... | 02/21/2012 |
| 8105648 | Method for operating a chemical deposition chamber A method for operating a chemical deposition chamber is disclosed. First, a digital liquid flow controller is provided to guide a precursor fluid into a chemical deposition chamber. Then, a pre-cleaning step is performed in the chemical deposition chamber. Later, a ... | 01/31/2012 |
| 8105647 | Method of forming oxide film and oxide deposition apparatus The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH | 01/31/2012 |
| 8092862 | Method for forming dielectric film and method for forming capacitor in semiconductor device using the same Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielec... | 01/10/2012 |
| 8092861 | Method of fabricating an ultra dielectric constant (K) dielectric layer A fabrication method of an ultra low-k dielectric layer is provided. A deposition process is performed, under the control of a temperature varying program or a pressure varying program, by reacting a dielectric matrix to form porous low-k dielectric layers with a gr... | 01/10/2012 |
| 8088440 | Hydrophobic coating including underlayer(s) deposited via flame pyrolysis A coated article is provided with a coating including at least one underlayer and a hydrophobic layer over at least the underlayer. The hydrophobic layer may have properties such as high contact angle θ. Hydrophobic properties of a multi-layer coating may be improv... | 01/03/2012 |
| 8084086 | Reliant thermal barrier coating system and related methods and apparatus of making the same A method and apparatus for forming a thermal barrier coating system (90) in communication with at least a portion of at least one substrate (92). The method includes: depositing a first bond coat (94) on at least a portion of at least one substr... | 12/27/2011 |
| 8080280 | Nanostructure templating using low temperature atomic layer deposition Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods compr... | 12/20/2011 |
| 8075952 | Power loading substrates to reduce particle contamination A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to r... | 12/13/2011 |
| 8075953 | Thin organic alignment layers with a batch process for liquid crystal displays A method to form alignment layers on a substrate of an LCD is disclosed. The substrate is placed in a vacuum chamber and undergoes a purging process. The purging process heats the substrates and removes water vapor from the vacuum chamber. Specifically, the vacuum c... | 12/13/2011 |
| 8071163 | Deposition of Ta- or Nb-doped high-k films Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as... | 12/06/2011 |
| 8071164 | Method for lubricating contacting surfaces A method is provided for tribological lubrication of sliding contact surfaces, where two surfaces are in contact and in motion relative to each other, operating in a vapor-phase environment containing at least one alcohol compound at a concentration sufficiently hig... | 12/06/2011 |
| 8071165 | Chemical vapor deposition method and system for semiconductor devices A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-li... | 12/06/2011 |
| 8067061 | Reaction apparatus having multiple adjustable exhaust ports A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports select... | 11/29/2011 |
| 8057854 | Surface treatment method for coated cutting insert A surface treatment method can perform coated surface treatment on a cutting edge R and a rake surface, while maintaining a radius of curvature of the cutting edge R and uniformly surface-treating the rake surface. The surface treatment method includes providing an ... | 11/15/2011 |
| 8053029 | Method for fabricating CuInSthin film by metal organic chemical vapor deposition, CuInSthin film fabricated by the same and method for fabricating InSthin film therefrom Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS | 11/08/2011 |
| 8048484 | Method for the deposition of a film by CVD or ALD Methods and apparatus for deposition of a film on a substrate in a reaction chamber by an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process include providing one or more reactants, and providing a volatile neutral coordinating ligand capable o... | 11/01/2011 |
| 8043659 | Substrate processing apparatus and substrate processing method A substrate processing method capable of controlling the internal pressure of a processing chamber to a high pressure and exhausting gases within the processing chamber at a high rate. The substrate processing method is for use in a substrate processing apparatus ha... | 10/25/2011 |
| 8039051 | Method and apparatus for hydrogenation of thin film silicon on glass A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at le... | 10/18/2011 |
| 8039052 | Multi-region processing system and heads The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processin... | 10/18/2011 |
| 8039049 | Treatment of low dielectric constant films using a batch processing system A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater ... | 10/18/2011 |
| 8039050 | Method and apparatus for strengthening a porous substrate A process is provided for strengthening a porous substrate. The process includes providing a substrate having intersecting fibers, where the intersecting fibers cooperate in the final substrate product to form an open pore network. Pathways are opened into the fibro... | 10/18/2011 |
| 8034407 | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium uppe... | 10/11/2011 |
| 8034409 | Methods, apparatuses, and systems for fabricating three dimensional integrated circuits The present invention pertains to methods, apparatuses, and systems for fabricating three-dimensional integrated circuits. One embodiment of the method comprises providing a wafer or other substrate having a plurality of through holes. In addition, the method includ... | 10/11/2011 |
| 8034406 | Integrated substrate processing in a vacuum processing tool A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer ... | 10/11/2011 |
| 8034408 | One-dimensional metal and metal oxide nanostructures Metal powder (such as tin, titanium, or tungsten powder) is heated in a flowing stream of an inert gas, such as argon, containing a small abundance of oxygen at a temperature to produce metal vapor. The metal reacts with the oxygen to form and deposit one-dimensiona... | 10/11/2011 |
| 8029858 | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first... | 10/04/2011 |
| 8029859 | Method of depositing Ge-Sb-Te thin film There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third pre... | 10/04/2011 |
| 8025922 | Enhanced deposition of noble metals The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on part... | 09/27/2011 |
| 8017184 | β-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one... | 09/13/2011 |
