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| Number | Title | Issue Date |
| 8139619 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis... | 03/20/2012 |
| 8111725 | Surface-emitting laser, surface-emitting laser array, optical scanning device, and image forming apparatus A disclosed surface-emitting laser includes a substrate and multiple semiconductor layers stacked on the substrate. A normal of the principal plane of the substrate is inclined with respect to one of crystal orientations toward one of crystal orientations | 02/07/2012 |
| 8107507 | Group III nitride semiconductor element and epitaxial wafer A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer hav... | 01/31/2012 |
| 8077751 | Bar-shaped semiconductor laser chip and method of fabrication thereof A bar-shaped semiconductor laser chip that can hold down a variation in oscillation wavelength is provided. The bar-shaped semiconductor laser chip has a nitride semiconductor substrate and a semiconductor layer formed on the main surface of the nitride semiconducto... | 12/13/2011 |
| 7974322 | Nitride semiconductor laser diode A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a mul... | 07/05/2011 |
| 7933303 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured... | 04/26/2011 |
| 7873088 | Group III nitride semiconductor element and epitaxial wafer A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer hav... | 01/18/2011 |
| 7843980 | Semiconductor laser diode An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding laye... | 11/30/2010 |
| 7813397 | Nitride semiconductor laser device A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivi... | 10/12/2010 |
| 7668218 | Nitride semiconductor laser element The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride se... | 02/23/2010 |
| 7664151 | Nitride semiconductor laser diode A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active laye... | 02/16/2010 |
| 7646798 | Nitride semiconductor laser element A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a protective film formed on at leas... | 01/12/2010 |
| 7453914 | Optical element An optical element includes a surface-emitting type semiconductor laser, and a light-receiving element that detects a part of laser light emitted from the surface-emitting type semiconductor laser, wherein the light-receiving element is formed above the surface-emit... | 11/18/2008 |
| 7366216 | Semiconductor laser element formed on substrate having tilted crystal orientation A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at... | 04/29/2008 |
| 7302124 | Twin waveguide based design for photonic integrated circuits An asymmetric twin waveguide (ATG) structure is disclosed that significantly reduces the negative effects of inter-modal interference in symmetric twin-waveguide structures and which can be effectively used to implement a variety of optical devices. The ATG structur... | 11/27/2007 |
| 7294201 | Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device A crystal substrate and a crystal film of a III-V compound of the nitride system which are manufactured easily and have few dislocations as well as a method of manufacturing a crystal and a method of manufacturing a device with the use thereof are disclosed. On a ba... | 11/13/2007 |
| 7250314 | Display system and method of producing the same Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation lay... | 07/31/2007 |
| 7248612 | Semiconductor laser device with multi-dimensional-photonic-crystallized region This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional phot... | 07/24/2007 |
| 7239654 | Wave length plate, wavelength filter and wavelength monitor On a plate of birefringent crystal made of an LiNbO3 crystal or an LiTaO3 crystal, a conductive substance is adhered to the whole periphery of side surfaces of the plate that intersect an incident surface of a laser beam, thereby to form a wave... | 07/03/2007 |
| 7215476 | Optical pickup, optical information recording/reproducing apparatus using the same, and phase variable wave plate used in the pickup and the apparatus Laser beams respectively emitted from a SHG blue laser unit and a red semiconductor laser unit that have photo detectors respectively are turned into parallel lights by a collimator lens and then coupled by a dielectric multi-layer film mirror so as to be propagated... | 05/08/2007 |
| 7200318 | Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom The invention comprises a composite material comprising a host material in which are incorporated semiconductor nanocrystals. The host material is light-transmissive and/or light-emissive and is electrical chargetransporting thus permitting electrical charge transpo... | 04/03/2007 |
| 7195998 | Compound semiconductor device and manufacturing method thereof A compound semiconductor device including: an isolated mesa section on which an upper surface having two pairs of parallel sides is formed by mesa etching a compound semiconductor wafer, wherein the mesa section is formed from at least a forward mesa surface which i... | 03/27/2007 |
| 7167496 | Mechanical stabilization of lattice mismatched quantum wells In order to achieve a long wavelength, 1.3 micron or above, VCSEL or other semiconductor laser, layers of strained quantum well material are supported by mechanical stabilizers which are nearly lattice matched with the GaAs substrate, or lattice mismatched in the op... | 01/23/2007 |
| 7098063 | Semiconductor laser device and method of manufacturing the same A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. Th... | 08/29/2006 |
| 7023889 | Laser module A laser module has two semiconductor laser devices and a laser driving circuit. These laser devices are placed adjacent to each other. The laser driving circuit has normal and reverse phase data output terminals. One semiconductor laser device is connected to the no... | 04/04/2006 |
| 6611542 | Semiconductor laser element and method of producing the same In a semiconductor laser element having a semiconductor substrate, and a crystal layer formed on a main surface of the semiconductor substrate, the crystal layer having in its inside a waveguide, a light-emitting point alignment mark is provided on an int... | 08/26/2003 |
| 5278855 | Broadband semiconductor saturable absorber Extended wavelength tunability is achieved in a saturable absorber for applications such as modelocking lasers by realizing a semiconductor structure having a tapered energy bandgap profile in a portion of the saturable absorber wherein the profile is giv... | 01/11/1994 |
| 5136601 | Semiconductor laser A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and port... | 08/04/1992 |
| 5086430 | Phase-locked array of reflectivity-modulated surface-emitting lasers A method of fabricating an array of vertical-cavity, surface-emitting lasers that allows the lasers to be phase-locked and the resulting device. The growth of the laterally unpatterned epitaxial vertical-cavity structure includes an upper mirror which is ... | 02/04/1992 |
| 5073893 | Semiconductor structure and semiconductor laser device A semiconductor structure has a substrate crystal having a plurality of crystal orientations. Above the substrate is an atomic-layer superlattice in which different semiconductors are laminated one over another with a period in terms of atomic layers. Thi... | 12/17/1991 |
| 5070508 | Semiconductor laser with adjustable light beam A laser device includes a substrate of semiconductor material having a major surface and a pair of opposed side surfaces. A plurality of laser elements are on the major surface of the substrate and are arranged in a plurality of spaced rows. Each laser el... | 12/03/1991 |
| 4813049 | Semimagnetic semiconductor laser The laser has three regions p-n-n+ or n-p-p+ of magnetic element alloyed Group II-VI elements such as Cd, Hg, and Te doped with an element having a high atomic radius such as Sb or In. The magnetic element may be Mn or Fe. Vapor phase epitaxy is used to c... | 03/14/1989 |
| 4764246 | Buried undercut mesa-like waveguide and method of making same Epitaxial regrowth by vapor phase epitaxy of controlled composition semiconductor material in and around undercut regions of a processed heterostructure wafer permits formation of a ridge waveguide capable of active or passive operation. Subsequent materi... | 08/16/1988 |
| 4742525 | Coupled laser diode arrangement An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the... | 05/03/1988 |
| 4730326 | Semiconductor laser array device A semiconductor laser array device comprising a plurality of index-guided lasing filaments formed in an active layer in a parallel manner, and an electrical current injection portion formed on the upper face of grown layers therefor the flat shape of the ... | 03/08/1988 |
| 4603340 | Semiconductor device having superlattice structure When two indirect only slightly different semiconductor materials having a suitable band gap, for example, AlAs and Al0.8 Ga0.2 As, are grown epitaxially one onto the other in layers of a few unit cell layers thick, the electronic ba... | 07/29/1986 |
| 4592060 | Semiconductor laser with active layer having reduced stress A GaAs semiconductor laser includes a GaAs semiconductor laser element, and a Cu heat sink attached to the GaAs semiconductor laser element through the use of an In solder. The GaAs semiconductor laser element includes an active layer sandwiched by claddi... | 05/27/1986 |
| 4215319 | Single filament semiconductor laser A body of semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate of one conductivity type with a pair of spaced, substantially parallel, dove-tail shaped grooves in a surface thereof. Over the surface of the subst... | 07/29/1980 |
| 4190809 | Stripe lasers An injection laser in which the current flow across the active layer of the device is restricted by confining the current flow across an adjacent interface to a pair of closely spaced parallel stripes. The width and spacing of these stripes is chosen to p... | 02/26/1980 |
| 4122407 | Heterostructure junction light emitting or responding or modulating devices Practice of this disclosure reduces the concentration of intrinsic defects heretofore grown into semiconducting materials. Thereby, the operational lifetime is increased of heterostructure junction light emitting or responding or modulating devices which ... | 10/24/1978 |
