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| Number | Title | Issue Date |
| 8175131 | Laser media with controlled concentration profile of active laser ions and method of making the same A laser medium comprises a solid-state host material and dopant species provided within the solid-state host material. A first portion of the dopant species has a first valence state, and a second portion of the dopant species has a second valence state. In an embod... | 05/08/2012 |
| 7894501 | Laser device and optical amplifier Laser light emission across a wide bandwidth emission spectrum is enabled in a laser device equipped with solid gain media. The laser device is equipped with: a resonator; a plurality of solid gain media, having fluorescent spectra that at least partially overlap wi... | 02/22/2011 |
| 7817700 | Laser light source device and manufacturing method for manufacturing laser light source device A manufacturing method for manufacturing a laser light source device, includes: providing a first laser element having a first emitter, a second laser element having a second emitter, and a reflection member; adjusting a relative angle between the first laser elemen... | 10/19/2010 |
| 7796669 | Semiconductor laser diode A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an ... | 09/14/2010 |
| 7778304 | Measuring arrangement and measuring system A measuring arrangement comprises a radiation device (SE), having at least one first surface emitting semiconductor component (1) with a vertical emission direction, a detection device (DE) for detecting reflected radiation, and an evaluation circuit (AS), se... | 08/17/2010 |
| 7602831 | Semiconductor laser device having an insulation region A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed... | 10/13/2009 |
| 7535947 | Enhanced beam quality from a laser rod using interstitial dopants A laser rod is provided having a tailored gain profile such that the quality of the output beam is enhanced. The laser rod has a concentration of dopant ions having a first valence that is relatively high at the center of the rod and decreases to the surface of the ... | 05/19/2009 |
| 7430230 | Tube solid-state laser An improved tube solid-state laser (SSL) is provided utilizing diode pumping, microchannel cooling, optics, and/or new coating and bonding processes. In one example, an amplifier module for the SSL includes a tube of laser gain material, a first substrate and a seco... | 09/30/2008 |
| 7408968 | Semiconductor laser device and method for fabricating the same A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a fir... | 08/05/2008 |
| 7408970 | Optically pumped external-cavity semiconductor laser with multiple gain structures A laser-resonator terminated by two end mirrors is folded by a plurality of OPS-structures and a plurality of fold-mirrors. The OPS-structures are energized by focused radiation from diode-laser bars. The fold-mirrors are configured and arranged with respect to the ... | 08/05/2008 |
| 7382817 | V-coupled-cavity semiconductor laser A semiconductor laser comprises two optical cavities, each comprising an optical waveguide bounded by two partially reflecting elements. The two optical waveguides are disposed on a substrate to form a substantially V-shaped geometry with substantially no cross-coup... | 06/03/2008 |
| 7374959 | Two-wavelength semiconductor laser device and method of manufacturing the same A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second ... | 05/20/2008 |
| 7356066 | Solid state laser A solid body laser has a crystal disk forming its laser active medium. A flat side of the crystal disk is totally reflecting. A resonator mirror configuration includes a partially transparent end mirror and one or more folding mirrors, which are disposed with spatia... | 04/08/2008 |
| 7352789 | Laser light irradiation apparatus and laser light irradiation method Laser light is emitted from a laser oscillator, and the laser light is made to enter a beam expander optical system including a concave lens through a correction lens. The laser oscillator, the correction lens and the concave lens are disposed so that, when an emiss... | 04/01/2008 |
| 7339960 | Optical device, laser beam source, laser apparatus and method of producing optical device After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is fo... | 03/04/2008 |
| 7336690 | Solid-state laser system A simple and high-reliability constitution provides a solid-state laser system that allows a high-output, long-pulse-width laser beam to be obtained. A solid-state laser system that includes a solid-state laser medium 1, a light source 2 for pum... | 02/26/2008 |
| 7333735 | Communication using VCSEL laser array Ultrafast directional beam switching, using coupled VCSELs is combined with a light modulator to provide information transfer at bit rates of tens of GHz. This approach is demonstrated to achieve beam switching frequencies of 32-50 GHz in some embodiments and direct... | 02/19/2008 |
| 7327768 | Wavelength conversion module A wavelength conversion module according to the present invention includes an external resonator, a semiconductor laser module and a wavelength conversion device for converting a wavelength of light output from the semiconductor laser module into a shorter wavelengt... | 02/05/2008 |
| 7310358 | Semiconductor lasers Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot... | 12/18/2007 |
| 7286576 | Pulse laser arrangement and method for setting pulse length for laser pulses The object of a pulsed laser arrangement and a method for adjusting the pulse length of laser pulses is to change the pulse length over a wide range substantially independent from the laser output power, in particular to counteract a reduction in output and to preve... | 10/23/2007 |
| 7280569 | Electro-optical modulator module for COlaser Q-switching, mode-locking, and cavity dumping Various electro-optical modulator module designs are presented, which can provide for uniform, symmetric, and efficient heat removal for mode-locking, Q-switching, and/or cavity dumping operations. Heat can be uniformly extracted from an EO crystal without imposing ... | 10/09/2007 |
| 7280570 | Device for generating a light beam including multiple wavelengths A device for generating a light beam having several wavelengths includes a beam recombiner arrangement for recombining several laser light beams having different wavelengths. The beam recombiner arrangement includes several individual beam recombiners arranged in a ... | 10/09/2007 |
| 7280577 | Pumping method for laser equipment Laser equipment in which pumping every dependence of output beam diameter and beam wavefront curvature is reduced. The total pumping energy of at least one of laser active media disposed beyond terminal laser beam waists, among beam waists, is approximately one-half... | 10/09/2007 |
| 7260127 | Dual layer color-center patterned light source A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of c... | 08/21/2007 |
| 7260132 | Semiconductor laser apparatus A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of t... | 08/21/2007 |
| 7254152 | Optically pumped active mirror with improved performance and reduced parasitics A system and a method for providing more gain while minimizing the potential for parasitic oscillation and amplified spontaneous emissions in an optically pumped optical amplifier or laser system, utilizing a partitioned monolithic gain element. The monolithic gain ... | 08/07/2007 |
| 7235816 | Semiconductor light emitter A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier la... | 06/26/2007 |
| 7224710 | Optically pumped semiconductor laser apparatus An optically pumped semiconductor laser apparatus having a vertical emitter (2) and having one pump laser (5) for optically pumping the vertical emitter (2), with the vertical emitter (2) and the pump laser (5) being monolithically... | 05/29/2007 |
| 7218660 | Single-mode vertical cavity surface emitting lasers and methods of making the same In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure in... | 05/15/2007 |
| 7215696 | Electrically pumped semiconductor active mirror with improved performance and reduced parasitics A system and a method for providing more gain while minimizing the potential for parasitic oscillation and amplified spontaneous emissions in an electrically pumped optical amplifier or laser system, utilizing a partitioned monolithic gain element. The monolithic ga... | 05/08/2007 |
| 7209506 | Optically pumped semiconductor device and method for producing it An optically pumped radiation-emitting semiconductor device with a surface-emitting quantum well structure (10), which has at least one quantum layer (11), and an active layer (8) for generating pump radiation (9) for optically pumping th... | 04/24/2007 |
| 7203218 | Solid-state laser device A solid-state laser device, comprising two or more resonators for outputting laser beams on a same axis, a first light emitter and a second light emitter for entering excitation light to each of the resonators, a photodetector for monitoring which monitors the outpu... | 04/10/2007 |
| 7199398 | Nitride semiconductor light emitting device having electrode electrically separated into at least two regions A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated in... | 04/03/2007 |
| 7197059 | Short wavelength diode-pumped solid-state laser A diode-pumped solid-state laser including a short wavelength (e.g., blue, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A ... | 03/27/2007 |
| 7194014 | Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the semiconductor laser module A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a sid... | 03/20/2007 |
| 7184456 | Dual wavelength semiconductor laser emitting apparatus and manufacturing method thereof A dual wavelength semiconductor laser emitting apparatus including a substrate having a first laser emitting device and a second laser emitting device, and a manufacturing method thereof are provided. The manufacturing method includes stacking an active layer of the... | 02/27/2007 |
| 7170919 | Diode-pumped solid-state laser gain module A laser gain device (10) holds a laser slab (60) which is pumped by pump energy from at least one diode array assembly (24). An angle at which pump energy from the diode array assembly (24) impinges the laser slab (60) is adjustabl... | 01/30/2007 |
| 7158555 | Solid-state laser device using two resonators on the same axis and dual monitors A solid-state laser device, which comprises a first resonator for projecting a first laser beam and a second resonator for projecting a second laser beam, wherein the first resonator and the second resonator commonly share a part of an optical axis and an output mir... | 01/02/2007 |
| 7158546 | Composite laser rod, fabricating method thereof, and laser device therewith As a composite laser rod capable of satisfying the positional stability and output stability of a laser beam, a laser rod in which a laser active element is doped is intimately inserted into a hollow portion of a non-doped ceramic pipe that has a crystal structure t... | 01/02/2007 |
| 7145183 | Method for producing a vertically emitting laser The invention is directed to a vertically emitting laser and a method of manufacturing such a laser having a current aperture and a semiconductor relief. The semiconductor relief and the current aperture are defined in the same processing operation, thereby causing ... | 12/05/2006 |
