Bizarre Patents
Ballistic resistant body covering
A ballistic resistant body covering for protecting the torso, groin and neck area from ballistic missiles.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8187563 | Method for producing Si bulk polycrystal ingot A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high yield. An upper face of a Si melt is locally cooled by bringing coolant c... | 05/29/2012 |
| 8043593 | Nanoscale crystalline silicon powder An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, ... | 10/25/2011 |
| 8038973 | High purity silicon production system and production method The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more ... | 10/18/2011 |
| 8017099 | Method for producing polycrystalline silicon, and facility for producing polycrystalline silicon A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiHnCl4-n, wherein n is 0 to 4) containing silicon tetrachloride, and a polymer ... | 09/13/2011 |
| 7955583 | Metallic silicon and method for manufacturing the same This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon i... | 06/07/2011 |
| 7955582 | Method for producing crystallized silicon as well as crystallized silicon A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone,... | 06/07/2011 |
| 7931883 | Silicon feedstock for solar cells The silicon feedstock for solar cells is made from metallurgical grade silicon by the successive steps of treating the silicon with a calcium-silicate slag, solidifying the treated silicon, leaching the solid silicon with acid, remelting the leached silicon, resolid... | 04/26/2011 |
| 7927571 | Method and device for producing high purity polycrystalline silicon with a reduced dopant content In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-conta... | 04/19/2011 |
| 7922989 | Method for making silicon for solar cells and other applications A method for preparation of high purity silicon suitable for photovoltaic cells using reduction of silica, which is pre-purified in an aqueous solution, in presence of a reducing agent, preferably carbonaceous agent, where the pre-purified silica has a low amount of... | 04/12/2011 |
| 7771687 | Method for preparing granular polycrystalline silicon using fluidized bed reactor The present invention relates to a method for mass preparation of granular polycrystalline silicon in a fluidized bed reactor, comprising (a) a reactor tube, (b) a reactor shell encompassing the reactor tube, (c) an inner zone formed within the reactor tube, where a... | 08/10/2010 |
| 7758839 | Silicon and method for producing the same Method for producing silicon which is suitable as a starting material for producing a silicon melt for the fabrication of silicon blocks or silicon crystals, comprising the following steps: introducing a gaseous mixture of monosilane and hydrogen into a reactor, the... | 07/20/2010 |
| 7704478 | Method and apparatus for refining silicon using an electron beam A method and apparatus for refining silicon which can remove impurity elements such as phosphorus and antimony as well as impurity elements such as boron and carbon using an electron beam in the same vacuum chamber are provided. Silicon is irradiated and melted with... | 04/27/2010 |
| 7682585 | Silicon refining process Nitrogen and aluminum and fluxing agents (Al2O3, SiO2, CaO and MgO) are added to molten silicon to create an oxy-nitride slag that acts as a sink for dissolved boron and phosphorus. The nitrogen can be added by bubbling nitrogen gas ... | 03/23/2010 |
| 7625541 | Method for purifying silicon and silicon The invention provides a method for purifying silicon which comprises a step of blowing a treating gas generated by reacting carbon with an oxidized gas into a molten silicon, as well as silicon produced by the method. Carbon can be held in a container, the oxidized... | 12/01/2009 |
| 7572425 | System and method for producing solar grade silicon A starting material including silica and carbon is heated to form an intermediate material. The intermediate material includes silica and silicon carbide. The intermediate material is reacted to form silicon. At least some of the emissions that are generated by heat... | 08/11/2009 |
| 7569202 | Silicon nanosponge particles Silicon nanosponge particles prepared from a metallurgical grade silicon powder having an initial particle size ranging from about 1 micron to about 4 microns is presented. Each silicon nanosponge particle has a structure comprising a plurality of nanocrystals with ... | 08/04/2009 |
| 7560085 | Porous silicon particles Porous silicon particles are prepared from a metallurgical grade silicon powder having an initial particle size greater than about 1 micron is presented. Each porous silicon particle comprises a solid core surrounded by a porous silicon layer having a thickness grea... | 07/14/2009 |
| 7531155 | Method of producing silicon nanoparticles from stain-etched silicon powder The present invention is for a porous silicon powder comprising silicon particles wherein the outermost layers of said particles are porous. The present invention is also directed to a method of making this porous silicon powder using a stain etch method. The presen... | 05/12/2009 |
| 7429369 | Silicon nanoparticle nanotubes and method for making the same A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon nanoparticles. The substrate surface is completely immersed in the solution in... | 09/30/2008 |
| 7404941 | Medium purity metallurgical silicon and method for preparing same The invention concerns a method for producing a medium purity silicon comprising: preparing, by carbothermic reduction of silica in a submerged arc-furnace a silicon with low boron content; refining the liquid silicon with oxygen or chlorine; treating the refined si... | 07/29/2008 |
| 7371666 | Process for producing luminescent silicon nanoparticles A process for producing brightly photoluminescent silicon nanoparticles with an emission spanning the visible spectrum is disclosed. In one aspect, the process involves reacting a silicon precursor in the presence of a sheath gas with heat from a radiation beam unde... | 05/13/2008 |
| 7332441 | Passivation of porous semiconductors A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are... | 02/19/2008 |
| 7332431 | Method of manufacturing semiconductor device In a semiconductor device having a semiconductor film crystallized by using a metal element, it is an object to provide a technique for reducing the crystal defects in a semiconductor film, and a technique for forming a semiconductor film with high crystallinity by ... | 02/19/2008 |
| 7300858 | Laser crystallization and selective patterning using multiple beamlets A process and system for processing a thin film sample, as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each irradiation beam pulse may ... | 11/27/2007 |
| 7294324 | Low basal plane dislocation bulk grown SiC wafers A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 50... | 11/13/2007 |
| 7273647 | Silicon annealed wafer and silicon epitaxial wafer A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 | 09/25/2007 |
| 7272942 | Method and system for purifying exhaust gas The invention relates to a method and system for purifying exhaust gas, especially a solvent-containing exhaust gas from refrigerator recycling, wherein the dried, pressurized exhaust gas is cryogenically condensed, the condensed components are separated from the re... | 09/25/2007 |
| 7259101 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7259100 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7235811 | Thin film structure from LILAC annealing A system and method are provided for reducing film surface protrusions in the fabrication of LILAC films. The method comprises: forming an amorphous film with a first thickness; annealing the film using a LILAC process, with beamlets having a width in the range of 3... | 06/26/2007 |
| 7220308 | Manufacturing method of high resistivity silicon single crystal To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high r... | 05/22/2007 |
| 7214267 | Silicon single crystal and method for growing silicon single crystal A silicon single crystal and a method for growing a silicon single crystal are provided. A p-type silicon single crystal is grown with a uniform resistivity value in a pulling direction. Pulling is conducted by the Czochralski method from molten silicon obtained by ... | 05/08/2007 |
| 7215456 | Method for patterning self-assembled colloidal photonic crystals and method for fabricating 3-dimensional photonic crystal waveguides of an inverted-opal structure using the patterning method A method for patterning self-assembled colloidal photonic crystals and a method for fabricating three-dimensional photonic crystal waveguides having an inverted-opal structure using the patterning method. The patterning method includes depositing first and second co... | 05/08/2007 |
| 7210516 | Casting apparatus and method therefor A casting apparatus including a die that contains a molten metal that is poured via an opening section disposed above the die. The casting apparatus also includes a heater disposed above the die, and a gas supplying structure for supplying an inter gas to a surface ... | 05/01/2007 |
| 7204963 | Process for the separation of chlorosilanes from gas streams Chlorosilanes are continuously removed from a gas stream in an apparatus in which the gas stream is treated in a first stage with water vapor in the gas phase, and in a second stage with a liquid, aqueous phase. ... | 04/17/2007 |
| 7175685 | Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications A bulk silicon material for making silicon ingots, consisting of silicon pellets, and a method for making the pellets from an agglomerate-free source of high purity silicon powder by feeding a controlled amount of silicon powder that is free of intentional additives... | 02/13/2007 |
| 7125608 | Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby... | 10/24/2006 |
| 7112545 | Passivation of material using ultra-fast pulsed laser The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer. ... | 09/26/2006 |
| 7112548 | Artificial ore and coating material or refractory block containing the artificial ore An artificial ore, characterized in that it is prepared by melting one of silicon, a silicon compound, tourmaline and a ceramic, and adding iron, aluminum and calcium into the resultant melt to melt them, followed by cooling to a mass. The artificial core has good t... | 09/26/2006 |
| 7078357 | Method for manufacturing silicon wafer and silicon wafer There are provided a heat-treating method capable of both increasing BMD density and widening DZ layer width, and a silicon wafer having DZ layer width wider compared with a conventional one regardless of high BMD density. In the method, heat treatment (RTA treatmen... | 07/18/2006 |
