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| Number | Title | Issue Date |
| 8189639 | GaN-based laser diodes with misfit dislocations displaced from the active region A GaN-based edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate is characterized by a threading dis... | 05/29/2012 |
| 8149888 | Single photon source An embodiment of the invention relates to a single-photon source for emitting single photons, comprising a cavity having a first mirror and a second mirror and exhibiting a longitudinal resonance frequency between the first and second mirror; at least one quantum do... | 04/03/2012 |
| 8144742 | Surface emitting laser device To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper multilayer reflector; a strained active layer arranged in the resonator, the s... | 03/27/2012 |
| 8054862 | Optoelectronic devices Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first conductivity-type cladding layer, the active layer including a well layer made ... | 11/08/2011 |
| 8050304 | Group-III nitride based laser diode and method for fabricating same A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second sepa... | 11/01/2011 |
| 8045595 | Self aligned diode fabrication method and self aligned laser diode A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and sacrificial layer. A ridge is formed in the laser diode epitaxial structur... | 10/25/2011 |
| 8023545 | Semiconductor light emitting device In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer havi... | 09/20/2011 |
| 7974323 | Semiconductor laser A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain against the GaAs, and a barrier layer having AlGaInP that has substan... | 07/05/2011 |
| 7856041 | Semiconductor having enhanced carbon doping A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction l... | 12/21/2010 |
| 7848376 | Quantum cascade laser structure A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105... | 12/07/2010 |
| 7830939 | Low cost InGaAIN based lasers A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the se... | 11/09/2010 |
| 7813401 | Electrically pumped low-threshold ultra-small photonic crystal lasers The invention is a photonic crystal laser including a photonic crystal slab laser cavity including InGaP/InGaAlP crystalline layers, the InGaP/InGaAlP crystalline layers having a relaxed strain at one or more etched surfaces and a higher strain at a plurality of qua... | 10/12/2010 |
| 7813400 | Group-III nitride based laser diode and method for fabricating same A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second sepa... | 10/12/2010 |
| 7796661 | Semiconductor laser A semiconductor laser comprises: a semiconductor substrate and a lower cladding layer, an active layer, and an upper cladding layer on the semiconductor substrate. The layers form a resonator having opposed end surfaces. A ridge includes part of the upper cladding l... | 09/14/2010 |
| 7787509 | Semiconductor laser device In a constitution where a first clad layer is formed on a semiconductor substrate, an active layer having the strained multiple quantum well structure is formed on the first clad layer, and a second clad layer is formed on the active layer, the sum of products of st... | 08/31/2010 |
| 7787510 | Nitride semiconductor laser chip, nitride semiconductor laser device, and manufacturing method of nitride semiconductor laser chip Provided are a nitride semiconductor laser chip with a reliability improved by relieving stress due to strain within the nitride semiconductor laser chip, a manufacturing method thereof, and a nitride semiconductor laser device. The nitride semiconductor laser chip ... | 08/31/2010 |
| 7782919 | Buried semiconductor laser and method for manufacturing the same A buried semiconductor laser exhibiting a reduced dislocation of a contact layer is achieved. A buried semiconductor laser, comprising: an n-type indium phosphide (InP) substrate; an active layer disposed on the n-type InP substrate; block layers provided so as to b... | 08/24/2010 |
| 7711024 | Monolithic semiconductor laser There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element (10a) and an InGaAlP based semiconductor laser element (10b) formed on a semiconductor substrate (1). The AlGaAs... | 05/04/2010 |
| 7684455 | Oscillator and imaging apparatus utilizing resonant tunneling diode structure An oscillator including a substrate and a resonant tunneling diode including a gain medium provided on the substrate. The gain medium includes at least two quantum well layers and plural barrier layers for separating the quantum well layers from each other. The quan... | 03/23/2010 |
| 7684454 | High power vertical cavity surface emitting laser An improved VECSEL device is provided in which the gain of each of the quantum well layers can be increased in a periodic gain structure. A vertical external cavity surface emitting laser (VECSEL) device comprising: a substrate; a bottom DBR mirror formed on the sub... | 03/23/2010 |
| 7668219 | Surface emitting semiconductor device A surface emitting semiconductor device comprises: a semiconductor region including an active layer; a first DBR having first layers and second layers; and a second DBR. The first and second layers are alternately arranged, and the first layers are made of dielectri... | 02/23/2010 |
| 7656920 | Semiconductor laser device A semiconductor laser device producing light having a TE-polarized component suitable for practical use (i.e., light having TE-polarized light intensity sufficiently high for practical use). A semiconductor laser device includes a GaAsP active layer, InGaP guide lay... | 02/02/2010 |
| 7653104 | Semiconductor laser device A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe... | 01/26/2010 |
| 7586967 | Semiconductor laser and method of manufacturing the same A semiconductor laser manufactured by selective MOVPE growth, in which the lattice relaxation of recombination layers grown on large width portions is suppressed, the leak current is suppressed, and the reliability is high. When a semiconductor layer is manufactured... | 09/08/2009 |
| 7583715 | Semiconductor conductive layers Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping levels to be achieved than for a bulk (random) alloy with the same average... | 09/01/2009 |
| 7577176 | Surface emitting laser device An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer is arranged in the resonat... | 08/18/2009 |
| 7420202 | Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and... | 09/02/2008 |
| 7415055 | Reliability-enhancing layers for vertical cavity surface emitting lasers Vertical cavity surface emitting lasers (VCSELs) and methods of making the same are described. The VCSELs include reliability-enhancing layers that perform specific functions at one or more critical locations within a VCSEL structure to reduce or prevent defect form... | 08/19/2008 |
| 7408968 | Semiconductor laser device and method for fabricating the same A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a fir... | 08/05/2008 |
| 7391800 | Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavel... | 06/24/2008 |
| 7378680 | Migration enhanced epitaxy fabrication of quantum wells Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum we... | 05/27/2008 |
| 7366216 | Semiconductor laser element formed on substrate having tilted crystal orientation A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at... | 04/29/2008 |
| 7362786 | Semiconductor laser element having tensile-strained quantum-well active layer In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of... | 04/22/2008 |
| 7354815 | Method for fabricating semiconductor devices using strained silicon bearing material A method of manufacturing an integrated circuit on semiconductor substrates. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. The semiconductor substrate has an overlying film of mat... | 04/08/2008 |
| 7333523 | Semiconductor laser device A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow ... | 02/19/2008 |
| 7317202 | Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor m... | 01/08/2008 |
| 7313159 | Apparatus and method for providing a single-mode grating-outcoupled surface emitting laser with detuned second-order outcoupler grating An improved grating-outcoupled surface-emitting semiconductor laser architecture is provided. A second-order grating is placed between two distributed Bragg reflector gratings. The period of the second order grating is positively or negatively detuned from the distr... | 12/25/2007 |
| 7310361 | Intersubband semiconductor lasers with enhanced subband depopulation rate Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have g... | 12/18/2007 |
| 7305017 | Semiconductor optical device In a semiconductor optical device, the semiconductor substrate has a primary surface intersecting with a predetermined axis. The lower cladding region of the first conductive type is provided on the primary surface thereof. The lower cladding region includes ridge r... | 12/04/2007 |
| 7301180 | Structure and method for a high-speed semiconductor device having a Ge channel layer The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET include... | 11/27/2007 |
