Class 372/43.01 - Semiconductor

Subclass of Class 372 - Coherent light generators
Definition: Subject matter wherein the active media of the coherent
No. of patents: 556
Last issue date: 05/29/2012

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Number	Title	Issue Date
8189635	Laser diode having nano patterns and method of fabricating the same A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the fir...	05/29/2012
8189636	Electrical overstress event indicator on electronic circuitry Detecting electrical overstress events in electronic circuitry such as optical emitters. In one example embodiment, a laser includes an active area and a contact region in electrical communication with the active area. A portion of the contact region is configured t...	05/29/2012
8189637	Semiconductor light-emitting device and method for manufacturing the same A semiconductor light-emitting device includes an n-type cladding layer formed on a substrate, an active layer formed on the n-type cladding layer and including a well layer and a barrier layer, and a p-type cladding layer formed on the active layer. The well layer ...	05/29/2012
8179939	Light emitting and lasing semiconductor devices and methods A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adja...	05/15/2012
8179938	Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device A light-emitting element capable of increasing the amount of light emitted, a light-emitting device including the same, and a method of manufacturing the light-emitting element and the light-emitting device include a buffer layer having an uneven pattern formed ther...	05/15/2012
8170076	GaN laser element In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite t...	05/01/2012
8155161	Semiconductor laser A semiconductor laser includes a semiconductor laser region and a wavelength-monitoring region. The semiconductor laser region includes a first optical waveguide that includes a gain waveguide, the first optical waveguide having one end and another end opposite the ...	04/10/2012
8155162	Nitride semiconductor laser device and method of manufacturing the same A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semicond...	04/10/2012
8130803	Light emitting device A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, an...	03/06/2012
8121162	Nanocrystal structures A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a ...	02/21/2012
8111724	Temperature control device for optoelectronic devices Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semic...	02/07/2012
8085825	Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus inc...	12/27/2011
8068526	Semiconductor optical device A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru—InP layer on a conductive substrate is used. Secondly, a semi-insulating substra...	11/29/2011
8064492	Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having ...	11/22/2011
8064493	Surface emitting photonic device A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a tren...	11/22/2011
8040932	Semiconductor laser and method of manufacture The present application relates to a semiconductor laser, in particular such a laser which operates with substantially single longitudinal mode emission. The laser comprising a laser cavity, the laser further comprising a slot having an interface, characterized in t...	10/18/2011
8031752	VCSEL optimized for high speed data A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCS...	10/04/2011
8009711	Etched-facet ridge lasers with etch-stop A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etchin...	08/30/2011
7995632	Nitride semiconductor laser chip and fabrication method thereof In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage su...	08/09/2011
7995633	Method for producing a semiconductor laser, and semiconductor laser A method for producing a multiplicity of semiconductor lasers (100) comprising the steps of providing a carrier wafer (30), producing an assembly (70) by applying a multiplicity of semiconductor laser chips (4) to a top side (31) o...	08/09/2011
7970033	Semiconductor device and electronic equipment using same A semiconductor device includes: a first lead having an element mounting portion; a second lead located in a same plane as the first lead, with a predetermined space left between the first lead and the second lead; a molding encapsulant made of a resin for fixing th...	06/28/2011
7957442	Semiconductor optical device An edge-emitting semiconductor optical device comprises a first cladding layer, an active layer, and a second cladding layer. The first cladding layer is provided on a semiconductor substrate. The active layer is provided on the first cladding layer. The semiconduct...	06/07/2011
7953133	Light emitting and lasing semiconductor devices and methods A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adja...	05/31/2011
7949026	Group III nitride semiconductor laser A group III nitride semiconductor laser is provided that has a good optical confinement property and includes an InGaN well layer having good crystal quality. An active layer 19 is provided between a first optical guiding layer 21 and a second o...	05/24/2011
7929587	Semiconductor laser diode element and method of manufacturing the same A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farth...	04/19/2011
7924896	Optical semiconductor device An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semicond...	04/12/2011
7907651	Laser diode A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conduc...	03/15/2011
7903708	Nitride semiconductor light-emitting device and method for fabrication thereof A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106	03/08/2011
7903709	Semiconductor laser device and method of manufacturing the same A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from ...	03/08/2011
7903710	Nitride semiconductor light-emitting device A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the ...	03/08/2011
7903707	Nitride semiconductor light-emitting device A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the ...	03/08/2011
7899101	Semiconductor light emitting device and manufacturing method therefor A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of...	03/01/2011
7899100	GaN laser element In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite t...	03/01/2011
7894498	Semiconductor laser device and method for manufacturing the same A semiconductor laser device including a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front s...	02/22/2011
7889773	Semiconductor device A semiconductor device includes an InP substrate, an AlGaInAs-based first layer, an AlGaInAs-based second layer, an InGaAsP-based third layer, and an InGaAsP-based fourth layer. The first and second layers have compositions which are same or substantially same as ea...	02/15/2011
7885303	Nitride semiconductor laser device and method of manufacturing the same A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semicond...	02/08/2011
7885304	Nitride-based semiconductor laser device and method of manufacturing the same A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a ...	02/08/2011
7885302	Integrated tapered diode laser arrangement and method for producing it An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure wi...	02/08/2011
7876798	Nitride semiconductor laser device A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-...	01/25/2011
7869480	Semiconductor laser device In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corre...	01/11/2011

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Class 372/43.01 - Semiconductor