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| Number | Title | Issue Date |
| 7830940 | Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride semiconductor layer having portions with different film thicknesses A nitride semiconductor laser element comprises a nitride semiconductor substrate and a nitride semiconductor layer laminated thereon, wherein the nitride semiconductor substrate has a high dislocation density region and a low dislocation density region containing l... | 11/09/2010 |
| 7804871 | Semiconductor laser A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal directio... | 09/28/2010 |
| 7778299 | Semiconductor laser A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and la... | 08/17/2010 |
| 7756180 | Semiconductor laser A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal directio... | 07/13/2010 |
| 7408968 | Semiconductor laser device and method for fabricating the same A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a fir... | 08/05/2008 |
| 7397834 | Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surfac... | 07/08/2008 |
| 7369583 | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer A device contains at least one wavelength-tunable element controlled by an applied voltage and at least two resonant cavities, where the resonant wavelength of the tunable element is preferably elecrooptically tuned using the quantum confined Stark effect around the... | 05/06/2008 |
| 7368766 | Semiconductor light emitting element and method for fabricating the same The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer. ... | 05/06/2008 |
| 7342950 | Tunable laser source with integrated optical modulator A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both t... | 03/11/2008 |
| 7268005 | Apparatus and method for stacking laser bars for uniform facet coating An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a ... | 09/11/2007 |
| 7250318 | System and method for providing automated sample preparation for plan view transmission electron microscopy A system and method is described for providing automated sample preparation for plan view transmission electron microscopy. A sample wafer is microcleaved from a semiconductor wafer and mounted on a first support stub. Then the sample wafer is cut with an automated ... | 07/31/2007 |
| 7142576 | Semiconductor laser A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Betwe... | 11/28/2006 |
| 7112460 | Semiconductor laser device, production method therefor, and jig for use in the production method A semiconductor laser device includes a semiconductor substrate on which a semiconductor thin film including an active layer is lamineted, a pair of electrodes respectively provided on opposite faces of the substrate, a light emitting surface defined on a side face ... | 09/26/2006 |
| 7087449 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substr... | 08/08/2006 |
| 7064881 | InP-based phase modulators and methods for making and using same A modulator, including: an active modulator layer including a plurality of step quantum wells, wherein at least one of the plurality of step quantum wells is configured to have a leaky electron energy state; and at least one inactive layer bounding the active modula... | 06/20/2006 |
| 5519721 | Multi-quantum well (MQW) structure laser diode/modulator integrated light source A multi-quantum well (MQW) structure type semiconductor integrated laser element is constituted by a laser diode section and an optical modulator section which is integrated with the laser diode section and which contains a multi-quantum well structure. T... | 05/21/1996 |
| 5502787 | Article comprising a semiconductor waveguide structure Articles according to the invention include a semiconductor waveguide having a core and a cladding, with the cladding including doped semiconductor material. The doping level is selected such that both the real part n and the imaginary part k of the compl... | 03/26/1996 |
| 5252839 | Superluminescent light-emitting diode with reverse biased absorber A non-lasing edge-emitting LED (30) suitable for precision reflectometry has an absorber region (52) which is reverse-biased via a contact (58) to absorb light by Stark absorption or Franz-Keldysch effect. During operation, the gain region (50) is forward... | 10/12/1993 |
| 5208821 | Buried heterostructure lasers using MOCVD growth over patterned substrates This invention pertains to buried heterostructure lasers which have been fabricated using a single step MOCVD growth of an MQW laser structure over a pattern etched GaAs substrate. The wet chemical etching of grooves having a dovetailed cross-section and ... | 05/04/1993 |
| 5192985 | Semiconductor light-emitting element with light-shielding film A semiconductor light-emitting element includes a current pinching type semiconductor light-emitting element main body, which utitlizes light extracted from a surface parallel to a light-emitting layer, and a light-shielding film, which is locally or enti... | 03/09/1993 |
| 5170405 | Semiconductor diode laser having smaller beam divergence A distributed feed back semiconductor diode laser comprising a substrate of n-type conductivity gallium arsenide having a channel along one surface thereof between its end surfaces. A first clad layer of n-type gallium aluminum arsenide is on the surface ... | 12/08/1992 |
| 5153890 | Semiconductor device comprising a layered structure grown on a structured substrate A semiconductor device such as a laser diode grown on a structured substrate surface having horizontal regions and adjacent inclined sidewall surfaces. The horizontal regions are of standard orientation while the inclined surfaces are misoriented. The lay... | 10/06/1992 |
| 5132751 | Light-emitting diode array with projections A light-emitting diode array in which the light-emitting surface for external output of light from the light-emitting layer is processed to give it a slope, for example, which by increasing the critical angle of the internal reflection between the active ... | 07/21/1992 |
| 5054031 | Semiconductor laser device A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the... | 10/01/1991 |
| 4855250 | Method of manufacturing a semiconductor laser with autodoping control A method of manufacturing a semiconductor light emitting device by forming a compound semiconductor structure with homo- or heterojunction therein having a first p-type compound semiconductor crystal layer at the top of the structure, growing a second p-t... | 08/08/1989 |
| 4845014 | Method of forming a channel A method of forming a variable width channel in a body comprises the steps of forming a surface grating having a photoresist layer thereon. The photoresist layer has a plurality of depressions and a planar photomask is then positioned over the photoresist... | 07/04/1989 |
| 4843031 | Method of fabricating compound semiconductor laser using selective irradiation Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junct... | 06/27/1989 |
| 4839884 | Multiple wavelength optical source and multiplexed light communication system An external-cavity laser includes low-level, broad spectrum light sources and plural light amplifiers. The external cavity includes a common partially reflecting mirror, and a common diffraction grating which couples the mirror to the light amplifiers. Th... | 06/13/1989 |
| 4839308 | Method of making an external-coupled-cavity diode laser A monolithic external-coupled-diode laser structure uses high reflectivity facet coatings to reduce the operating current and to improve suppression of unwanted longitudinal modes.... | 06/13/1989 |
| 4833510 | Semiconductor laser array with independently usable laser light emission regions formed in a single active layer A semiconductor laser array includes a pair of regions of an active layer for emitting laser lights being provided so as to produce a predetermined angle therebetween; the respective regions of the active layer being provided so as to have TE wave electri... | 05/23/1989 |
| 4829531 | External resonator type semiconductor laser The external resonator type semiconductor laser of the present invention includes a semiconductor laser element, a reflection member having a reflecting mirror surface for feeding back to the laser element a laser beam emitted from an emitting end surface... | 05/09/1989 |
| 4824747 | Method of forming a variable width channel A method of forming a channel of varying width in a body comprises the steps of forming a plurality of masking elements having an opening therethrough intersecting a plurality of the elements on a surface of the body, partially flowing the elements into t... | 04/25/1989 |
| 4819245 | Semiconductor laser device having substriped channels for forming an active layer which is thin in an inside portion A semiconductor laser device comprises a substrate having a main striped channel for confining current therein and sub-striped channels formed in a parallel manner outside of the main striped channel. The width of the sub-striped channels is greater than ... | 04/04/1989 |
| 4791649 | Semiconductor laser device A multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation on a V-stripe channeled substrate having a current-blocking layer thereon. The active layer further includes regions by means of which carriers... | 12/13/1988 |
| 4788159 | Process for forming a positive index waveguide A process of preparing a laterally confined positive index waveguide is disclosed in which a monocrystalline substrate comprised of a III-V compound is provided having adjacent one major surface monocrystalline gallium aluminum arsenide having a resistivi... | 11/29/1988 |
| 4777637 | Interferometric semiconductor laser device An interferometric semiconductor laser device having a built-in effective refraction index difference, based on the absorption of light by a substrate, between the portion of the active layer corresponding to the inside area of a striped channel formed on... | 10/11/1988 |
| 4774554 | Semiconductor devices employing Ti-doped Group III-V epitaxial layer High resistivity Ti-doped Group III-V-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.... | 09/27/1988 |
| 4769342 | Method for making a semiconductor laser by cleaving a cantilever heterostructure A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portio... | 09/06/1988 |
| 4747109 | Semiconductor laser array device The laser device has a plurality of parallel index-waveguides. The intermediate regions of the waveguides are at an angle of inclination from a line perpendicular to each of both facets of the laser device. The ends of the waveguides are oriented orthogon... | 05/24/1988 |
| 4731791 | Buried hetero-structure laser diode A buried hetero-structure laser diode is disclosed. The buried hetero-structure is formed by growing a double hetero-structure on a substrate. The double hetero-structure comprises two cladding layers spaced apart by a narrow bandgap active layer. Two spa... | 03/15/1988 |
