Did You Know...
...that the Band-Aid Bandage was invented by a Johnson & Johnson employee whose wife had cut herself? Earl Dickson's wife was rather accident prone, so he set out to develop a bandage that she could apply without help. He placed a small piece of gauze in the center of a small piece of surgical tape, and what we know today as the Band Aid bandage was born!
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| Number | Title | Issue Date |
| 7405966 | Magnetic tunneling junction antifuse device An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft magnetic layer. The MRAM cells are all formed simultaneously and at least s... | 07/29/2008 |
| 7385842 | Magnetic memory having synthetic antiferromagnetic pinned layer A magnetic memory element includes a sense structure, a tunnel barrier adjacent the sense structure, and a synthetic antiferromagnet (SAF) adjacent the tunnel barrier on a side opposite the sense structure. The SAF includes an antiferromagnetic structure adjacent a ... | 06/10/2008 |
| 7378698 | Magnetic tunnel junction and memory device including the same A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layer... | 05/27/2008 |
| 7349234 | Magnetic memory array A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for r... | 03/25/2008 |
| 7339817 | Thermally-assisted switching of magnetic memory elements A magnetic memory element is written to by heating the memory element and applying at least one magnetic field to the memory element. ... | 03/04/2008 |
| 7337270 | Apparatus, system, and method for servicing a data storage device using work-in-process (WIP) maps An apparatus, system, and method are disclosed for servicing a data storage device. A service registration module registers a service process for servicing the stripe groups of a data storage device. A WIP map initialization module creates a WIP map for each stripe ... | 02/26/2008 |
| 7333361 | Biosensor and sensing cell array using the same A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array inc... | 02/19/2008 |
| 7324370 | System and method for determining the value of a memory element A method for determining memory element values may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to com... | 01/29/2008 |
| 7309888 | Spin based electronic device A thin film sensing device operates based on a spin polarized current. The spin device includes ferromagnetic layers characterized by different coercivities and/or magnetization states, and one or more low transmission barriers in between. The device is further conf... | 12/18/2007 |
| 7307876 | High speed low power annular magnetic devices based on current induced spin-momentum transfer A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fi... | 12/11/2007 |
| 7295465 | Thin film magnetic memory device reducing a charging time of a data line in a data read operation During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is comp... | 11/13/2007 |
| 7285835 | Low power magnetoelectronic device structures utilizing enhanced permeability materials Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming... | 10/23/2007 |
| 7282755 | Stress assisted current driven switching for magnetic memory applications A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using sp... | 10/16/2007 |
| 7264985 | Passive elements in MRAM embedded integrated circuits An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a ... | 09/04/2007 |
| 7233519 | Thin film magnetic memory device for conducting data write operation by application of a magnetic field A peripheral circuitry is provided adjacent to a memory array and conducts read and write operations from and to the memory array. A power supply voltage line and a ground line for supplying an operating voltage to the peripheral circuitry supply a power supply volt... | 06/19/2007 |
| 7224630 | Antifuse circuit An antifuse circuit provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse has been previously programmed to a low resistance state in response to a program voltage. A sense amplifier provides the resistance state sign... | 05/29/2007 |
| 7224634 | Hardware security device for magnetic memory cells The present invention provides a special structure of magnetic elements, e.g. MRAM elements, as a security device for IC's containing magnetic memory cells. In an example embodiment, the structure may comprise a combination of two or more associated magnetic element... | 05/29/2007 |
| 7218483 | Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is insert... | 05/15/2007 |
| 7209382 | Magnetic random access memory In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generat... | 04/24/2007 |
| 7196386 | Memory element and memory device A memory element wherein a spin conduction layer having a sufficient spin coherence length and a uniform spin field can be obtained, and thereby practical use is attained and a memory device are provided. A spin conduction layer (paramagnetic layer) (24) is a... | 03/27/2007 |
| 7184302 | Highly efficient segmented word line MRAM array In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been ove... | 02/27/2007 |
| 7177179 | Magnetic memory, and its operating method A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulati... | 02/13/2007 |
| 7173847 | Magnetic storage cell A horizontally disposed elliptical or rectangular magnetic memory cell includes at least two conductive lines to carry current and a magnetic element disposed between the conductive lines. The current through the conductive lines induces a magnetic field, such that ... | 02/06/2007 |
| 7173841 | Magnetic memory array A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for r... | 02/06/2007 |
| 7170778 | High speed low power magnetic devices based on current induced spin-momentum transfer The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be ... | 01/30/2007 |
| 7154772 | MRAM architecture with electrically isolated read and write circuitry A magnetoresistive random access memory (MRAM) has separate read and write paths. This reduces the peripheral circuitry by not requiring switching between read and write functions on a particular line. By having the paths dedicated to either read signals or write si... | 12/26/2006 |
| 7154776 | Thin film magnetic memory device writing data with bidirectional current An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write... | 12/26/2006 |
| 7149948 | Manufacturing test for a fault tolerant magnetoresistive solid-state storage device A fault-tolerant magnetoresistive solid-state storage device (MRAM) in use performs error correction coding and decoding of stored information, to tolerate physical defects. At manufacture, the MRAN device is tested to confirm that each set of storage cells is suita... | 12/12/2006 |
| 7149949 | Method for error correction decoding in a magnetoresistive solid-state storage device A magnetoresistive solid-state storage device (MRAM) employs error correction coding (ECC) to form ECC encoded stored data. In a read operation, a set of test cells in a test row are used to predict failures amongst a set of cells of interest storing a block of ECC ... | 12/12/2006 |
| 7136298 | Magnetic random access memory array with global write lines A random access memory array includes random access memory elements arranged in a rows and columns. Each row is divided into a plurality of row groups of elements and each column is divided into a plurality of column groups of elements. The elements in each row grou... | 11/14/2006 |
| 7132707 | Magnetic random access memory array with proximate read and write lines cladded with magnetic material An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that ... | 11/07/2006 |
| 7123498 | Non-volatile memory device MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC include... | 10/17/2006 |
| 7116575 | Architectures for CPP ring shaped (RS) devices A current-perpendicular-to-plane (CPP) ring-shaped (RS) magnetoresistive random access memory (MRAM) element is provided in several embodiments including operational functionality of static read (SR) and dynamic read (DR). According to an embodiment, a memory elemen... | 10/03/2006 |
| 7112354 | Electron spin mechanisms for inducing magnetic-polarization reversal An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-paralle... | 09/26/2006 |
| 7113422 | Method for optimizing MRAM circuit performance A method to adjust an operating parameter of a magnetoresistive random access memory having a tunable circuit, such as a bias control circuit, provides for measuring the operating parameter, such as a word current or sense current, of the magnetoresistive random acc... | 09/26/2006 |
| 7107507 | Magnetoresistive solid-state storage device and data storage methods for use therewith A magnetoresistive solid-state storage device (MRAM device) uses storage cells 16 arranged in many arrays 10 to form a macro-array 2. For fast access times and to reduce exposure to physical failures, each unit of data (e.g. a sector) is stored ... | 09/12/2006 |
| 7099184 | Magnetic random access memory An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a... | 08/29/2006 |
| 7095650 | Magnetic memory device and method for production thereof A magnetic memory device in which the memory cell of MRAM is reduced in size, and a method for producing the magnetic memory device are provided. The lower wiring is formed below the word line. The connecting hole and the plug connected to it are provided. The readi... | 08/22/2006 |
| 7082045 | Offset compensated sensing for magnetic random access memory An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential amplifier. The compensation circuit of the differential amplifier includes a ... | 07/25/2006 |
| 7075815 | Spin driven resistors and nanogates A spin driven resistor including a magnetic body whose resistance increases due to resonance when subjected to an externally applied magnetic field while in the presence of an externally applied electromagnetic field is presented. The spin driven resistor has applic... | 07/11/2006 |
