...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Number | Title | Issue Date |
| 8189417 | Semiconductor memory device A semiconductor memory device uses a magnetic tunnel junction device (MTJ) and includes a memory cell connected between a first driving line and a second driving line and configured to store data having a data state that is determined based on a direction of a curre... | 05/29/2012 |
| 8169846 | Refresh control circuit and method for semiconductor memory apparatus A refresh control circuit of a semiconductor memory apparatus includes: a variable oscillator configured to generate a room-temperature oscillation signal and a limit-temperature oscillation signal in response to a temperature state signal; a cycle selector configur... | 05/01/2012 |
| 8139432 | Variable resistance memory device and system thereof A nonvolatile memory device comprising: a plurality of memory banks, each of which operates independently and includes a plurality of resistance memory cells, each cell including a variable resistive element having a resistance varying depending on stored data; a pl... | 03/20/2012 |
| 8134881 | Thermally stable reference voltage generator for MRAM A non volatile memory device comprises memory cells such as MRAM cells, reading circuits and a reference cell for generating a reference for use by the reading circuits, and can determine if the reference is degraded by thermal instability. This can help reduce a da... | 03/13/2012 |
| 8116160 | Methods of detecting a shift in the threshold voltage for a nonvolatile memory cell A nonvolatile memory device is operated by programming sample data in the memory device for verification using verify voltage levels derived from an ideal verify voltage Vv associated with a particular temperature range, performing read verify operations on the samp... | 02/14/2012 |
| 8107309 | Bias temperature instability-influenced storage cell In a method of using a memory cell employing a field effect transistor (FET), the FET is heated to a first temperature sufficient to support bias temperature instability in the FET. The bit line is driven to a high voltage state. The word line is driven to a predete... | 01/31/2012 |
| 8081532 | Semiconductor device having variable parameter selection based on temperature and test method A semiconductor device includes a first temperature sensing circuit, a multiplexer, and an output circuit. The first temperature sensing circuit can be configured to provide a first temperature indication based on a first temperature threshold value. The first tempe... | 12/20/2011 |
| 8081531 | Temperature sensor capable of reducing test mode time A temperature sensor includes a temperature sensing unit for producing a sensing level by sensing an internal temperature in a semiconductor memory device, a reference level generating unit for setting up a reference level by selecting one of a plurality of referenc... | 12/20/2011 |
| 8045411 | Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode ... | 10/25/2011 |
| 8018787 | Semiconductor memory device capable of controlling a supply current of a memory cell and method thereof A semiconductor memory device uses a magnetic tunnel junction device (MTJ) and includes a memory cell connected between a first driving line and a second driving line and configured to store data having a data state that is determined based on a direction of a curre... | 09/13/2011 |
| 8004919 | Methods and apparatus for extending the effective thermal operating range of a memory Apparatus and systems are provided for thermal regulation of a memory integrated circuit (“IC”). The apparatus and systems may include a thermal sensor on a memory IC, and a heating element coupled to the thermal sensor. The heating element is adapted to heat th... | 08/23/2011 |
| 8004917 | Bandgap voltage and temperature coefficient trimming algorithm A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where t... | 08/23/2011 |
| 8004918 | Memory cell heating elements The present disclosure relates to the heating of memory cells. ... | 08/23/2011 |
| 7995414 | Semiconductor memory device, method of operating semiconductor memory device, and memory system A semiconductor memory device is provided which comprises: a sense amplifier; and a bit line, wherein the disconnection of the sense amplifier from the bit line is performed in a data read operation when temperature in the semiconductor memory device is at a first t... | 08/09/2011 |
| 7990793 | Semiconductor device having single-ended sensing amplifier A semiconductor device has a DRAM cell configured from an information charge accumulating capacitor and a memory cell selecting transistor, the threshold voltage value of a MOS transistor that constitutes a sense circuit is monitored, and the monitored threshold vol... | 08/02/2011 |
| 7986579 | Memory device and method thereof A device, and corresponding method, includes a temperature dependent bias generator to generate a voltage that is applied to a control gate of a sense amplifier. By applying the temperature dependent bias signal to the sense amplifier, a substantially temperature in... | 07/26/2011 |
| 7978556 | On-chip temperature sensor A temperature invariant reference voltage and a temperature variant physical quantity, such as a voltage or current, are generated. The temperature variant physical quantity changes in response to a temperature of the integrated circuit. A temperature sensor circuit... | 07/12/2011 |
| 7940591 | Methods and apparatuses for controlling fully-buffered dual inline memory modules Methods and apparatuses are presented for controlling a fully buffered dual inline memory module. In one embodiment, the memory module may include at least two memory chips, a buffer coupled to the at least two memory chips (the buffer serially receiving data to be ... | 05/10/2011 |
| 7929366 | Temperature detector in an integrated circuit A temperature detector in an integrated circuit comprises a temperature-dependent voltage generator, a ring oscillator, a timer and a clock-driven recorder. The temperature-dependent voltage generator is configured to generate at least one temperature-dependent volt... | 04/19/2011 |
| 7911864 | Semiconductor memory device A semiconductor memory device includes a memory cell array in which a plurality of memory cells are arranged in a matrix, a read unit which reads out data from the memory cells in the memory cell array, a write unit which writes data in the memory cells in the memor... | 03/22/2011 |
| 7911865 | Temperature compensation of memory signals using digital signals A temperature sensor generates a digital representation of the temperature of the integrated circuit. A logic circuit reads the digital temperature and generates a multiple bit digital representation of an operational voltage and a multiple bit digital representatio... | 03/22/2011 |
| 7907462 | Core voltage discharger and semiconductor memory device with the same A core voltage discharger is capable of adjusting an amount of a current discharged according to temperature. The discharger for decreasing a level of a predetermined voltage receives temperature information from an on die thermal sensor and discharges a different a... | 03/15/2011 |
| 7889586 | Circuit and method for retrieving data stored in semiconductor memory cells A circuit comprises at least one memory cell adapted to store data in terms of values of an electrical characteristic thereof, which exhibits a variability with temperature according to a first variation law; a voltage generator is provided for generating a voltage ... | 02/15/2011 |
| 7885132 | Semiconductor memory device enhancing reliability in data reading An internal voltage generating circuit generates and supplies a boosted voltage higher than an internal power supply voltage, as an operating power supply voltage, to a sense amplifier in a read circuit for reading data of a memory cell. A bit line precharge current... | 02/08/2011 |
| 7881139 | Semiconductor memory device with temperature sensing device and operation thereof A semiconductor memory device includes a thermosensor that senses present temperatures of the device and confirms whether the temperature values are valid. The thermosensor includes a temperature sensing unit, a storage unit and an initializing unit. The temperature... | 02/01/2011 |
| 7864614 | Semiconductor memory device A semiconductor memory device includes a memory cell array which includes a plurality of memory cells which are arrayed in a matrix at intersections between a plurality of word lines and a plurality of bit lines and a power supply circuit which includes a first band... | 01/04/2011 |
| 7864613 | Thermal code transmission circuit and semiconductor memory device using the same Disclosed are a thermal code transmission circuit and a semiconductor memory device using the same. The thermal code transmission circuit includes a select signal generator which generates a select signal in response to a first enable signal, a level signal generato... | 01/04/2011 |
| 7843752 | Circuit and method for controlling refresh periods in semiconductor memory devices An integrated circuit memory device includes a refresh control circuit that generates an internal memory refresh command signal having a period that is changed relative to a period of an external memory refresh command signal received by the memory device. This chan... | 11/30/2010 |
| 7821860 | Stable temperature adjustment for refresh control A refresh control circuit and method generates a refresh signal in response to one of a plurality of clock signals and a temperature signal. The clock signals and temperature signal may be synchronized to prevent an incomplete refresh operation at a trip point of a ... | 10/26/2010 |
| 7813204 | Method and system for memory thermal load sharing using memory on die termination Memory component temperature information is used to implement a method for ODT (on die termination) thermal load management. A respective temperature of a plurality of memory components are accessed, and based on this temperature, an ODT cycle is directed to a first... | 10/12/2010 |
| 7804729 | Temperature compensation circuit and method for sensing memory A temperature compensation circuit includes a voltage generator, a comparator and an emulation cell array. The voltage generator provides a predetermined voltage and a reference voltage. The comparator has a first terminal for receiving the predetermined voltage, an... | 09/28/2010 |
| 7773446 | Methods and apparatus for extending the effective thermal operating range of a memory Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response ... | 08/10/2010 |
| 7768856 | Control of temperature slope for band gap reference voltage in a memory device Systems and/or methods are presented that can facilitate regulating performance of operations in a memory device based on controlling an operating temperature slope associated with the memory device. A regulator component can facilitate controlling the operating tem... | 08/03/2010 |
| 7760569 | Semiconductor memory device with temperature control A memory device in a semiconductor substrate includes at least one temperature sensor to provide a temperature dependent signal and at least one circuit to dissipate heat in response to a control signal. A control circuit is coupled to the at least one circuit and i... | 07/20/2010 |
| 7760570 | Semiconductor device having variable parameter selection based on temperature and test method A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the lik... | 07/20/2010 |
| 7755965 | Temperature dependent system for reading ST-RAM A memory device that includes at least one memory cell, the memory cell includes: a magnetic tunnel junction (MTJ); and a transistor, wherein the transistor is operatively coupled to the MTJ; a bit line; a source line; and a word line, wherein the memory cell is ope... | 07/13/2010 |
| 7733730 | Negative voltage detection circuit and semiconductor integrated circuit A negative voltage detection circuit including first and second MOS transistor circuits configured to change a dimension size of a transistor based on a control signal, a first comparator circuit, a gate electrode of the second MOS transistor circuit commonly couple... | 06/08/2010 |
| 7715263 | Semiconductor memory device A semiconductor memory device includes a memory cell array and a voltage generation circuit for generating a voltage applied to the memory cell array, in which a plurality of drive MOS transistors having different width dimensions are selectively connected in parall... | 05/11/2010 |
| 7656734 | Methods and apparatus for extending the effective thermal operating range of a memory Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response ... | 02/02/2010 |
| 7630265 | On-chip temperature sensor A temperature invariant reference voltage and a temperature variant physical quantity, such as a voltage or current, are generated. The temperature variant physical quantity changes in response to a temperature of the integrated circuit. A temperature sensor circuit... | 12/08/2009 |