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| Number | Title | Issue Date |
| 8189638 | Laser diode device A laser diode device comprises an n-type cladding layer containing aluminum (Al); an active layer containing indium (In), gallium (Ga) and nitrogen (N); and a codoped layer that is provided between the substrate and the n-type cladding layer. The codoped layer is al... | 05/29/2012 |
| 8175128 | Semiconductor laser element and semiconductor laser device A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the... | 05/08/2012 |
| 8175129 | Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode elect... | 05/08/2012 |
| 8160116 | Semiconductor laser and method for manufacturing the same The present invention provides a semiconductor laser including a first conductive type of a lower clad layer 12, an active layer 14 provided on the lower clad layer 12, the active layer 14 including a plurality of quantum dots, and a seco... | 04/17/2012 |
| 8144741 | Semiconductor laser A semiconductor laser comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed bet... | 03/27/2012 |
| 8126024 | Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater An optical device having a structured active region configured for one or more selected wavelengths of light emissions of 500 nm and greater, but can be others. ... | 02/28/2012 |
| 8111726 | Semiconductor laser device A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding layer located on the same side of the active layer as the n-type clad... | 02/07/2012 |
| 8102890 | Semiconductor light emitting device A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, an... | 01/24/2012 |
| 8094696 | Semiconductor laser device A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ:in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AIN) in contact with an facet of a re... | 01/10/2012 |
| 8089997 | Laser device The laser device has a gain medium, first and second clads sandwiching the gain medium in the thickness direction, and a cavity structure for resonating the electromagnetic wave generated in the gain medium. The gain medium includes a plurality of active regions for... | 01/03/2012 |
| 8085826 | Nitride semiconductor laser device A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN cla... | 12/27/2011 |
| 8077752 | Vertical cavity surface emitting laser A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current ... | 12/13/2011 |
| 8068528 | Quantum cascade laser A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection laye... | 11/29/2011 |
| 8023544 | Semiconductor light emitting devices with non-epitaxial upper cladding The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. I... | 09/20/2011 |
| 8000366 | Laser diode with high indium active layer and lattice matched cladding layer A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN a... | 08/16/2011 |
| 7983317 | MQW laser structure comprising plural MQW regions Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than th... | 07/19/2011 |
| 7970034 | Laser diode device A laser diode device with which a low voltage is realized is provided. The laser diode device includes: a substrate; a semiconductor laminated structure including a first conductive cladding layer, an active layer, and a second conductive cladding layer on one face ... | 06/28/2011 |
| 7965749 | Laser diode and method of manufacturing the same Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the ac... | 06/21/2011 |
| 7965751 | Direct modulated modified vertical cavity surface emitting lasers A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the... | 06/21/2011 |
| 7965750 | Semiconductor light emitting device A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, an... | 06/21/2011 |
| 7957443 | Laser device Provided is a long wavelength laser of which the operating point is stabilized and the laser oscillation is stabilized. The long wavelength laser comprises a resistor element provided to a portion where the surface current is maximum in a surface plasmon waveguide t... | 06/07/2011 |
| 7944957 | Surface emitting semiconductor laser, method for fabricating surface emitting semiconductor laser, module, light source apparatus, data processing apparatus, light sending apparatus, optical spatial transmission apparatus, and optical spatial transmission system A surface emitting semiconductor laser includes a substrate, a lower reflective mirror formed on the substrate, an active layer formed on the lower reflective mirror, an upper reflective mirror formed on the active layer, an optical mode controlling layer formed bet... | 05/17/2011 |
| 7936798 | Nitride based laser diode and method of manufacturing nitride based laser diode The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (2), bottom n-type ... | 05/03/2011 |
| 7929588 | Semiconductor devices and methods for generating light Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated... | 04/19/2011 |
| 7920612 | Light emitting semiconductor device having an electrical confinement barrier near the active region Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having... | 04/05/2011 |
| 7920613 | Optical semiconductor device and method of manufacturing same The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under ... | 04/05/2011 |
| 7920614 | Semiconductor laser A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a subs... | 04/05/2011 |
| 7907653 | Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrate 10 is comprised of: a semicondu... | 03/15/2011 |
| 7903711 | Separate confinement heterostructure with asymmetric structure and composition A separate confinement heterostructure includes a quantum-well layer bounded by an n-side waveguide layer and a p-side waveguide layer. The waveguide layers guide a lasing mode of the heterostructure. The n-side waveguide layer is composed of indium gallium phosphid... | 03/08/2011 |
| 7885306 | Edge-emitting semiconductor laser chip What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structu... | 02/08/2011 |
| 7885305 | Semiconductor laser device and semiconductor laser device array In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main wav... | 02/08/2011 |
| 7881352 | Laser device Provided is a long wavelength laser of which the operating point is stabilized and the laser oscillation is stabilized. The long wavelength laser comprises a resistor element provided to a portion where the surface current is maximum in a surface plasmon waveguide t... | 02/01/2011 |
| 7864828 | Laser device A cascade laser device, including a multilayer film structure with a multiple quantum well including a potential barrier and a quantum well; and an electric field applying portion for applying an electric field to the multilayer film structure. The multilayer film s... | 01/04/2011 |
| 7860140 | Light-emitting device with double intermediate layers between mesa stripe and iron-doped current blocking layer A light-emitting device that reduces the leak current flowing along the sides of the mesa stripe is disclosed. The device provides the mesa stripe, the current blocking layer, and two intermediate layers put between the mesa stripe and the current blocking layer. On... | 12/28/2010 |
| 7860139 | Semiconductor laser device A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side th... | 12/28/2010 |
| 7860138 | Semiconductor laser light emitting device and method for manufacturing same A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first active layer 12 and a first upp... | 12/28/2010 |
| 7848375 | Ridge waveguide laser with flared facet Embodiments disclosed herein relate to a laser die. The laser die includes a base epitaxial portion, a mesa portion, and first and second facets, wherein at least one of the first and second facets is flared such that an area of the facet is increased. Embodiments d... | 12/07/2010 |
| 7848374 | Light-emitting device and manufacturing method thereof Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conducti... | 12/07/2010 |
| 7843981 | Quantum cascade laser A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structures 16 each of which includes a quantum well ligh... | 11/30/2010 |
| 7839910 | Laser device The laser device has a gain medium, first and second clads sandwiching the gain medium in the thickness direction, and a cavity structure for resonating the electromagnetic wave generated in the gain medium. The gain medium includes a plurality of active regions for... | 11/23/2010 |
