Class 365/174 - Semiconductive

Subclass of Class 365 - Static information storage and retrieval
Definition: Subject matter in which information is stored and retrieved
No. of patents: 488
Last issue date: 05/29/2012

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Number	Title	Issue Date
5325325	Semiconductor memory device capable of initializing storage data An SRAM is provided wherein each memory cell has first and second storage nodes to be maintained at complementary potentials corresponding to storage data and first and second inverters provided in anti-parallel between the first storage node and the seco...	06/28/1994
5311465	Semiconductor memory device that uses a negative differential resistance A semiconductor memory device comprises a memory cell transistor that includes two active parts each including therein an emitter and a base and showing a negative differential resistance. The collector layer is shared commonly by the two active parts and...	05/10/1994
5307311	Microvibratory memory device A memory device whose media scanning is vibrationally (cyclic harmonic vibration) or inertially (one-time pulsed read/write) driven is provided, comprising a plurality of cantilevers (7, 7', 7"), attached at one end and capable of vibrating. On the opposi...	04/26/1994
5299150	Circuit for preventing false programming of anti-fuse elements A circuit for preventing false programming of unselected anti-fuses in an anti-fuse array includes a series impedance including a plurality of transistors which may be used for partial address selection connected between a source of programming voltage an...	03/29/1994
5296752	Current memory cell A current memory cell for sampling a current (I) at a current terminal (5) during a sample interval and for applying the current (I) to the current terminal (5) during a hold interval. A first switch (S1) connects a PMOS transistor (P1) as a diode during ...	03/22/1994
5297089	Balanced bit line pull up circuitry for random access memories A balancing circuit which may be used as part of a random access memory system for eliminating bit line offset, is disclosed. The balancing circuit contemplated by the invention is capable of supporting rapid memory accesses (such as reads when the memory...	03/22/1994
5293335	Ceramic thin film memory device A digital memory circuit for electronic applications. The circuit has at least one memory element connected in series with a load resistor. The digital memory circuit also includes a voltage supply and a data output terminal. The memory element in the dig...	03/08/1994
5289408	Memory apparatus using tunnel current techniques A scanning tunneling microscope memory apparatus comprises first and second integrated circuit (IC) substrates. First and second cantilevers, which can be moved by piezoelectric elements, are arranged on the first and second IC substrates, respectively. T...	02/22/1994
5287303	SCR type memory apparatus An SCR type memory apparatus which is short in access time, easy in setting current values upon reading and writing and easy in constructing a peripheral circuit with less power supply voltage limitation is described. The semiconductor memory apparatus co...	02/15/1994
5276638	Bipolar memory cell with isolated PNP load A bipolar memory array and memory cell. The memory cell has a pair of cross coupled NPN storage transistors and a pair of PNP load transistors. The collector of each of the load transistors is connected to one of the storage transistors. A base, common to...	01/04/1994
5255225	Semiconductor integrated circuit device and memory consisting of semiconductor integrated circuit A semiconductor integrated circuit device including a level conversion circuit in which the simplifying of the circuit and the increasing of the speed of operation have been attained is provided. A pair of complementary output signals amplified to a required s...	10/19/1993
5253202	Word line driver circuit for dynamic random access memories A wordline driver circuit for reading the contents of a Dynamic Random Access Memory (DRAM). The circuit is implemented in CMOS and is capable of pulling the wordlines to a negative potential with respect to the substrate, thereby decreasing the access ti...	10/12/1993
5243557	Bi-CMOS semiconductor integrated circuit Disclosed here in is a semiconductor integrated circuit comprising a substrate, a memory cell array having a plurality of memory cells arranged in rows and columns, a plurality of word lines, and a plurality of bit lines, and a plurality of word-line driv...	09/07/1993
5235543	Dual port static memory with one cycle read-modify-write A dual port static memory cell with one cycle read-modify-write operation. The static memory cell includes a write line for receiving new data to be written into the static memory cell, switching means for coupling the new data into the static memory cell...	08/10/1993
5216631	Microvibratory memory device A memory device whose media scanning is vibrationally (cyclic harmonic vibration) or inertially (one-time pulsed read/write) driven is provided, comprising a plurality of cantilevers (7, 7', 7"), attached at one end and capable of vibrating. On the opposi...	06/01/1993
5216632	Memory arrangement with a read-out circuit for a static memory cell A memory arrangement that includes a static memory cell with two MOSFETs that are connected such that an input signal for setting the memory cell is applied to one MOSFET, and the output of the other MOSFET is connected to the input of the first MOSFET, s...	06/01/1993
5164916	High-density double-sided multi-string memory module with resistor for insertion detection A high-density memory module has thirty-two memory integrated circuit chips, sixteen decoupling capacitors, and two resistors mounted on a double-sided multi-layer printed wiring board having a series of edge terminals for connection to a motherboard. One...	11/17/1992
5162819	Information processing apparatus, information processing method, and recording medium employed therefor An information processing apparatus comprises a recording medium having at least an underlying electrode and a photoconductive thin film and having an insulating or semiconducting recording region capable of accumulating an electric charge; and a probe el...	11/10/1992
5144581	Apparatus including atomic probes utilizing tunnel current to read, write and erase data A micro scanning tunneling microscope ("STM") arithmetic circuit device comprises an information-rewritable micro STM recording medium and a micro STM recording apparatus which temporarily stores information on the recording medium such that the informati...	09/01/1992
5136533	Sidewall capacitor DRAM cell A dynamic RAM is provided with enhanced charge storage capacity by increasing the surface area between the two electrodes of the storage capacitor. The first electrode consists of a thick conductive layer whose vertical sidewalls provide the extra surface...	08/04/1992
5136534	Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell A memory cell is disclosed which comprises a filament channel transistor and a ferroelectric capacitor formed on a surface of a semiconductor substrate. The transistor comprises a substantially cylindrical channel filament which is formed substantially pe...	08/04/1992
5132934	Method and apparatus for storing digital information in the form of stored charges Method and apparatus for storing digital information in a dense memory structure. A semiconductor substrate has a thin insulating layer formed thereon. Over the thin insulating layer is formed a dielectric charge-storage layer. A piezoelectric bimorph can...	07/21/1992
5122986	Two transistor dram cell A semiconductor memory cell includes a write row line, a read row line, a write column line, a read column line, a single MOS write transistor, and a single MOS read transistor. The write transistor has a first controlled node coupled to the write column ...	06/16/1992
5121357	Static random access split-emitter memory cell selection arrangement using bit line precharge This invention relates generally to the static, random access, semiconductor memory arrays which incorporate split-emitter memory cells. The latter are accessed during a read cycle of a selected memory cell by precharging all the bit lines of unselected m...	06/09/1992
5119163	Semiconductor device A semiconductor device includes memory cells each of which include a plurality of groups of an anti-fuse and a transistor connected in series; a capacitor including first and second electrodes, with the first electrode connected to a bit line of the memor...	06/02/1992
5084838	Large-scale integrated circuit device such as a wafer scale memory having improved arrangements for bypassing, redundancy, and unit integrated circuit interconnection A plurality of unit integrated circuits mounted on a large-scale integrated circuit device, for example, a wafer scale memory, are each provided with a bypass circuit which selectively shorts input and output nodes in the corresponding unit integrated cir...	01/28/1992
5077688	Semiconductor memory device having improved memory cells provided with cylindrical type capacitors A semiconductor memory device having a storage region constituted with the arrangement of a plurality of memory cells on a main surface of a semiconductor substrate. Each memory cell includes a switching element and a passive element for signal retention ...	12/31/1991
5077687	Gallium arsenide addressable memory cell An addressable memory cell (10) which is composed of an interrupt transistor (20) of the field-effect type whose source (S) is connected to the input terminal (I) of the cell (10) and whose gate (G) is connected to a clock (H, H) and a loop (30) which inc...	12/31/1991
5036490	Memory device with dual cantilever means The memory device comprises a recording member in which perturbations are selectively formed, a probe for detecting the presence or absence of the perturbations, a first cantilever having the recording member at a forward end, and a second cantilever havi...	07/30/1991
5023836	Semiconductor memory device A semiconductor memory device comprises a transistor and a resistor. The transistor has negative differential resistance characteristics in an emitter current or a source current thereof. Therefore the semiconductor memory device has few elements and a si...	06/11/1991
5023835	Semiconductor memory system for use in logic LSI's A semiconductor memory system includes a memory section formed on a semiconductor substrate and having decode means for decoding an address signal, and a logic section formed on the semiconductor substrate and having address signal forming means for formi...	06/11/1991
5020027	Memory cell with active write load A memory cell responsive to a write enable signal for storing write signals present on a pair of write bit lines and responsive to a read enable signal for presenting stored data on a pair of read sense lines further includes a timed, active write load. T...	05/28/1991
4991136	Semiconductor associative memory device with memory refresh during match and read operations A semiconductor associative memory device comprises a content addressable memory cell connected to a word line, a bit line, an inversion bit line and a match line. The memory cell comprises first and second n channel MOS transistors constituting a capacit...	02/05/1991
4970685	Semiconductor memory device having a divided bit line structure A semiconductor memory device includes an array of memory cells arranged in rows and columns, a plurality of divided bit line pairs connecting the memory cells, the divided bit line pairs extending along a given column of memory cells, and a pair of main ...	11/13/1990
4970689	Charge amplifying trench memory cell A gain memory cell circuit includes a storage capacitor connected between a storage node and ground, a write word line, a read word line, a second capacitor capactively coupling the read word line to the storage node, a read transistor having its source/d...	11/13/1990
4958320	Radiation resistant bipolar memory A bipolar memory of a construction having high immunity to soft error attributable to alpha rays is provided. The transistors of a flip flop, i.e., the essential circuitry of the memory cell, are inverted and the load device thereof has shielding means fo...	09/18/1990
4958318	Sidewall capacitor DRAM cell A dynamic RAM is provided with enhanced charge storage capacity by increasing the surface area between the two electrodes of the storage capacitor. The first electrode consists of a thick conductive layer whose vertical sidewalls provide the extra surface...	09/18/1990
4945515	Memory writing apparatus An input section comprising a needle which has a fine tip portion. A data is written in a memory by applying electrical stimulation between the tip portion of the needle and the memory. A memory writing apparatus enables non-contact recording on an atomic...	07/31/1990
4943740	Ultra fast logic The logic has an extremely high speed, very low number of components and large common mode rejection, and is intended to eliminate the emitter-coupled logic (ECL). The supply voltage and power consumption are small. The logic is particularly for digital s...	07/24/1990
4942555	Bi-MOS semiconductor memory having high soft error immunity A semiconductor memory is provided having high reliability, and which particularly prevents data destruction by rays, and the like. In a semiconductor memory for detecting memory data from the conduction ratio between a transistor of a flip-flop type memo...	07/17/1990

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Class 365/174 - Semiconductive