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Class 365/211 - Temperature compensation


Subclass of Class 365 - Static information storage and retrieval
Definition: Subject matter where the circuit used is for compensating
No. of patents: 328
Last issue date: 05/29/2012


1                  
NumberTitleIssue Date
8189417Semiconductor memory device
A semiconductor memory device uses a magnetic tunnel junction device (MTJ) and includes a memory cell connected between a first driving line and a second driving line and configured to store data having a data state that is determined based on a direction of a curre...
05/29/2012
8169846Refresh control circuit and method for semiconductor memory apparatus
A refresh control circuit of a semiconductor memory apparatus includes: a variable oscillator configured to generate a room-temperature oscillation signal and a limit-temperature oscillation signal in response to a temperature state signal; a cycle selector configur...
05/01/2012
8139432Variable resistance memory device and system thereof
A nonvolatile memory device comprising: a plurality of memory banks, each of which operates independently and includes a plurality of resistance memory cells, each cell including a variable resistive element having a resistance varying depending on stored data; a pl...
03/20/2012
8134881Thermally stable reference voltage generator for MRAM
A non volatile memory device comprises memory cells such as MRAM cells, reading circuits and a reference cell for generating a reference for use by the reading circuits, and can determine if the reference is degraded by thermal instability. This can help reduce a da...
03/13/2012
8116160Methods of detecting a shift in the threshold voltage for a nonvolatile memory cell
A nonvolatile memory device is operated by programming sample data in the memory device for verification using verify voltage levels derived from an ideal verify voltage Vv associated with a particular temperature range, performing read verify operations on the samp...
02/14/2012
8107309Bias temperature instability-influenced storage cell
In a method of using a memory cell employing a field effect transistor (FET), the FET is heated to a first temperature sufficient to support bias temperature instability in the FET. The bit line is driven to a high voltage state. The word line is driven to a predete...
01/31/2012
8081532Semiconductor device having variable parameter selection based on temperature and test method
A semiconductor device includes a first temperature sensing circuit, a multiplexer, and an output circuit. The first temperature sensing circuit can be configured to provide a first temperature indication based on a first temperature threshold value. The first tempe...
12/20/2011
8081531Temperature sensor capable of reducing test mode time
A temperature sensor includes a temperature sensing unit for producing a sensing level by sensing an internal temperature in a semiconductor memory device, a reference level generating unit for setting up a reference level by selecting one of a plurality of referenc...
12/20/2011
8045411Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh
A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode ...
10/25/2011
8018787Semiconductor memory device capable of controlling a supply current of a memory cell and method thereof
A semiconductor memory device uses a magnetic tunnel junction device (MTJ) and includes a memory cell connected between a first driving line and a second driving line and configured to store data having a data state that is determined based on a direction of a curre...
09/13/2011
8004919Methods and apparatus for extending the effective thermal operating range of a memory
Apparatus and systems are provided for thermal regulation of a memory integrated circuit (“IC”). The apparatus and systems may include a thermal sensor on a memory IC, and a heating element coupled to the thermal sensor. The heating element is adapted to heat th...
08/23/2011
8004917Bandgap voltage and temperature coefficient trimming algorithm
A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where t...
08/23/2011
8004918Memory cell heating elements
The present disclosure relates to the heating of memory cells. ...
08/23/2011
7995414Semiconductor memory device, method of operating semiconductor memory device, and memory system
A semiconductor memory device is provided which comprises: a sense amplifier; and a bit line, wherein the disconnection of the sense amplifier from the bit line is performed in a data read operation when temperature in the semiconductor memory device is at a first t...
08/09/2011
7990793Semiconductor device having single-ended sensing amplifier
A semiconductor device has a DRAM cell configured from an information charge accumulating capacitor and a memory cell selecting transistor, the threshold voltage value of a MOS transistor that constitutes a sense circuit is monitored, and the monitored threshold vol...
08/02/2011
7986579Memory device and method thereof
A device, and corresponding method, includes a temperature dependent bias generator to generate a voltage that is applied to a control gate of a sense amplifier. By applying the temperature dependent bias signal to the sense amplifier, a substantially temperature in...
07/26/2011
7978556On-chip temperature sensor
A temperature invariant reference voltage and a temperature variant physical quantity, such as a voltage or current, are generated. The temperature variant physical quantity changes in response to a temperature of the integrated circuit. A temperature sensor circuit...
07/12/2011
7940591Methods and apparatuses for controlling fully-buffered dual inline memory modules
Methods and apparatuses are presented for controlling a fully buffered dual inline memory module. In one embodiment, the memory module may include at least two memory chips, a buffer coupled to the at least two memory chips (the buffer serially receiving data to be ...
05/10/2011
7929366Temperature detector in an integrated circuit
A temperature detector in an integrated circuit comprises a temperature-dependent voltage generator, a ring oscillator, a timer and a clock-driven recorder. The temperature-dependent voltage generator is configured to generate at least one temperature-dependent volt...
04/19/2011
7911864Semiconductor memory device
A semiconductor memory device includes a memory cell array in which a plurality of memory cells are arranged in a matrix, a read unit which reads out data from the memory cells in the memory cell array, a write unit which writes data in the memory cells in the memor...
03/22/2011
7911865Temperature compensation of memory signals using digital signals
A temperature sensor generates a digital representation of the temperature of the integrated circuit. A logic circuit reads the digital temperature and generates a multiple bit digital representation of an operational voltage and a multiple bit digital representatio...
03/22/2011
7907462Core voltage discharger and semiconductor memory device with the same
A core voltage discharger is capable of adjusting an amount of a current discharged according to temperature. The discharger for decreasing a level of a predetermined voltage receives temperature information from an on die thermal sensor and discharges a different a...
03/15/2011
7889586Circuit and method for retrieving data stored in semiconductor memory cells
A circuit comprises at least one memory cell adapted to store data in terms of values of an electrical characteristic thereof, which exhibits a variability with temperature according to a first variation law; a voltage generator is provided for generating a voltage ...
02/15/2011
7885132Semiconductor memory device enhancing reliability in data reading
An internal voltage generating circuit generates and supplies a boosted voltage higher than an internal power supply voltage, as an operating power supply voltage, to a sense amplifier in a read circuit for reading data of a memory cell. A bit line precharge current...
02/08/2011
7881139Semiconductor memory device with temperature sensing device and operation thereof
A semiconductor memory device includes a thermosensor that senses present temperatures of the device and confirms whether the temperature values are valid. The thermosensor includes a temperature sensing unit, a storage unit and an initializing unit. The temperature...
02/01/2011
7864614Semiconductor memory device
A semiconductor memory device includes a memory cell array which includes a plurality of memory cells which are arrayed in a matrix at intersections between a plurality of word lines and a plurality of bit lines and a power supply circuit which includes a first band...
01/04/2011
7864613Thermal code transmission circuit and semiconductor memory device using the same
Disclosed are a thermal code transmission circuit and a semiconductor memory device using the same. The thermal code transmission circuit includes a select signal generator which generates a select signal in response to a first enable signal, a level signal generato...
01/04/2011
7843752Circuit and method for controlling refresh periods in semiconductor memory devices
An integrated circuit memory device includes a refresh control circuit that generates an internal memory refresh command signal having a period that is changed relative to a period of an external memory refresh command signal received by the memory device. This chan...
11/30/2010
7821860Stable temperature adjustment for refresh control
A refresh control circuit and method generates a refresh signal in response to one of a plurality of clock signals and a temperature signal. The clock signals and temperature signal may be synchronized to prevent an incomplete refresh operation at a trip point of a ...
10/26/2010
7813204Method and system for memory thermal load sharing using memory on die termination
Memory component temperature information is used to implement a method for ODT (on die termination) thermal load management. A respective temperature of a plurality of memory components are accessed, and based on this temperature, an ODT cycle is directed to a first...
10/12/2010
7804729Temperature compensation circuit and method for sensing memory
A temperature compensation circuit includes a voltage generator, a comparator and an emulation cell array. The voltage generator provides a predetermined voltage and a reference voltage. The comparator has a first terminal for receiving the predetermined voltage, an...
09/28/2010
7773446Methods and apparatus for extending the effective thermal operating range of a memory
Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response ...
08/10/2010
7768856Control of temperature slope for band gap reference voltage in a memory device
Systems and/or methods are presented that can facilitate regulating performance of operations in a memory device based on controlling an operating temperature slope associated with the memory device. A regulator component can facilitate controlling the operating tem...
08/03/2010
7760569Semiconductor memory device with temperature control
A memory device in a semiconductor substrate includes at least one temperature sensor to provide a temperature dependent signal and at least one circuit to dissipate heat in response to a control signal. A control circuit is coupled to the at least one circuit and i...
07/20/2010
7760570Semiconductor device having variable parameter selection based on temperature and test method
A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the lik...
07/20/2010
7755965Temperature dependent system for reading ST-RAM
A memory device that includes at least one memory cell, the memory cell includes: a magnetic tunnel junction (MTJ); and a transistor, wherein the transistor is operatively coupled to the MTJ; a bit line; a source line; and a word line, wherein the memory cell is ope...
07/13/2010
7733730Negative voltage detection circuit and semiconductor integrated circuit
A negative voltage detection circuit including first and second MOS transistor circuits configured to change a dimension size of a transistor based on a control signal, a first comparator circuit, a gate electrode of the second MOS transistor circuit commonly couple...
06/08/2010
7715263Semiconductor memory device
A semiconductor memory device includes a memory cell array and a voltage generation circuit for generating a voltage applied to the memory cell array, in which a plurality of drive MOS transistors having different width dimensions are selectively connected in parall...
05/11/2010
7656734Methods and apparatus for extending the effective thermal operating range of a memory
Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response ...
02/02/2010
7630265On-chip temperature sensor
A temperature invariant reference voltage and a temperature variant physical quantity, such as a voltage or current, are generated. The temperature variant physical quantity changes in response to a temperature of the integrated circuit. A temperature sensor circuit...
12/08/2009
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