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| Number | Title | Issue Date |
| 8184671 | Semiconductor optical element, semiconductor laser using the semiconductor optical element, and optical transponder using the semiconductor laser A semiconductor optical element includes an n-type substrate, an n-type clad layer formed upward of the n-type substrate, a p-type clad layer formed upward of the n-type substrate, a guide layer, formed between the p-type clad layer and the n-type clad layer, for wa... | 05/22/2012 |
| 8144743 | Nitride based semiconductor device and fabrication method for the same A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an el... | 03/27/2012 |
| 8139620 | Nitride semiconductor laser device The nitride semiconductor laser device includes a substrate, a nitride semiconductor layer having a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer stacked in this order on the substrate, and a ridge provided on a surface... | 03/20/2012 |
| 8111727 | High power semiconductor opto-electronic device Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal ... | 02/07/2012 |
| 8111728 | Semiconductor laser and manufacturing process thereof A semiconductor laser has a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, an active layer disposed above the lower cladding layer, a first upper cladding layer disposed above the active layer, a second upper cladding layer di... | 02/07/2012 |
| 8098702 | Step well quantum cascade structures A Quantum Cascade (QC) structure(s) for use in Quantum Cascade Lasers (QCLs) that use step quantum well(s) in which the radiative and LO-phonon transitions are both vertical transitions and within the same step well. This approach allows for a high oscillator streng... | 01/17/2012 |
| 8073031 | Laser diode with improved heat dissipation A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away f... | 12/06/2011 |
| 8068529 | Surface emitting laser manufacturing method, surface emitting laser array manufacturing method, surface emitting laser, surface emitting laser array, and optical apparatus including surface emitting laser array Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for... | 11/29/2011 |
| 8059689 | Vertical cavity surface emitting laser, vertical cavity surface emitting laser device, optical transmission device, and information processing apparatus A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconduct... | 11/15/2011 |
| 7986721 | Semiconductor optical device including a PN junction formed by a second region of a first conductive type semiconductor layer and a second conductive type single semiconductor layer In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The... | 07/26/2011 |
| 7974325 | Methods and apparatus for generating terahertz radiation Apparatus and methods for generating radiation via difference frequency generation (DFG). In one exemplary implementation, a quantum cascade laser (QCL) has a significant second-order nonlinear susceptibility (χ(2)) integrated in an active region of the ... | 07/05/2011 |
| 7965753 | Monolithic semiconductor laser An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conducti... | 06/21/2011 |
| 7957444 | Surface-emission laser diode, surface-emission laser diode array, optical scanning apparatus and image forming apparatus A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure in... | 06/07/2011 |
| 7949027 | Semiconductor laser device A semiconductor laser device includes: an n-type cladding layer; a p-type cladding layer; and an optical waveguide portion disposed between the n-type and p-type cladding layers and including spaced-apart active layers. The optical waveguide portion permits lasing i... | 05/24/2011 |
| 7912105 | Vertical cavity surface emitting laser A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active... | 03/22/2011 |
| 7881353 | Surface emitting laser element array Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the... | 02/01/2011 |
| 7860141 | Photonic crystal laser One objective of the present invention is to provide a laser device which is capable of scanning beams of a laser light of high output power at a high speed without using mechanical scanning mechanisms. A plurality of the upper electrodes 33 is linearly arran... | 12/28/2010 |
| 7852892 | Semiconductor laser device and method for manufacturing the same A ridge stripe semiconductor laser device includes a first conductivity type cladding layer 103, an active layer 104, a second conductivity type first cladding layer 105, a second conductivity type second cladding layer 108 in a ridge-sha... | 12/14/2010 |
| 7839911 | Semiconductor laser device A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width o... | 11/23/2010 |
| 7835413 | Semiconductor laser A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor la... | 11/16/2010 |
| 7817692 | Nitride semiconductor laser device having current blocking layer and method of manufacturing the same A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made o... | 10/19/2010 |
| 7813402 | Surface emitting laser and method of manufacturing the same Provided is a surface emitting laser which can maintain a fundamental transverse mode to obtain higher power while higher-order transverse mode oscillations are suppressed, and a method of manufacturing the surface emitting laser. The surface emitting laser includes... | 10/12/2010 |
| 7804870 | Semiconductor optical device and manufacturing method thereof In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×1018 cm−3 and the Fe concentration is 1.8×1017 cm−3. In a semi-insulating burying layer, Fe is doped as an impurit... | 09/28/2010 |
| 7751456 | Method for manufacturing semiconductor optical device A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiO2 film; forming channels and a waveguide ridge between the channels in the wafer; forming an SiO2 film over the waf... | 07/06/2010 |
| 7733935 | Nitride semiconductor laser device and method of producing the same A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer und... | 06/08/2010 |
| 7724796 | Organic laser A device comprising an organic light emitting layer may be optically pumped to create excited states within the layer. When an electric field is applied across the layer, the excited states may dissociate into geminate polaron pairs within the organic layer. The dis... | 05/25/2010 |
| 7720123 | Buried type semiconductor laser A buried type semiconductor laser 1 is made of a p-type InP substrate 2 and includes a ridge section 6 made up of a p type InP first clad layer 3, AlGaInAs distorted quantum well active layer 4 and n type InP second clad layer 5... | 05/18/2010 |
| 7701993 | Semiconductor optical device and a method of fabricating the same In order to provide excellent device characteristics and enhance fabrication yield and run-to-run reproducibility in a buried device structure using a low mesa on a p-type substrate, a cross sectional configuration before growth of a contact layer of a device, i.e.,... | 04/20/2010 |
| 7693200 | Semiconductor laser diode having ridge A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has ... | 04/06/2010 |
| 7672347 | Semiconductor light emitting device A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in ... | 03/02/2010 |
| 7672348 | Semiconductor laser and method of manufacture Disclosed is a laser (10) comprising a lasing cavity with a lasing medium and primary optical feedback means in the form of a facet (17) at either end of the cavity, the laser cavity defining a longitudinally extending optical path; and secondary optic... | 03/02/2010 |
| 7656921 | Semiconductor laser device and method for manufacturing the same semiconductor laser device A current blocking structure of a semiconductor laser includes a p-type InP buried layer, an n-type InP current blocking layer, and a p-type InP current blocking layer laminated along the mesa side surface of a ridge. In the structure, an upper end part of the n-typ... | 02/02/2010 |
| 7646797 | Use of current channeling in multiple node laser systems and methods thereof Current channels, blocking areas, or strips in a semiconductor laser are used to channel injected current into the antinodal region of the optical standing wave present in the optical cavity, while restricting the current flow to the nodal regions. Previous devices ... | 01/12/2010 |
| 7633982 | Optically pumped surface emitting semiconductor laser device A surface emitting semiconductor laser device, having at least one monolithically integrated pump radiation source (20), in which the pump radiation source (20) has at least one edge emitting semiconductor structure (9) that is suitable for emis... | 12/15/2009 |
| 7613218 | Self-pulsation nitride semiconductor laser device and method for fabricating the same In a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer and a current blocking layer having an opening for confining a current flowing to the active layer, a regrown layer made of a nitride semicon... | 11/03/2009 |
| 7583716 | Semiconductor laser device A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor la... | 09/01/2009 |
| 7567604 | Optical device with integrated semi-conductor laser source and integrated optical isolator The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called ab... | 07/28/2009 |
| 7564884 | Ridge-stripe semiconductor laser A laminated composite includes: a 1st-conductive-type cladding layer laid on a substrate; an active layer laid on the 1st-conductive-type cladding layer; and a ridge-stripe 2nd-conductive-type cladding layer laid on the active layer. A pair of films is disposed at t... | 07/21/2009 |
| 7558307 | Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system In a semiconductor laser device, a p-side electrode (114) of a multilayer structure put in contact with the surface of a ridge portion (130) of a second conductive type semiconductor layer group (p-AlGaAs first upper cladding layer (108), p-AlGa... | 07/07/2009 |
| 7551658 | Buried ridge waveguide laser diode Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is comp... | 06/23/2009 |
