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| Number | Title | Issue Date |
| 8179940 | Semiconductor laser and method for producing the semiconductor laser A semiconductor laser is embodied as a surface emitting thin-film semiconductor laser (2) with a semiconductor body (4). The semiconductor body (4) comprises a first and a second planar surface (12, 14). The semiconductor body (4) ... | 05/15/2012 |
| 8179942 | Semiconductor optical element A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dot... | 05/15/2012 |
| 8179941 | Laser diode and method of manufacturing the same A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, ... | 05/15/2012 |
| 8121163 | Semiconductor laser diode apparatus and method of fabricating the same A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor l... | 02/21/2012 |
| 8121164 | Quantum cascade laser: bias-neutral design A quantum cascade laser (QCL) having a bias-neutral design and a semiconductor with multiple layers of AlxIn1-xAs/InyGa1-yAs. The first active region barrier has a thickness of less than fourteen angstroms, and the second ... | 02/21/2012 |
| 8098700 | Single-exciton nanocrystal laser A laser system employing amplification via a single exciton regime and to optical gain media having single exciton amplification is provided. ... | 01/17/2012 |
| 8068527 | Semiconductor optical element A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dot... | 11/29/2011 |
| 8009712 | Light-emitting device having injection-lockable semiconductor ring laser monolithically integrated with master laser A semiconductor ring laser (SRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz... | 08/30/2011 |
| 8000364 | Nitride semiconductor light emitting device and method of manufacturing the same The present invention provides a nitride semiconductor light emitting device having an n-type ohmic electrode with an Au face excellent in ohmic contacts and in mounting properties, and a method of manufacturing the same. The device uses an n-type ohmic electrode ha... | 08/16/2011 |
| 8000365 | Semiconductor laser device A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In anot... | 08/16/2011 |
| 7907652 | Semiconductor laser device In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an ... | 03/15/2011 |
| 7899102 | Semiconductor laser, method for manufacturing semiconductor laser, optical disk device, and optical pickup A semiconductor laser including: a nitride III-V compound semiconductor substrate configured to have a first planar area, a second planar area, and a third planar area in a major surface, the first planar area being formed of a C-plane, the second planar area being ... | 03/01/2011 |
| 7894499 | Semiconductor laser device with a rounded base mesa structure A semiconductor laser device having a smooth cleavage plane is provided. The provided laser device includes a current injection ridge and force distribution ridges formed adjacent to the current injection ridge, which protrudes from an upper surface of a mesa struct... | 02/22/2011 |
| 7860137 | Vertical cavity surface emitting laser with undoped top mirror A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction l... | 12/28/2010 |
| 7852891 | Nitride semiconductor light-emitting device A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface ... | 12/14/2010 |
| 7839909 | Heterostructure, injector laser, semiconductor amplifying element and a semiconductor optical amplifier a final stage The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhi... | 11/23/2010 |
| 7792170 | Semiconductor laser A semiconductor laser having an oscillation wavelength λ (nm) and comprising at least a substrate, a first-conduction-type clad layer having an average refractive index N1cld, an active layer structure having an average refractive index NA, an... | 09/07/2010 |
| 7787508 | Injector laser Injection radiators are used for pumping solid-state and fiber lasers and amplifiers used for producing medical devices, laser production equipment, lasers generating a double-frequency radiation and in the form of highly efficient general-purpose solid-state radiat... | 08/31/2010 |
| 7764721 | System for adjusting the wavelength light output of a semiconductor device using hydrogenation A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated... | 07/27/2010 |
| 7760782 | Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser The invention aims at realizing a 1300-nm-band direct modulation laser, having a single lateral mode, in which a chip light power of several milliwatts and a low current operation are simultaneously realized. Also, the invention aims at realizing a laser light sourc... | 07/20/2010 |
| 7751454 | Semiconductor laser having protruding portion A semiconductor laser device including: semiconductor layers including an n-type semiconductor layer, an active layer and a p-type semiconductor layer, the semiconductor layers having a stripe-shaped waveguide region formed therein; end face protective film formed o... | 07/06/2010 |
| 7706422 | Semiconductor optical element A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dot... | 04/27/2010 |
| 7586966 | Semiconductor laser diode formed with window at cleavage facet and fabricating method thereof The semiconductor laser diode formed with a window at a cleavage facet and a fabricating method thereof are disclosed, wherein a ridge adjacent to a cleavage facet of the semiconductor laser diode and part of the p-clad layer underneath the ridge are etched to form ... | 09/08/2009 |
| 7573926 | Multiwavelength quantum dot laser element A multiwavelength quantum dot laser element is provided. A perpendicular stack of quantum dot active regions with different light emitting wavelengths is employed, and thickness, material composition, and quantum dot size of each of the quantum dot active regions ar... | 08/11/2009 |
| 7567602 | Optical pickup device, semiconductor laser device and housing usable for the optical pickup device, and method of manufacturing semiconductor laser device A semiconductor laser device includes a first lead having a plate-like mounting portion on which a semiconductor laser chip is mounted and a lead portion extending from the mounting portion, a second lead extending along the lead portion of the first lead, and a ret... | 07/28/2009 |
| 7463661 | Quantum nano-structure semiconductor laser On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a p... | 12/09/2008 |
| 7440483 | Cascaded injection resonator for coherent beam combining of laser arrays The invention provides a cascaded injection resonator for coherent beam combining of laser arrays. The resonator comprises a plurality of laser emitters arranged along at least one plane and a beam sampler for reflecting at least a portion of each laser beam that im... | 10/21/2008 |
| 7436870 | Semiconductor laser device and method for manufacturing the same A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group comp... | 10/14/2008 |
| 7426227 | Semiconductor laser device, optical disk apparatus and optical integrated unit A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding... | 09/16/2008 |
| 7393710 | Fabrication method of multi-wavelength semiconductor laser device The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second ar... | 07/01/2008 |
| 7372885 | Semiconductor laser device and optical information recording apparatus provided therewith A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be produced at lower cost by red... | 05/13/2008 |
| 7369726 | Optical communication between face-to-face semiconductor chips One embodiment of the present invention provides a system that communicates between a first semiconductor die and a second semiconductor die through optical signaling. During operation, the system converts an electrical signal into an optical signal using an electri... | 05/06/2008 |
| 7359113 | Semiconductor optical amplifier having a non-uniform injection current density A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection curren... | 04/15/2008 |
| 7342259 | Optical element An optical element includes a substrate, a columnar section that is formed above the substrate and has an upper surface for light emission or light incidence, a first protection layer formed above the substrate in a region including at least a circumference of the c... | 03/11/2008 |
| 7339967 | Semiconductor device, semiconductor laser device, manufacturing method for semiconductor device, manufacturing method for semiconductor laser device, optical disk device and optical transmission system A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety of which, including lowermost layer, is second conductivity-type. On t... | 03/04/2008 |
| 7333735 | Communication using VCSEL laser array Ultrafast directional beam switching, using coupled VCSELs is combined with a light modulator to provide information transfer at bit rates of tens of GHz. This approach is demonstrated to achieve beam switching frequencies of 32-50 GHz in some embodiments and direct... | 02/19/2008 |
| 7327770 | Nitride semiconductor laser device To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (11... | 02/05/2008 |
| 7324568 | Modulated saturable absorber controlled laser A modulated saturable absorber controlled laser. The laser includes an active medium; a saturable absorber material operationally coupled to the medium to serve as a passive Q switch; and an energy source disposed external to the medium for apply energy to the absor... | 01/29/2008 |
| 7310361 | Intersubband semiconductor lasers with enhanced subband depopulation rate Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have g... | 12/18/2007 |
| 7276735 | Laminated semiconductor substrate and optical semiconductor element A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of In... | 10/02/2007 |
