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| Number | Title | Issue Date |
| 8163261 | System and method for making SiHand higher silanes A method for making a higher silane from a lower silane comprises heating a lower silane containing stream without exposing it to temperatures more than 20° C. more than the maximum temperature of a first reaction temperature range. The heated lower silane containi... | 04/24/2012 |
| 8147789 | Composition comprising neopentasilane and method of preparing same A composition comprising at least 93% (w/w) neopentasilane; and a method of preparing neopentasilane, the method comprising treating a tetrakis-(trihalosilyl)silane with diisobutylaluminum hydride. ... | 04/03/2012 |
| 8092770 | Polysilazane thermosetting polymers for use in chromatographic systems and applications This invention relates to an amorphous non-glassy ceramic composition that may be prepared by curing, calcining and/or pyrolyzing a precursor material comprising silicon, a Group III metal, a Group IVA metal, and/or a Group IVB metal. ... | 01/10/2012 |
| 8088350 | Polysilazane thermosetting polymers for use in chromatographic systems and applications This invention relates to an amorphous non-glassy ceramic composition that may be prepared by curing, calcining and/or pyrolyzing a precursor material comprising silicon, a Group III metal, a Group IVA metal, and/or a Group IVB metal. ... | 01/03/2012 |
| 8048846 | Protein-silane/siloxane copolymers, their preparation and their use The present invention provides a protein-silane and/or protein-siloxane copolymer obtainable by reacting a protein and a silane compound, the relative amounts of the protein and the silane compound being such that in the range of from 0.1 to 0.4 silane molecule is p... | 11/01/2011 |
| 8038972 | Higher order silane composition, method for manufacturing film-coated substrate, electro-optical device and electronic device A higher order silane composition, includes: a higher order silane compound; and a solvent containing one of a substituted hydrocarbon based solvent and an unsubstituted hydrocarbon based solvent. As the solvent, a solvent having a refractive index of 1.53 or more i... | 10/18/2011 |
| 7906094 | Method for producing a high purity trisilane product from the pyrolysis of disilane Methods for the production of trisilane from the pyrolysis of disilane in a single reactor. ... | 03/15/2011 |
| 7323155 | Method for producing silanes The invention relates to a method of producing silane or hydrochlorosilanes by disproportionation of a higher chlorinated hydrochlorosilane or a mixture of said hydrochlorosilanes in the presence of a catalyst. Before the catalyst is used, it is a) washed with hyper... | 01/29/2008 |
| 7314513 | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA a... | 01/01/2008 |
| 7282738 | Fabrication of crystalline materials over substrates A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline mater... | 10/16/2007 |
| 7261768 | Hydrophobic coatings and methods Liquid coating solutions impart hydrophobicity to substrate surfaces (e.g., glass) and include a silane, preferably octadecyltrichlorosilane (OTS), dissolved in a liquid paraffinic solvent. Preferred liquid paraffinic solvents are normal (straight chain) liquid parr... | 08/28/2007 |
| 7259100 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7259101 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 08/21/2007 |
| 7253084 | Deposition from liquid sources A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid tr... | 08/07/2007 |
| 7186630 | Deposition of amorphous silicon-containing films Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, hig... | 03/06/2007 |
| 7078364 | Ship-in-a-bottle catalysts In accordance with the present invention there is provided a novel catalyst system in which the catalytic structure is tailormade at the nanometer scale using the invention's novel ship-in-a-bottle synthesis techniques. The invention describes modified forms of soli... | 07/18/2006 |
| 7078276 | Nanoparticles and method for making the same A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanopar... | 07/18/2006 |
| 7056484 | Method for producing trichlorosilane The invention relates to a method for producing trichlorosilane by reacting silicon with hydrogen, silicon tetrachloride and, optionally, hydrogen chloride, whereby the silicon is provided in comminuted form, and the silicon is mixed with a catalyst during comminuti... | 06/06/2006 |
| 7012030 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liab... | 03/14/2006 |
| 6942844 | Method and facility for producing silane Silane is produced in a continuous process by disproportionating trichlorsilane in at least 2 recreation areas for reaction/distillation, which are run through by a countercurrent of steam and liquid in the presence of catalytically active solid under a pressure whi... | 09/13/2005 |
| 6932954 | Method for producing silicon A silicon production process which improves the production efficiency of trichlorosilane while an industrially advantageous output is ensured and the amount of the by-produced tetrachlorosilane is suppressed. This process does not require a bulky reduction apparatus... | 08/23/2005 |
| 6905576 | Method and system for producing silane This invention relates to a continuous process for the preparation of silane by catalytic disproportionation of trichlorosilane in a reactive/distillative reaction zone having a catalyst bed of catalytically active solid. ... | 06/14/2005 |
| 6858196 | Method and apparatus for chemical synthesis An apparatus is provided for synthesis and collection of higher order chemical compounds from lower order precursors. The apparatus includes a first silent electric discharge reactor configured to synthesize an intermediate product (e.g., disilane) from a precursor ... | 02/22/2005 |
| 6852301 | Method for producing silane The invention relates to a method for producing silane (SiH4) by a) reacting metallurgical silicon with silicon tetrachloride (SiCl4) and hydrogen (H2), to form a crude gas stream containing trichlorosilane (SiHCl3) and si... | 02/08/2005 |
| 6733734 | Materials and methods for the purification of hydride gases Regenerable gas purifier materials are provided capable of reducing the level of contaminants such as oxygen and moisture in a hydride gas stream to parts-per-billion levels or sub-parts-per-billion levels. The purifier materials of this invention comprise a thin la... | 05/11/2004 |
| 6723421 | Semiconductor with coordinatively irregular structures A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concen... | 04/20/2004 |
| 6660238 | Preparation and purification of diborane BF3 CO2 or both are removed from a mixture containing these gases with B2 H6 by contacting the mixture with an inorganic hydroxide such as LiOH. B2 H6 is synthesized by contacting BF3... | 12/09/2003 |
| 6503570 | Cyclosilane compound, and solution composition and process for forming a silicon film Silylcyclopentasilane and a solution composition for forming a silicon film containing the same, which is used for forming a silicon film on the surface of a substrate. There is also disclosed spiro[4.4] nonasilane.... | 01/07/2003 |
| 6482381 | Method for hydrogenating halogen-substituted silicon compounds Halogen-substituted silicon compounds are hydrogenated by reaction with hydrogen in a chloroaluminate salt melt as a reaction medium containing a finely divided metal capable of forming interstitial hydrides which are suspended in the melt, the finely div... | 11/19/2002 |
| 6284317 | Derivatization of silicon surfaces The present invention relates to methods of derivatizing semiconductor surfaces, particularly porous silicon surfaces with silicon-carbon units. The derivatization occurs through the direct addition of an organometallic reagent in the absence of an extern... | 09/04/2001 |
| 6174349 | Continuous effluent gas scrubber system and method A method and apparatus is provided which continuously filters scrubbed gases prior to emission to the atmosphere. In particular, the method and apparatus can continuously scrub the effluent stream from a chemical vapor deposition process, such as the proc... | 01/16/2001 |
| 6165434 | Purification of diborane BF3, CO2 or both are removed from a mixture containing these gases with B2 H6 by contacting the mixture with an inorganic hydroxide such as LiOH. B2 H6 is synthesized by contacting BF3... | 12/26/2000 |
| 6087580 | Semiconductor having large volume fraction of intermediate range order material A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the... | 07/11/2000 |
| 6060021 | Method of storing trichlorosilane and silicon tetrachloride Trichlorosilane for producing polycrystal silicon and tetrachlorosilane for producing trichlorosilane are storaged under hydrogen gas as a sealing gas. High-purity polycrystal silicon is provided.... | 05/09/2000 |
| 6027705 | Method for producing a higher silane A method for producing tri- or higher-silane from mono- or lower-silane characterized by reacting a lower silane in the first reaction zone and reacting a portion or all of the reaction product thereof in a reaction zone of the second or subsequent reacti... | 02/22/2000 |
| 6013235 | Conversion of direct process high-boiling residue to monosilanes A process for the production of monosilanes from the high-boiling residue resulting from the reaction of hydrogen chloride with silicon metalloid in a process typically referred to as the "direct process." The process comprises contacting a high-boiling r... | 01/11/2000 |
| 5707568 | Preparation of substantially polycrystalline silicon carbide fibers from methylpolysilanes A process for the preparation of substantially polycrystalline silicon carbide fibers is provided. The fibers may be fabricated to have a small diameter and are thermally stable at high temperatures. The process is carried out by initially forming fibers ... | 01/13/1998 |
| 5543127 | Dilute solution of a hydride in liquid nitrogen A solution of hydride in liquid nitrogen, the hydride being one that is in gaseous phase at atmospheric pressure and ambient temperature. The concentration of hydride in the liquid nitrogen is comprised between 0.05 and 10 mol %, preferably between 0.05 a... | 08/06/1996 |
| 5462723 | Aqueous hydrides and method of manufacture therefore Aqueous hydrides including a metal, a metal hydroxide and water and a method of manufacture therefor are provided. The method includes a reaction which does not require precise stoichiometric proportions of metal, alkali hydroxide and water. The specific ... | 10/31/1995 |
| 5422088 | Process for hydrogenation of tetrachlorosilane An improved process for contacting hydrogen gas and tetrachlorosilane in a reactor comprising a pressurizable shell having located therein a reaction vessel forming a substantially closed inner chamber for reacting the hydrogen gas with the tetrachlorosil... | 06/06/1995 |
