Class 365/217 - Electron beam

Subclass of Class 365 - Static information storage and retrieval
Definition: Subject matter in which the read/write circuit
No. of patents: 30
Last issue date: 03/11/2008

Number	Title	Issue Date
7342817	System and method for writing data using an electron beam A system for writing data using an electron beam to change the structure of a small section of a storage medium and includes at least one focused electron beam source. The duration of a write cycle of the focused electron beam source is controlled at least in part o...	03/11/2008
7085151	Storage device having a resistance measurement system A storage device and a storage system employing the storage device. In one embodiment, the storage device comprises an electron emitter and a storage medium comprising an information layer having at least a first state and a second state for storing information. The...	08/01/2006
7049158	Method of manufacturing an emitter A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the pro...	05/23/2006
6987722	Data storage devices with wafer alignment compensation Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Dat...	01/17/2006
6947311	Two-dimensional structural transition controlled by an electric field, memory storage device thereof, and method of making a memory storage device This invention relates to the controlled two-dimensional structural transition of a dipole monolayer at a metal, semi-conducting or insulating interface. The dipole monolayer consists of objects/molecules with a permanent electric dipole moment. A transition between...	09/20/2005
6912148	Magnetic semiconductor memory and the reading method using spin-polarized electron beam A system for writing data to and reading data from a magnetic semiconductor memory utilizing a spin polarized electron beam. The magnetic semiconductor memory comprises a plurality of storage locations, each storage location includes a magnetic material and a layer ...	06/28/2005
6806488	Tunneling emitters and method of making An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed...	10/19/2004
6700853	Data storage devices with wafer alignment compensation Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data cl...	03/02/2004
6542400	Molecular memory systems and methods A molecular memory system that includes a protective layer that is disposed over a molecular recording layer is described. The protective layer enables a scanning probe to write information to and read information from a molecular memory element by direct...	04/01/2003
6501676	Accessing of two-terminal electronic quantum dot comprising static memory A method of storing and accessing data utiliaing two-terminal static memory cells made from semiconductor quantum dots. Each quantum dot is approximately 10 nm in dimension so as to comprise approximately 1000-10,000 atoms, and each memory cell has in a v...	12/31/2002
6392914	Storage device encompassing a diffusion process and a dissipation process of information carriers and storage method thereof A nonlinear coupling oscillator array is configured in such a manner that, for example, two layers in each of which a number of quantum dots as oscillators are arranged two-dimensionally are laid one on another. Adjacent quantum dots in the upper layer ha...	05/21/2002
6335899	Compensation capacitance for minimizing bit line coupling in multiport memory A compensation capacitance is utilized in a multiport memory device to compensate for the effect of bit line coupling capacitance. A first compensation capacitance is applied between a read bit line and a write bar bit line, and a second compensation capa...	01/01/2002
6081470	All optics type semiconductor image storage apparatus, and all optics type semiconductor logical operation apparatus An all optics type semiconductor image storage apparatus includes a superlative semiconductor device. The superlattice semiconductor device includes a superlattice layer which is formed by alternately laminating a barrier layer and a quantum well layer. T...	06/27/2000
5604706	Data storage medium for storing data as a polarization of a data magnetic field and method and apparatus using spin-polarized electrons for storing the data onto the data storage medium and reading the stored data therefrom A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendi...	02/18/1997
5355127	Method and apparatus for transferring information by utilizing electron beam In a method and apparatus for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal f...	10/11/1994
5210714	Distance-controlled tunneling transducer and direct access storage unit employing the transducer A distance-controlled tunneling transducer comprises a plurality of tunnel tips arranged in an array at a tunneling distance from an electrically conductive surface of a storage medium. Each tip is attached to a respective cantilever beam permitting the d...	05/11/1993
5049462	Reading out information stored in thin polymer layers Information stored in a thin polymer layer is read out in a process wherein information introduced into a thin polymer layer on a metallic or semiconductor layer by electromagnetic or particle rays which produce a permanent change in the properties of the...	09/17/1991
4867535	Exposure arrangement for the production of masks An exposure arrangement for use in a computer-aided design system to produce masks. The arrangement includes a cathode-ray tube which produces an image of the mask on the screen of the tube, and an optical system which projects the image of the mask onto ...	09/19/1989
4831614	Direct access storage unit using tunneling current techniques The storage unit comprises an array of tunnel tips (13) arranged at tunneling distance from a recording surface (2a) of a storage medium (2) which is capable of permitting digital information to be written or read through variations of the tunneling curre...	05/16/1989
4760567	Electron beam memory system with ultra-compact, high current density electron gun A rapid random accessed electron beam memory system comprises a disc mounted for rotation and supporting an information storage medium. An electron gun is mounted for movement across the disc. The gun has ultra-compactness and extremely low mass, yet is c...	07/26/1988
4534016	Beam addressed memory system A beam-addressed memory system for digital memory recording and reading which comprises an electron beam generating and focusing subsystem, an electron detecting subsystem, electronic control and interface circuit means, and a storage medium consisting es...	08/06/1985
4471270	Particle-impact localizing device, a cathode-ray oscilloscope and a pick-up tube comprising such a device This device comprises several charge-transfer shift registers integrated on the same semiconductor substrate and disposed one above the other along the axis Oy. The charge-transfer electrodes are common to all the registers and each package of charges inj...	09/11/1984
4450537	Monolithically integrated read-only memory A monolithically integrated read-only memory has a plurality of word lines, read lines which cross the word lines to form intersections, and field effect transistors connected to the read and word lines, these transistors being selectable via the word lin...	05/22/1984
4147988	Channel multiplier plate CRT scan converter and scan conversion method An electron beam scan conversion method and apparatus based on the gain recovery or "dead" time characteristic of channel electron multipliers. The waveform of an electrical signal is written on the input face of a channel multiplier plate with an electro...	04/03/1979
4146930	Thermoplastic optical recording system An apparatus for and a method of optically recording or writing data into a thermoplastic layer is disclosed. The recording medium is fabricated as an integral part of the face of a cathode ray tube (CRT) and includes a layer of thermoplastic material tha...	03/27/1979
4123797	Flying spot pattern storage system A storage system is provided in which digital numbers are read into a memory by periodically sampling a pair of analog input signals and in which the memory is scanned in timed relation to the signal sampling and also in timed relation to the scanning of ...	10/31/1978
4123798	High density beam-accessed memory with reference target This invention relates to apparatus and methods for providing a high-density memory for electrical data and more particularly, to such a memory wherein data are represented by patterns of charge written and read by electron beam means at addressed locatio...	10/31/1978
4122530	Data management method and system for random access electron beam memory A data recording and readback subsystem for digital computer systems employing random access electron beam memories having an electron beam write/read apparatus for recording data to be stored on a recording member that is subject to fatigue in the eventu...	10/24/1978
4097848	Readout unit for data stored in a random-access memory and presented on a raster scan display in accordance with a given line pattern The invention relates to a readout unit for reading out and displaying at a magnification on a picture screen a fraction of the data stored in a random-access memory consisting of N × N simultaneously accessible submemories. The number of picture element...	06/27/1978
4013968	Feedback controlled storage tube devices The combination of a storage tube and a feedback circuit operatively intercoupled such that as data is read from the storage tube the level of stored charge on each incremental area of the dielectric of the tube's target is sensed and the potential betwee...	03/22/1977

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Class 365/217 - Electron beam