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| Number | Title | Issue Date |
| 8121170 | Gain-coupled distributed feedback semiconductor laser including first-order and second-order gratings A gain-coupled distributed feedback (DFB) semiconductor laser includes a grating formed by grooves through at least a part of an active region of a laser cavity. The DFB laser may be configured with a substantially pure gain-coupled grating and may be configured to ... | 02/21/2012 |
| 8014434 | Multiple cavity etched-facet DFB lasers A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the ph... | 09/06/2011 |
| 7953135 | Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency A vertical cavity surface emitting laser diode (VCSEL) is disclosed, which reduces the light scattering by the step formed at the interface between the dielectric DBR and the semiconductor that reflects the mesa shape of the tunnel junction. The dielectric DBR of th... | 05/31/2011 |
| 7933304 | Semiconductor laser diode and optical module employing the same It is an object of the present invention to realize a low cost laser light source capable of emitting several mW optical power while the operation current is reduced. In particular, the present invention concerns a 1.3 μm wavelength band laser device suitable for s... | 04/26/2011 |
| 7856045 | Surface emitting semiconductor component A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generatio... | 12/21/2010 |
| 7848380 | Method and apparatus for modifying out of band reflection for a laser element A method and apparatus for modifying the out of band reflection of a laser element is described. The laser element includes an active medium excited by optical pumping means to produce stimulation emission of light. The laser element further includes a Bragg grating... | 12/07/2010 |
| 7835418 | Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of... | 11/16/2010 |
| 7756187 | Optical device including multilayer reflector and vertical cavity surface emitting laser Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not λ/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a... | 07/13/2010 |
| 7720128 | Laser diode generating passive mode and method of creating optical pulse using the same diode Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sect... | 05/18/2010 |
| 7668223 | Integrated photonic semiconductor devices and methods for making integrated photonic semiconductors devices A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling high... | 02/23/2010 |
| 7664158 | Two-dimensional photonic crystal surface-emitting laser A two-dimensional photonic crystal formed by arranging in a lattice pattern a medium having a refractive index different from that of a medium layer formed near an active layer. The two-dimensional photonic crystal includes a distributed-feedback control photonic cr... | 02/16/2010 |
| 7609744 | Laser resonator comprising an internal beam splitter A simple and compact laser resonator is proposed which makes it possible to symmetrically operate a gain medium, preferably a semiconductor, which possesses more than one channel of emission. As a result higher output powers and/or better beam qualities and/or bette... | 10/27/2009 |
| 7606284 | Semiconductor laser structure including quantum dot Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second... | 10/20/2009 |
| 7593448 | Semiconductor laser module and optical transmission apparatus using the semiconductor laser module A semiconductor laser module includes a distributed-feedback laser. When a predetermined transmission loss, a predetermined number of channels, and a predetermined modulation factor per channel are given, a cavity length of the distributed-feedback laser satisfies a... | 09/22/2009 |
| 7586970 | High efficiency partial distributed feedback (p-DFB) laser A second-order multi-mode partial distributed feedback (p-DFB) laser having increased electrical-to-optical power conversion efficiency, stabilized wavelength and narrowed emission linewidth. The laser includes an abbreviated grating housed in the laser cavity that ... | 09/08/2009 |
| 7573931 | Vertical-cavity surface-emitting laser including a supported airgap distributed bragg reflector A vertical-cavity surface-emitting laser incorporating a supported air gap distributed Bragg reflector is disclosed. The supported air gap DBR includes a regrowth layer of material that provides mechanical support for the original material layers. The supported air ... | 08/11/2009 |
| 7564889 | Adiabatically frequency modulated source A Distributed Feed-Back (DFB) laser integrated with an Electroabsorption (EA) modulator whose facet at the end of EA modulator section has finite reflectively to create adiabatic chirp by optical feedback to the DFB laser. ... | 07/21/2009 |
| 7551662 | Distributed feedback (DFB) quantum dot laser structure A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating struc... | 06/23/2009 |
| 7542503 | Distributed feedback laser with improved optical field uniformity and mode stability A directly modulated distributed feedback (DFB) laser with improved optical field uniformity and mode stability may include a laser cavity and a distributed reflector and/or external reflectors. The distributed reflector may be a Bragg grating and may extend asymmet... | 06/02/2009 |
| 7457341 | Low loss grating for high efficiency wavelength stabilized high power lasers A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, to... | 11/25/2008 |
| 7440643 | Variable light controlling device and variable light controlling method A variable light controlling device comprising a substrate, an optical waveguide disposed on the substrate, a first heater and a second heater to change the optical waveguide's temperature is fabricated. And a total amount of the power supplied to the first and the ... | 10/21/2008 |
| 7421003 | Emission wavelength-programmable organic distributed feedback laser An organic distributed feedback layer, which comprises a resonator in a double layer structure comprising a photo-induced mass transfer material layer and an organic fluorescence layer, provided as an under layer below the former layer, where the photo-induced mass ... | 09/02/2008 |
| 7418014 | Surface-emitting type semiconductor laser, and method for manufacturing the same, optical switch, and optical branching ratio variable element A surface-emitting type semiconductor laser includes a substrate, a first distributed Bragg reflection type mirror formed above the substrate, an active layer formed above the first mirror, a second distributed Bragg reflection type mirror formed above the active la... | 08/26/2008 |
| 7411992 | Light wavelength converting apparatus, control method of the same, and image projecting apparatus using the same A light wavelength converting apparatus includes a semiconductor laser having gain, phase, and DBR regions, a nonlinear optical device for receiving fundamental-wave light emitted from the semiconductor laser and outputting second harmonic wave light, a first optica... | 08/12/2008 |
| 7394838 | Control for a tunable laser A control (20) and a method of controlling a tunable laser having a gain section (4), a phase change section (5) and a segmented Bragg grating reflector section (6) comprising a series of grating units (9-17) each of a diffe... | 07/01/2008 |
| 7376309 | Optical structure An optical structure comprising an optical resonator is provided. The optical resonator comprises a first set of nested closed optical regions, forming a distributed feedback resonator structure with a direction of radially alternating optical refractive index, and ... | 05/20/2008 |
| 7376161 | Modulation light source, image display apparatus including the same, and method of driving modulation light source A modulation light source capable of maintaining thermal stability of a gain part is provided. A modulation light source includes a DBR laser having a DBR part, a phase part and a gain part, a light wavelength conversion device that receives a fundamental wave from ... | 05/20/2008 |
| 7372886 | High thermal conductivity vertical cavity surface emitting laser (VCSEL) A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to genera... | 05/13/2008 |
| 7373025 | Waveguide-type optical device In the present invention, for example with regards to a Mach-Zehnder type LN modulator which uses a Z-cut LN substrate, by providing a step by forming an etching part on the surface of the LN substrate, and forming an optical waveguide so as to position a pair of br... | 05/13/2008 |
| 7370789 | Variable field-of-view gradient coil system for magnetic resonance imaging The present invention relates to a gradient coil system for magnetic resonance imaging (MRI) systems and to a magnetic resonance imaging (MRI) system comprising such a gradient coil system. Magnetic resonance imaging systems comprise at least a main magnet system, a... | 05/13/2008 |
| 7368763 | Semiconductor device and manufacturing method thereof A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part a... | 05/06/2008 |
| 7369588 | Broad-band optical semiconductor device and a method for manufacturing the same Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active laye... | 05/06/2008 |
| 7369242 | Cavity ring-down spectrometer for semiconductor processing An apparatus is provided for measuring a gas within a semiconductor thin film process. The apparatus includes an optical resonator disposed within an environment of the thin-film process, a tunable laser that excites the optical resonator at a characteristic frequen... | 05/06/2008 |
| 7368316 | Surface-emission semiconductor laser device A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to... | 05/06/2008 |
| 7369583 | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer A device contains at least one wavelength-tunable element controlled by an applied voltage and at least two resonant cavities, where the resonant wavelength of the tunable element is preferably elecrooptically tuned using the quantum confined Stark effect around the... | 05/06/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7366385 | Tunable fiber amplifier and laser The present invention has a core and at least one cladding, where, by changing the temperature of the cladding, the material dispersion characteristic of the cladding is changed and a refractive index is varied to make fundamental-mode cutoff tunable as well; and th... | 04/29/2008 |
| 7366217 | Optimizing mirror reflectivity for reducing spontaneous emissions in photodiodes An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirro... | 04/29/2008 |
| 7366220 | Tunable laser A tunable laser includes an optical waveguide alternately including a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating. The diffraction grating includes a gain diffraction grating and a wavelength controlling diffracti... | 04/29/2008 |
| 7359421 | Red light laser A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity... | 04/15/2008 |
