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| Number | Title | Issue Date |
| 7378698 | Magnetic tunnel junction and memory device including the same A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layer... | 05/27/2008 |
| 7365354 | Programmable resistance memory element and method for making same A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making t... | 04/29/2008 |
| 7336515 | Method of manipulating a quantum system comprising a magnetic moment A method for manipulating a quantum system comprises at least one mobile charge carrier with a magnetic moment. The method comprises the steps or acts of applying magnetic field to the charge carrier. The magnetic is spatially non-homogeneous. The method also compri... | 02/26/2008 |
| 7332781 | Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63... | 02/19/2008 |
| 7329935 | Low power magnetoresistive random access memory elements Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier ... | 02/12/2008 |
| 7324386 | Reliable method for erasing a flash memory A method for erasing a flash memory group is provided, which comprises the following steps. (a) Apply a erase (ERS) pulse to a first subset of the group. (b) Perform one of a soft program verification (SPGMV) and a tight soft program verification (TSPGMV) on the fir... | 01/29/2008 |
| 7295465 | Thin film magnetic memory device reducing a charging time of a data line in a data read operation During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is comp... | 11/13/2007 |
| 7193889 | Switching of MRAM devices having soft magnetic reference layers A magnetic random access memory (MRAM) that includes an array of magnetic memory cells and a plurality of word and bit lines connecting columns and rows of the memory cells so that the memory cells are positioned at cross-points of the word and bit lines. Each memor... | 03/20/2007 |
| 7129098 | Reduced power magnetoresistive random access memory elements Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier ... | 10/31/2006 |
| 7123498 | Non-volatile memory device MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC include... | 10/17/2006 |
| 7002820 | Semiconductor storage device A semiconductor storage device including a tip electrode, a media electrode and a storage media. The storage media has a storage area configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a curr... | 02/21/2006 |
| 6961263 | Memory device with a thermally assisted write A memory device includes an array of magnetic storage cells. Each magnetic storage cell in the array includes a set of conductors used to write data to a storage cell and a second set of conductors used to heat the magnetic storage cell and read data from the magnet... | 11/01/2005 |
| 6943394 | Magnetic storage apparatus and manufacturing method thereof Problems in reliability and cross-talk of MRAM, which are intrinsically ascribable to the structure thereof, are solved at the same time. In a magnetic storage device (1) having write word lines (11) and bit lines (12) formed so as to cross whil... | 09/13/2005 |
| 6940748 | Stacked 1T-nMTJ MRAM structure This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher ... | 09/06/2005 |
| 6940750 | Magnetic memory, magnetic memory array, method for fabricating a magnetic memory, method for recording in a magnetic memory and method for reading out from a magnetic memory A magnetic memory includes a magnetic substance composed of a disc-shaped first magnetic layer and a ring-shaped second magnetic layer which is formed on the first magnetic layer. ... | 09/06/2005 |
| 6826076 | Non-volatile memory device MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC include... | 11/30/2004 |
| 6795336 | Magnetic random access memory The present invention discloses a magnetic random access memory for reading two or more data, by sensing the current flowing into source and drain regions. The current is regulated by the amount of a current flowing through an MRJ in an MRAM cell according to a word... | 09/21/2004 |
| 6791857 | Method and article for concentrating fields at sense layers A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the c... | 09/14/2004 |
| 6788569 | Thin film magnetic memory device reducing a charging time of a data line in a data read operation During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is comp... | 09/07/2004 |
| 6744651 | Local thermal enhancement of magnetic memory cell during programming A problem associated with the programming of MRAM (magnetic random access memory) has been that the required current is orders of magnitude larger than that needed for many other memory devices such as SRAMs or DRAMs. This problem has been overcome by adding heating... | 06/01/2004 |
| 6661688 | Method and article for concentrating fields at sense layers A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor,... | 12/09/2003 |
| 6657314 | Manipulation-proof integrated circuit The integrated circuit has a circuit with information that is protected by a covering shielding level. A network with a large number of nodes is formed in the shielding level. Some of the nodes are linked to a comparator for a nominal-actual comparison. T... | 12/02/2003 |
| 6438025 | Magnetic memory device The invention described herein defines a system and a method for selectively controlling the sensitivity of a region of a magnetoresistive element to an incident magnetic field, by applying an external magnetic field to the magnetoresistive element. A num... | 08/20/2002 |
| 6331944 | Magnetic random access memory using a series tunnel element select mechanism A non-volatile memory array includes first and second pluralities of electrically conductive traces formed on a substrate. The second plurality of electrically conductive traces overlap first plurality of traces at a plurality of intersection regions. Eac... | 12/18/2001 |
| 6166944 | Data storing apparatus including integrated magnetic memory cells and semiconductor devices A data storing apparatus in which a magnetic storing means includes magnetic memory cells for memorizing data of a first value or a second value. Input data is written to the memory cells separately or simultaneously by electromagnetic induction. One or m... | 12/26/2000 |
| 6005800 | Magnetic memory array with paired asymmetric memory cells for improved write margin A nonvolatile magnetic memory array uses magnetic memory cells that are formed in two types of shapes. The cells lie at the intersections of rows and columns of electrically conductive lines, which serve as the conductive paths for the write currents used... | 12/21/1999 |
| 5898605 | Apparatus and method for simplified analog signal record and playback A complete voice record and playback system capable of being powered by a single 1.8 VDC battery is operated in either stand-alone or CPU modes. In the stand-alone mode, two-button operation controls record, play, and memory erase functions. In CPU mode, ... | 04/27/1999 |
| 5754465 | No physical movement component record reproduce device and flat display device A non-physical movement component recording and reproducing device produces a pair of special waves with special waveforms that form a special stationary waveform. An electrically-conducting media contains three overlaid layers, a first layer contains the... | 05/19/1998 |
| 5329486 | Ferromagnetic memory device A ferromagnetic memory circuit (10) and a ferromagnetic memory device (15) which has a substrate (42). Within the substrate (42), a first current electrode (44) and a second current electrode (46) are formed. A control electrode (50) is formed to control ... | 07/12/1994 |
| 4772505 | Magnetic bubble memory element The inclination angle, in the conductor pattern end portion of a magnetic bubble memory element having a bubble diameter of up to 1.2 μm, can be remarkably reduced by employing a polymer resin, having fluidity in a curing process, as the insulation film ... | 09/20/1988 |
| 4755430 | Magnetic bubble memory device A hybrid magnetic bubble memory device comprising soft magnetic material propagation tracks and ion-implanted propagation tracks. In the soft magnetic material propagation track region, a layer made of a heat-resistant polymer was provided as an interlami... | 07/05/1988 |
| 4701385 | Ion-implanted magnetic bubble device and a method of manufacturing the same In a magnetic bubble device, a strain layer formed on the surface of a magnetic bubble garnet film by ion-implantation is required to have anisotropy field of great strength in the in-plane direction for driving magnetic bubbles. For preventing the effect... | 10/20/1987 |
| 4622264 | Garnet film for magnetic bubble memory element A garnet film for use in magnetic bubble devices that supports magnetic bubbles with a bubble diameter of 0.4 micron or less. The curie temperature can be made over 240° C., and the garnet film used is suitable for ion implanted devices.... | 11/11/1986 |
| 4568618 | Magnetic bubble memory chip In order for the temperature dependence of the strip out field of a magnetic garnet crystal film (54) to match the temperature dependence of the residual magnetization of a permanent magnet (56) for applying a bias magnetic field in a magnetic bubble memo... | 02/04/1986 |
| 4532180 | Garnet film for ion-implanted magnetic bubble device The invention relates to a garnet film for an ion-implanted device characterized in that the quantity of Fe is increased and a predetermined quantity of Gd is added. The garnet film of the invention has a sufficiently high Curie temperature without sacrif... | 07/30/1985 |
| 4520460 | Temperature stable magnetic bubble compositions Certain Tm-containing iron garnet compositions provide layers having desirably high values of Curie temperature and magnetic anisotropy and permit the fabrication of devices having 1.2 μm diameter magnetic bubbles. The compositions, based on Tm-substitut... | 05/28/1985 |
| 4468438 | Garnet epitaxial films with high Curie temperatures The use of vanadium on the tetrahedral site of a garnet material together with a suitable charge compensating ion, such as Ca2+, results in advantageous materials. In particular, very high Curie temperatures, e.g., up to 524 degrees C., in film... | 08/28/1984 |
| 4460412 | Method of making magnetic bubble memory device by implanting hydrogen ions and annealing A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magne... | 07/17/1984 |
| 4454206 | Magnetic device having a monocrystalline garnet substrate bearing a magnetic layer Magnetic device having a monocrystalline substrate bearing a magnetic layer, said substrate having a composition on the basis of rare earth metal gallium garnet of the general formula ##STR1## wherein A=gadolinium and/or samarium and/or neodym and/or... | 06/12/1984 |
| 4435484 | Device for propagating magnetic domains A device for propagating magnetic domains includes a monocrystalline nonmagnetic substrate of a rare earth gallium garnet bearing a layer of an iron garnet capable of supporting local enclosed magnetic domains. The iron garnet layer is grown in compressio... | 03/06/1984 |
