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Class 372/38.05 - Electrode


Subclass of Class 372 - Coherent light generators
Definition: Subject matter wherein the particular component circuitry
No. of patents: 97
Last issue date: 05/15/2012


1      
NumberTitleIssue Date
8179937High speed light emitting semiconductor methods and devices
A method for producing a high frequency optical signal component representative of a high frequency electrical input signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region of a first semiconductor t...
05/15/2012
8023543Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and optical information processing device
A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor ...
09/20/2011
7970031Q-switched laser with passive discharge assembly
Embodiments of the invention concern a passive discharge assembly comprising one or more substantially sharp electrode pins that are positioned proximate to a charged, insulating surface, such as the optical entrance and exit surface of a Q-switch crystal, e.g., lit...
06/28/2011
7643524Surface-emitting laser and laser projector
A surface emitting laser includes an active layer disposed on a semiconductor substrate, and a pair of upper and lower electrodes for injecting carriers into the active layer. The plane surface of the lower electrode is shaped into a star so that injection of curren...
01/05/2010
7593442Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system
In the semiconductor laser device of the present invention, a p-side electrode 115 formed on a second conductive type semiconductor layer group of the layers 108 through 114 includes an Ag layer 115a, a Pd layer 115b ...
09/22/2009
7496123VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device
A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first e...
02/24/2009
7466733Optical device chip, and optical module and method for manufacturing the same
An optical device chip includes: a first semiconductor layer of a first conductivity type; an optical layer that emits light or receives light formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the opt...
12/16/2008
7450620Electrode structure and optical semiconductor element
An electrode structure includes a first conductive layer, an insulation layer that covers at least a portion of a marginal area of an upper surface of the first conductive layer and has a first sloped section that slopes down toward the upper surface of the first co...
11/11/2008
7436874Laser device
According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the p...
10/14/2008
7369592Semiconductor laser device
A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge...
05/06/2008
7366212Alterable frequency coherent light generator
An alterable frequency coherent light generator for the generation of highly energy efficient coherent light, by means of a power supply connected to a four-lead capacitor, which is connected to a variable resistive device in series with a vacuumed bulb. The direct ...
04/29/2008
7366215Optical module
An optical module includes a stem; a first lead pin and a second lead pin for receiving differential signals, the first and second lead pins penetrating the stem; a mount block fixed to the stem; a laser diode having a pair of electrodes; a submount mounted on the m...
04/29/2008
7247992Ion accelerator arrangement
For an ion accelerator system having a special magnetic field structure with an alternating predominantly longitudinal and crosswise progression of the magnetic field, a geometry of the ionization chamber having a non-cylindrical shape of the chamber wall that is ad...
07/24/2007
7215697Matched impedance controlled avalanche driver
Controlled avalanche driver circuits and apparatuses for gas lasers. One embodiment typically delivers short, rapid, high voltage ionizing pulses in combination with an electric field whose magnitude is too low to sustain a normal glow discharge. The plasma is typic...
05/08/2007
7200318Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom
The invention comprises a composite material comprising a host material in which are incorporated semiconductor nanocrystals. The host material is light-transmissive and/or light-emissive and is electrical chargetransporting thus permitting electrical charge transpo...
04/03/2007
7179669Tunable semiconductor laser and method thereof
A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively ...
02/20/2007
7154926Laser diode module, laser apparatus and laser processing apparatus
Submount substrates are connected to both sides of a laser diode via hard solders. The lower submount substrate and a heat sink are connected together by a soft solder. The heat sink and a presser electrode are fixed with a predetermined gap therebetween via an insu...
12/26/2006
7092419Wavelength agile laser
An electric field that changes across space is synthesized, by applying voltage levels independent of one another at several locations. The independence in voltage levels allows the electric field that is synthesized to be made periodic or aperiodic. Such a synthesi...
08/15/2006
7079565Systems and methods utilizing laser discharge electrodes with ceramic spoilers
Arcing can be minimized in a discharge chamber of an excimer or molecular fluorine laser system by utilizing an improved electrode structure. An electrode structure can include at least one ceramic spoiler positioned near the discharge region of the electrode. An in...
07/18/2006
6987784Wavelength agile laser
A method and system are disclosed for synthesizing an electric field. In accordance with exemplary embodiments of the present invention, an electric field that changes across a distance in space is synthesized by applying voltage levels at several locations independ...
01/17/2006
6972400Multi-mode vibration sensor laser
A multimode remote vibration sensor. The inventive sensor (8) includes a mode locked laser transmitter (10); a receiver (30) adapted to detect signals transmitted by the laser (10) and reflected by an object (22) and a signal proce...
12/06/2005
6965623Semiconductor laser device and method of manufacturing the same
In the semiconductor laser device of the present invention, a P-type diffusion region 3A is disposed in an N− epitaxial layer 2 of a silicon submount 16, and an N-type diffusion region 4A is disposed in this P-type diffusion ...
11/15/2005
6965624Laser gas replenishment method
A method and apparatus is provided for stabilizing output beam parameters of a gas discharge laser by maintaining a molecular fluorine component of the laser gas mixture at a predetermined partial pressure using a gas supply unit and a processor. The molecular fluor...
11/15/2005
6907055Method and circuit for measuring the optical modulation amplitude (OMA) in the operating region of a laser diode
A method and circuit for measuring the optical modulation amplitude in the operating region of a laser diode is described. The method utilises two measurements of OMA, each measurement being related to the slope in a specific portion of the operating region of the p...
06/14/2005
6885686High coherent power, two-dimensional surface-emitting semiconductor diode array laser
A semiconductor laser is formed on a semiconductor substrate with an array of laterally spaced laser device elements each including a second order distributed feedback grating bounded by distributed Bragg reflector gratings and a central phase shift in the distribut...
04/26/2005
6850547Nitride based semiconductor laser device and method of fabricating the same
A semiconductor laser device is constructed by stacking an n-cladding layer, an n-optical guide layer, an MQW active layer, a p-cap layer, a p-optical guide layer, a p-cladding layer, an n-current blocking layer, and a p-contact layer in this order on one surface of...
02/01/2005
6782030Gas laser
The present invention relates to a gas laser with a high-voltage electrode 12 and a ground electrode 14, which electrodes 12, 14 are disposed relative to each other so as to form a discharge gap 16 between them, and with high voltage gene...
08/24/2004
6693938Discharge circuit for pulsed laser
A discharge circuit for pulsed laser 10 in which one connecting portion of a preionization capacitor Cpp is connected to a preionization electrode 4 and the other one connecting portion of the preionization capacitor Cpp is connected to a junction between...
02/17/2004
6674775Contact structure for semiconductor lasers
An improved electrical contact structure can be manufactured by plating a component of a first material such as molybdenum with a second material such as copper or silver. The first and second materials are selected to provide a desired effective coeffici...
01/06/2004
6671302Device for self-initiated UV pre-ionization of a repetitively pulsed gas laser
A device for use with a repetitively pulsed gas laser provides self-initiated UV preliminary ionization of the active volume of a laser, which has extended high-voltage and grounded electrodes disposed parallel to one another, to which peaking capacitors ...
12/30/2003
6636545Supersonic and subsonic laser with radio frequency excitation
Disclosed is a gas laser utilizing radio frequency excitation in the area of sonic or supersonic/subsonic transfer gas flow. The laser uses various types of gases and mixtures of gases as the active medium using radio frequency excitation. The gas is supp...
10/21/2003
6618422Preionization arrangement for a gas laser
A preionization device for a gas laser comprises an internal preionization electrode having a dielectric housing around it and an external preionization electrode displaced from the dielectric housing by a small gap. The dielectric housing includes two cy...
09/09/2003
6553049ArF laser with low pulse energy and high rep rate
A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse energies in the range of about 2 mJ to 5 mJ or greater with a full width half, maximum ba...
04/22/2003
6535540Discharge device for pulsed laser
In a preionization discharge circuit 10, when a switch SW14 is turned on, an electric current i10 from a constant current source 13 flows through a loop of a coil L12, en electrode 11A and the switch SW14. When it is assumed that an inductance of the coil...
03/18/2003
6442185All-metal, DC excited laser with RF pre-ionization
The present invention provides a novel and improved technique for achieving a combined RF-DC gas discharge in the optical cavity of the gas laser. The combination of the fast pre-ionization with the transverse RF discharge and the high power excitation wi...
08/27/2002
6404797Efficiency high power laser device
In an apparatus and method for generating high power laser radiation, the geometry of the resonant laser cavity defines a fundamental spatial or transverse cavity mode. A gain medium is disposed within the resonant cavity and an energy source energizes th...
06/11/2002
6229837Metal-vapor pulsed laser
The present invention provides a novel metal-vapor pulsed laser capable of being manufactured without using a large-sized laser tube or an expensive discharging circuit. The output and the efficiency of the laser can be improved economically and easily. T...
05/08/2001
6018537Reliable, modular, production quality narrow-band high rep rate F2 laser
The present invention provides a reliable modular production quality excimer laser capable of producing 10 mJ laser pulses in the range of 1000 Hz to 2000 Hz or greater. Replaceable modules include a laser chamber; a pulse power system comprised of three ...
01/25/2000
6018540Semiconductor light emitting element and optical fiber transmission system
Disclosed are a semiconductor light emitting element whose temperature characteristics are compensated for so as to provide a stable temperature characteristics in a temperature range from -40° C. to +85° C., and an optical fiber transmission system usi...
01/25/2000
5818858Device for producing an electric potential having a difference frequency of a self-mixed signal in a laser resonator
A device and method for measuring a difference frequency having a simple structure and utilizing optogalvanic effect for measuring a difference frequency when carbon dioxide laser light of a single wavelength is varied in frequency by a measuring object. ...
10/06/1998
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