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| Number | Title | Issue Date |
| 4006366 | Semiconductor device with memory effect A semiconductor device including a heterojunction between an indirect semiconductor and a direct semiconductor of lower band gap which exhibits a notch-spike direct-indirect structure and circuit means for obtaining a current-voltage characteristic with t... | 02/01/1977 |
| 4006469 | Data storage cell with transistors operating at different threshold voltages A semiconductor memory or storage circuit includes cross coupled transistors and isolating transistors operating at a first threshold voltage and load transistors for the cross coupled transistors operating at a second threshold voltage. The storage cell ... | 02/01/1977 |
| 4005393 | Bipolar semiconductor memory with recharging circuit for capacitively loaded lines A bipolar semiconductor memory has a matrix of word-by-word selectable memory cells and selective circuits associated therewith in the word direction and in the bit direction for selective memory words in response to receipt of address signals. A decoder ... | 01/25/1977 |
| 3997881 | Static storage element circuit A static storage element circuit has two pairs of complementary-channel-field effect transistors. A word line and a bit line connect with at least one of the field effect transistors. Connection lines between the field effect transistors create parasitic ... | 12/14/1976 |
| 3979734 | Multiple element charge storage memory cell An integrated circuit memory system includes capacitive storage memory cells capable of storing n bits of information on n capacitors associated with multiple emitters of a bilaterally conductive bipolar transistor. Each capacitor is coupled to a separate... | 09/07/1976 |
| 3976983 | Bipolar programmable read only memory with fusible links A read-only memory which can be programmed by means of internal fuses and whose memory cells are formed by bipolar transistors in an ECL circuit. The emitters of the memory-position transistors are coupled to the emitter in a row-address transistor, the bases ... | 08/24/1976 |
| 3974486 | Multiplication mode bistable field effect transistor and memory utilizing same A novel solid state device which exhibits two-terminal negative resistance characteristics. The negative resistance characteristic may be readily shaped by external bias control, providing a wide range of oscillatory or bistable properties. The negative r... | 08/10/1976 |
| 3973246 | Sense-write circuit for bipolar integrated circuit ram A bipolar sense-write circuit is provided for sensing voltage levels representative of a logical "1" or "0" stored in a flip-flop storage cell and for writing voltage levels into the flip-flop storage cell. The sense-write circuit includes first and secon... | 08/03/1976 |
