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| Number | Title | Issue Date |
| 8040931 | Dual layer color-center patterned light source A method of fabricating a color laser, comprising growing a first thin layer of ionic crystal on a substrate. The crystal can comprise many types of ionic crystals, such as sodium chloride or potassium chloride. A second thin layer of a different type of ionic cryst... | 10/18/2011 |
| 7286582 | Optical external cavities having brewster angle wedges This invention consists of an optical external cavity having specialized Brewster angle wedges. The external cavity apparatus utilizes several types of very high index of refraction wedges made from semiconductor and special glass materials. The apparatus limits the... | 10/23/2007 |
| 7281861 | Methods and apparatus for optical component identification Methods, apparatuses, and systems for obtaining identification information about fiber optic components and optical assemblies in a non-invasive manner. The present invention includes optical subassemblies (“OSAs”), and optical assemblies incorporating the OSAs ... | 10/16/2007 |
| 7273056 | Optical guidance system for invasive catheter placement Light from a small laser diode is inserted in a distal end of a catheter and passed through an optical fiber that is either included in the lumen or incorporated into the wall of an invasive catheter tube during manufacture. The light is selected to be of a waveleng... | 09/25/2007 |
| 7260127 | Dual layer color-center patterned light source A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of c... | 08/21/2007 |
| 7235819 | Semiconductor device having group III nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 06/26/2007 |
| 7224532 | Optical uses diamondoid-containing materials Novel optical devices based on diamondoid-containing materials are disclosed. Materials that may be fabricated from diamondoids included diamondoid nucleated CVD films, diamondoid-containing CVD films, molecular crystals, and polymerized materials. Devices that may ... | 05/29/2007 |
| 7212560 | Tunable external cavity laser diode using variable optical deflector Provided is a tunable external cavity laser diode using a variable optical deflector wherein the variable optical deflector, in which a refractive index varies according to an electrical signal, is arranged in a triangular shape between a concave diffraction grating... | 05/01/2007 |
| 7199390 | Window interface layer of a light-emitting diode This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer... | 04/03/2007 |
| 7178725 | Method for visualizing the input and display components of terminal equipment and corresponding terminal equipment The invention relates to a method for visualizing the input and display components of terminal equipment. The terminal equipment includes the said input component for controlling the operations of the terminal equipment and the display component. The terminal equipm... | 02/20/2007 |
| 7166869 | Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger ... | 01/23/2007 |
| 7110174 | Relay telescope for high power laser alignment system A laser system includes an optical path having an intracavity relay telescope with a telescope focal point for imaging an output of the gain medium between an image location at or near the gain medium and an image location at or near an output coupler for the laser ... | 09/19/2006 |
| 7097354 | Method of determining the temperature in a system comprising a molecular heater fraction and a molecular thermometer fraction The present invention is related to a method of determining the temperature in a system, said system comprising a molecular heater fraction and a molecular thermometer fraction, and to an integrated system for temperature determination and temporally and spatially r... | 08/29/2006 |
| 7082145 | Pulse laser resonator A laser is disclosed which includes a gain medium, a switch element, and a pulse controller. In one embodiment laser light of differing polarizations pass along respective paths and a pulsed laser output is generated via an electro-optical element. In another embodi... | 07/25/2006 |
| 7031352 | Pulse laser resonator A laser is disclosed which includes a gain medium, a switch element, and a pulse controller. In one embodiment laser light of differing polarizations pass along respective paths and a pulsed laser output is generated via an electro-optical element. In another embodi... | 04/18/2006 |
| 6983003 | III-V nitride semiconductor laser device A III-V nitride semiconductor laser device demonstrates an excellent emission characteristic without an increase in production cost. The refractive index of a p-side optical guiding layer is larger than that of an n-side guide layer. ... | 01/03/2006 |
| 6967984 | External cavity laser External cavity laser with reflector in optical wave guide, particularly HDBR laser, with an active element comprising a semiconductor optical amplifying cavity having a low-reflectivity facet (3), for example a Semiconductor Optical Amplifier (SOA) with a fa... | 11/22/2005 |
| 6953703 | Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 10/11/2005 |
| 6870868 | Organic laser having improved linearity An organic vertical cavity laser device includes a substrate; a bottom dielectric stack reflective to light over a predetermined range of wavelengths and being disposed over the substrate, and an organic active region for producing laser light. The device also inclu... | 03/22/2005 |
| 6853664 | Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element The semiconductor laser element comprises, from bottom to top, the p-AlxGa1−xAs upper clad layer, p-AlyGa1−yAs resistance control layer, and p-GaAs cap layer (where x>y>0.2). A portion of only the resistance control la... | 02/08/2005 |
| 6829273 | Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crys... | 12/07/2004 |
| 6798815 | High power semiconductor laser diode and method for making such a diode Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a ... | 09/28/2004 |
| 6795465 | Dual layer color-center patterned light source A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of c... | 09/21/2004 |
| 6687275 | Resonating cavity system for broadly tunable multi-wavelength semiconductor lasers A resonating cavity system of a tunable multi-wavelength semiconductor laser. The system has a laser, a collimating lens, a grating, a slit plate, and adjustable mirrors. The laser has two ends. The first end is coupled to the cavity, and the second end o... | 02/03/2004 |
| 6650575 | Programmable delay circuit within a content addressable memory An apparatus having an output register coupled to a content addressable memory (CAM) array. The output register may be configured to output data based on a delayed clock signal. A programmable delay circuit may be coupled to receive a reference clock sign... | 11/18/2003 |
| 6632757 | Transparent forsterite glass-ceramics A glass-ceramic which is substantially and desirably totally transparent, and which contains a predominant crystal phase of forsterite. The glass-ceramic is formed from precursor glasses having the following compositions, in weight percent on an oxide bas... | 10/14/2003 |
| 6606332 | Method and apparatus of color mixing in a laser diode system A color mixing system is proposed for use in an optical-fiber laser-diode assembly comprising at least two semiconductor laser diodes, optical fiber light input and output couples, a system of spatial superposition of laser beams of different wavelength w... | 08/12/2003 |
| 6549554 | Semiconductor laser element, semiconductor etchant, and method of fabricating the semiconductor laser element The semiconductor laser element comprises, from bottom to top, the p-Alx Ga1-x As upper clad layer, p-Aly Ga1-y As resistance control layer, and p-GaAs cap layer (where x>y>0.2). A portion of only the resistance... | 04/15/2003 |
| 6285700 | Semiconductor laser A semiconductor laser capable of producing a high optical output has a coating film applied to an exit end. The coating film has a refractive index (n1) which is large compared with the refractive index (neff) of a semiconductor wave... | 09/04/2001 |
| 6263002 | Tunable fiber Fabry-Perot surface-emitting lasers This invention provides compact, fixed-wavelength and tunable fiber-optic lasers comprising a gain medium, for example a semiconductor, half-cavity VCSEL, or an organic light emitting polymer, within a Fabry-Perot cavity wherein one of the mirrors forming... | 07/17/2001 |
| 5982797 | Room temperature stable color center laser, LiF:F2+ ** material, method of lasing The present invention is directed to a tunable, solid state laser utilizing room temperature, stable, color centers of LiF:F2+ ** material. Also disclosed is a method of lasing. An object of the present invention is to develop and op... | 11/09/1999 |
| 5889804 | Artificial color-center light source In a color-center light source, a color center is formed artificially. A predetermined single atom is removed from the surface of a defect-free ionic crystal so as to form a lattice defect. Optical transition of the defect is utilized so that it functions... | 03/30/1999 |
| 5583957 | Optical switch An optical switch includes a dual-core optical fibre coupler having waveguides which are erbium doped, silica-based fibre amplifiers. The waveguides are pumped by pump lasers which are used to control the mean differential gain of the waveguides to be zer... | 12/10/1996 |
| 5581499 | Micro information storage system A device for optically storing and retrieving information incorporating a cadmium fluoride crystal. Using focused ionizing radiation, patterns can be formed in the crystal by the creation of color centers and/or intrinsic luminescence quenched areas. The ... | 12/03/1996 |
| 5504767 | Doped diamond laser A solid state laser is provided having as the laser medium diamond and an optically active dopant element which is found to lase in the solid matrix. The dopant is preferably titanium, vanadium, chromium, iron, cobalt, nickel, zinc, zirconium, niobium, ca... | 04/02/1996 |
| 5487079 | Continuously tunable UV Ce:LiSAF solid state laser An ultraviolet solid state laser includes: (a) a laser cavity defined by a et of opposing mirrors, (b) a laser medium disposed in this laser cavity, where this medium includes a LiSrAIF6 (LiSAF) host material doped with enough cerium ions to pro... | 01/23/1996 |
| 5471493 | Sc2+ based active crystalline luminescent media for laser systems tunable in UV-visible spectral range Disclosed is the use of Sc2+ based active crystalline luminescent media for laser systems, tunable in the UV-visible spectral range. The crystalline media are Sc-doped alkali-earth-halide crystals such as: (1) alkali-earth-halide combinations, ... | 11/28/1995 |
| 5461635 | Solid state laser with superbroadband or control generation spectrum The subject invention relates to a new regime of lasing--superbroadband or pre-assigned spectral composition lasing. A new cavity construction and application of room temperature operable LiF color center crystals provide generation with a spectral width ... | 10/24/1995 |
| 5448582 | Optical sources having a strongly scattering gain medium providing laser-like action A gain medium is comprised of a multi-phase system wherein: a first phase is an electromagnetic radiation emission phase; a second phase is an electromagnetic radiation scattering phase; and a third phase is a transparent matrix phase. By example, the emi... | 09/05/1995 |
| 5271025 | Mode-locked upconversion laser source A laser source which operated under the principals of cooperative unconversion produces controllable optical pulses at wavelengths which are shorter than the wavelength of the laser energy which pumps the gain medium. The source is a solid-state laser whi... | 12/14/1993 |
