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| Number | Title | Issue Date |
| 8179943 | Semiconductor saturable absorber reflector and method to fabricate thereof A design of a semiconductor saturable absorber that offers a convenient and reliable way to control/decrease the recovery time of the absorption. The absorption recovery time is controlled during the epitaxial growth by using lattice-mismatched layer(s) to induce di... | 05/15/2012 |
| 7944958 | Pulsed laser light source based on frequency conversion A light emitting device including a waveguide having an electrically pumped gain region, a saturable absorber, a nonlinear crystal, an inclined mirror, and a light-concentrating structure. Light pulses emitted from the gain region are reflected by the inclined mirro... | 05/17/2011 |
| 7746910 | Semiconductor laser diode and its fabrication process A semiconductor laser diode device with small driving current and no distortion in the projected image. The semiconductor laser diode includes an n-GaAs substrate and, an n-cladding layer on the n-GaAs substrate, an active layer, a p-clad layer, a multilayer formed ... | 06/29/2010 |
| 7394841 | Light emitting device for visual applications A light emitting device comprises a waveguide having an electrically pumped gain region, a nonlinear medium, and an inclined mirror. Light pulses emitted from the gain region are reflected by the inclined mirror into the nonlinear medium in order to generate frequen... | 07/01/2008 |
| 7391800 | Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavel... | 06/24/2008 |
| 7356064 | Polarization switching and control in vertical cavity surface emitting lasers A fast current-controlled polarization switching VCSEL with two independent intra-cavity p-contact electrodes and two independent intra-cavity n-contact electrodes positioned along the four sides of the symmetric aperture such that there are two independent p- and n... | 04/08/2008 |
| 7356060 | Semiconductor laser device and method for fabricating the same A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part ... | 04/08/2008 |
| 7347354 | Metallic solder thermal interface material layer and application of the same A method of bonding a thermal interface layer to a heat dissipating member and the resulting device are described. The method may involve plating a bonding surface of the heat dissipating member, and bonding a metallic solder onto the plating under vacuum or inert c... | 03/25/2008 |
| 7339966 | Semiconductor laser device and method for manufacturing the same The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser device according to the invention includes a first p type AlGaInP-ba... | 03/04/2008 |
| 7339969 | Refined mirror structure for reducing the effect of feedback on a VCSEL A VCSEL is provided that integrates an absorbing layer sandwiched within a null of the standing wave in the emitting mirror to reduce the reflectivity and transmissivity of the emitting mirror as seen by the feedback optical wave, with minimal effect on the reflecti... | 03/04/2008 |
| 7333522 | Polarization control of vertical diode lasers by monolithically integrated surface grating There is provided a laser. The laser includes a substrate, a first Bragg reflector layer sequence on the substrate, an active layer sequence on the first Bragg reflector layer sequence, a second Bragg reflector layer sequence on the active layer sequence, and a volt... | 02/19/2008 |
| 7301978 | Semiconductor laser element with optical waveguide layer having increased thickness In a semiconductor laser element: a lower cladding layer of In0.49(Alx1Ga1-x1)0.51(x2 | 11/27/2007 |
| 7295587 | Semiconductor laser having optical guide layer doped for decreasing resistance In a semiconductor laser element: a lower cladding layer of a first conductivity type, a quantum-well active layer, an upper cladding layer of a second conductivity type, a contact layer of the second conductivity type, and a first electrode of the second conductivi... | 11/13/2007 |
| 7285858 | Semiconductor device and its manufacture method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first ... | 10/23/2007 |
| 7263115 | Semiconductor device and a method of manufacturing a semiconductor device A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absor... | 08/28/2007 |
| 7263114 | Semiconductor laser diode A semiconductor laser diode is provided, including: an active layer; an upper clad layer formed above the active layer; a first lower clad layer formed below the active layer; a second lower clad layer formed under the first lower clad layer; and a substrate formed ... | 08/28/2007 |
| 7251262 | Surface emitting semiconductor laser and communication system using the same A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate. ... | 07/31/2007 |
| 7245419 | Wavelength-stabilized pump diodes for pumping gain media in an ultrashort pulsed laser system In an optical amplifier, passively wavelength-stabilized pump diodes generate pumping light to excite a gain medium (e.g., rare-earth-ion doped optical fiber or solid-state optical amplifier) near an absorption peak of the gain medium. The gain medium amplifies a pu... | 07/17/2007 |
| 7235818 | Flip chip type nitride semiconductor light emitting device and manufacturing method thereof Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of t... | 06/26/2007 |
| 7233643 | Measurement apparatus and method for determining the material composition of a sample by combined X-ray fluorescence analysis and laser-induced breakdown spectroscopy A measurement apparatus and method are provided for determining the material composition of a sample. An X-ray fluorescence detector (412) detects fluorescent X-rays coming from said sample under irradiation with incident X-rays. A laser source (301) i... | 06/19/2007 |
| 7221692 | Semiconductor laser device and its manufacturing method A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the secon... | 05/22/2007 |
| 7218660 | Single-mode vertical cavity surface emitting lasers and methods of making the same In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure in... | 05/15/2007 |
| 7145165 | Tunable laser fluid sensor A sensitive fluid sensor for detecting fluids and particularly trace fluids. The sensor may be adjustable for detecting fluids of various absorption lines. To effect such adjustment, a tunable laser may be used. The laser may be an edge emitting diode, a VCSEL or ot... | 12/05/2006 |
| 7133430 | Semiconductor laser element and method of fabrication thereof A semiconductor laser element having an advantageous vertical light confinement efficiency, a low threshold current and a low element resistance is provided. The semiconductor laser element has a substrate and a stacked structure formed thereon, where the stacked st... | 11/07/2006 |
| 7110427 | Hybrid mirror VCSEL The invention is generally concerned with vertical cavity surface emitting lasers. In one example, the vertical cavity surface emitting laser includes, among other things, an upper mirror structure having a metal contact, a top mirror above the metal contact, and a ... | 09/19/2006 |
| 7095769 | Semiconductor laser diode with higher-order mode absorption layers A semiconductor laser diode capable of achieving an improvement in kink level and an improvement in catastrophic optical damage (COD) level. The semiconductor laser diode includes a first-conductivity type semiconductor substrate, a first-conductivity type clad laye... | 08/22/2006 |
| 7092423 | Semiconductor laser device, optical disk apparatus and optical integrated unit A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding... | 08/15/2006 |
| 7088756 | Polarization maintaining dispersion controlled fiber laser source of ultrashort pulses A modelocked linear fiber laser cavity with enhanced pulse-width control includes concatenated sections of both polarization-maintaining and non-polarization-maintaining fibers. Apodized fiber Bragg gratings and integrated fiber polarizers are included in the cavity... | 08/08/2006 |
| 7072371 | Ridge-type semiconductor laser element fabrication method The present invention provides a ridge-type semiconductor laser devise comprising: a lower cladding layer of a first conductivity type, an active layer, and a first upper cladding layer of a second conductivity type, which are sequentially stacked on a compound semi... | 07/04/2006 |
| 6658034 | Surface-emitting semiconductor laser A laser suitable for intra-cavity laser absorption spectroscopy and for telecommunication system comprises a Bragg mirror, a multiple quantum well active region and an anti-reflective coating together with a second mirror spaced from the coating to define... | 12/02/2003 |
| 6643307 | Semiconductor laser device A semiconductor laser device includes: active layer; first cladding layer, which is formed on the active layer and is made of (AlX1 Ga1-X1)Z1 In1-Z1 P (where 0ࣘX1ࣘ1 and 0 | 11/04/2003 |
| 6621843 | Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor sub... | 09/16/2003 |
| 5537666 | Surface emission type semiconductor laser In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the o... | 07/16/1996 |
| 5495360 | 1.5 μm wavelength asymmetric fabry-perot modulator with negative chirp An asymmetric Fabry-Perot modulator (AFPM) is disclosed having an operating wavelength in the 1.5 μm region used for long-haul optical transmission. The AFPM includes electro-absorption material consisting of an Alx Iny Ga1-x-y... | 02/27/1996 |
| 5416790 | Semiconductor laser with a self-sustained pulsation A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semicon... | 05/16/1995 |
| 5283799 | Semiconductor laser with a saturable absorber In this laser two successive sections of a light guide form a light amplifier (S1) and a saturable absorber (S2). In the invention a passive section (S3) of the guide follows the absorber. The invention is applicable especially to processing an optical si... | 02/01/1994 |
| 5255279 | Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device On a GaAs substrate (AlY Ga1-Y)0.5 In0.5 P crystal layers (0ࣘYࣘ1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the la... | 10/19/1993 |
| 5235194 | Semiconductor light-emitting device with InGaAlP A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of Inx Gay Al1-x-y P (0ࣘx, yࣘ1) layers, and a light-emitting-layer holding layer consisting of an ind... | 08/10/1993 |
| 5182788 | Optical bandpass filter having a variable passband wavelength An optical bandpass filter comprises a waveguide region for guiding an optical beam from an input end to an output end, a clad structure provided above and below the waveguide region for confining the optical beam therein, a plurality of quantum well boxe... | 01/26/1993 |
| 5113405 | Semiconductor diode laser having a stepped effective refractive index Semiconductor diode lasers of the so-called NAM (Non-Absorbing Mirror) type are used due to the high emanating power as writing (and reading) lasers in optical recording systems. The known lasers of this type include both in the active region (13') and in... | 05/12/1992 |
