|7289348||Reverse coupling effect with timing information|
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in neighboring floating gates (or other neighboring charge stori...
|5812441||MOS diode for use in a non-volatile memory cell|
A variable resistance material-based memory cell is disclosed for use in an electronic memory. The memory cell includes a MOS diode for delivering large amounts of current to the variable resistance material, as needed during programming of the memory cel...
|4891683||Integrated SCR current sourcing sinking device|
This disclosure relates to a programmable write-once, read-only semiconductor memory array which has an improved current source for each bit line and an improved current sink for each Word line. This programmable write-once, read-only semiconductor memory...