Bizarre Patents
A simulation environment for the sport of boxing utilizing a robotic machine interface system which carries a person
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8174879 | Biosensor and sensing cell array using the same A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array inc... | 05/08/2012 |
| 8159871 | Magnetoresistive memory cell using floating body effect, memory device having the same, and method of operating the memory device A magnetoresistive memory cell includes an MTJ device and a select transistor. The select transistor includes a first conduction-type semiconductor layer, a gate electrode formed by disposing a gate insulating layer on top of the semiconductor layer, and first and s... | 04/17/2012 |
| 8159872 | Magnetic random access memory An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagneti... | 04/17/2012 |
| 8139405 | Magnetoresistive element and magnetoresistive random access memory including the same The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that cr... | 03/20/2012 |
| 8120950 | Semiconductor device A semiconductor device includes: a first magnetic random access memory including a first memory cell and a second magnetic random access memory including a second memory cell operating at higher speed than the first memory cell and is provided on the same chip toget... | 02/21/2012 |
| 8102703 | Magnetic element with a fast spin transfer torque writing procedure A magnetic tunnel junction, including a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current throug... | 01/24/2012 |
| 8098520 | Storage device including a memory cell having multiple memory layers In a particular illustrative embodiment, a storage device includes a controller and a plurality of resistive elementary memory cells accessible via the controller. Each resistive elementary memory cell of the plurality of resistive elementary memory cells includes a... | 01/17/2012 |
| 8089803 | Magnetic random access memory and operating method of the same A magnetic random access memory of a spin transfer process, includes a plurality of magnetic memory cells 10, a current supply unit 43+20+30 and a control unit 41. The current supply unit 43+20+30 supplies a write current to the magnetic ... | 01/03/2012 |
| 8077509 | Magnetic memory A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnet... | 12/13/2011 |
| 8045371 | Magnetic storage device having a buffer track and storage tracks, and method of operating the same An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connecte... | 10/25/2011 |
| 8040724 | Magnetic domain wall random access memory A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic re... | 10/18/2011 |
| 8031519 | Shared line magnetic random access memory cells A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and ... | 10/04/2011 |
| 8018765 | Three-dimensional magnetic memory Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits ... | 09/13/2011 |
| 7995383 | Magnetic tunnel junction cell adapted to store multiple digital values A particular magnetic tunnel junction (MTJ) cell includes a side wall defining a first magnetic domain adapted to store a first digital value. The MTJ cell also includes a bottom wall coupled to the side wall and defining a second magnetic domain adapted to store a ... | 08/09/2011 |
| 7974123 | Method using a synthetic molecular spring device in a system for dynamically controlling a system property and a corresponding system thereof Using a synthetic molecular spring device in a system for dynamically controlling a system property, such as momentum, topography, and electronic behavior. System features (a) the synthetic molecular spring device having (i) at least one synthetic molecular assembly... | 07/05/2011 |
| 7969775 | Three dimensional magnetic memory and/or recording device An electronic memory and/or recording device includes a three dimensional magnetic medium. Three dimensional magnetic medium includes a plurality of magnetic sublayers, each of the magnetic sublayers being separated from one other by non-magnetic interlayers. ... | 06/28/2011 |
| 7957184 | Magnetoresistive element and magnetoresistive random access memory including the same The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that cr... | 06/07/2011 |
| 7948795 | Thin film magnetic memory device including memory cells having a magnetic tunnel junction In the data read operation, a memory cell and a dummy memory cell are respectively coupled to two bit lines of a selected bit line pair, a data read current is supplied. In the selected memory cell column, a read gate drives the respective voltages on a read data bu... | 05/24/2011 |
| 7936598 | Magnetic stack having assist layer A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist... | 05/03/2011 |
| 7936597 | Multilevel magnetic storage device The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capab... | 05/03/2011 |
| 7936596 | Magnetic tunnel junction cell including multiple magnetic domains In a particular embodiment, a magnetic tunnel junction (MTJ) structure is disclosed that includes an MTJ cell having multiple sidewalls that extend substantially normal to a surface of a substrate. Each of the multiple sidewalls includes a free layer to carry a uniq... | 05/03/2011 |
| 7898849 | Compound cell spin-torque magnetic random access memory A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic s... | 03/01/2011 |
| 7885105 | Magnetic tunnel junction cell including multiple vertical magnetic domains Magnetic tunnel junction cell including multiple vertical domains. In an embodiment, a magnetic tunnel junction (MTJ) structure is disclosed. The MTJ structure includes an MTJ cell. The MTJ cell includes multiple vertical side walls. Each of the multiple vertical si... | 02/08/2011 |
| 7852668 | Semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintai... | 12/14/2010 |
| 7821822 | Read/write elements for a three-dimensional magnetic memory Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional m... | 10/26/2010 |
| 7804710 | Multi-layer magnetic random access memory using spin-torque magnetic tunnel junctions and method for write state of the multi-layer magnetic random access memory A stacked magnetic tunnel junction (MTJ) structure of a multi-layer magnetic random access memory (MRAM) which includes a plurality of stacked MTJ devices serially connected to each other and an access transistor shared between the stacked MTJ devices. The stacked M... | 09/28/2010 |
| 7800942 | Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that ... | 09/21/2010 |
| 7768824 | Magnetoresistive element and magnetoresistive random access memory including the same The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that cr... | 08/03/2010 |
| 7751235 | Semiconductor memory device and write and read methods of the same A semiconductor memory device includes first to fourth resistance change elements sequentially arranged apart from each other in a first direction, a first electrode which connects one terminals of the first and second resistance change elements, a second electrode ... | 07/06/2010 |
| 7710770 | Data storage device and method A serial magnetic mass storage device and associated data storage method of the kind in which data is encoded in single magnetic domains in nanowires. In the invention, the nanowires are provided with a large number of notches along their length to form domain wall ... | 05/04/2010 |
| 7706179 | Three dimensional magnetic memory and/or recording device An electronic memory and/or recording device includes a three dimensional magnetic medium. Three dimensional magnetic medium includes a plurality of magnetic sublayers, each of the magnetic sublayers being separated from one other by non-magnetic interlayers. ... | 04/27/2010 |
| 7649770 | Programming matrix A programming matrix switches of one of n logical inputs to one of j outputs. The programming matrix includes at least one layer system with multiple magnetic elements situated at selected locations, in which case, during and/or after the formation of the layer syst... | 01/19/2010 |
| 7616478 | Magnetic storage device A magnetic storage device comprises an array of magnetic memory cells (50). Each cell (50) has, in electrical series connection, a magnetic tunnel junction (MTJ) (30) and a Zener diode (40). The MTJ (30) comprises, in sequence, a f... | 11/10/2009 |
| 7613040 | Methods for using sense lines to thermally control the state of an MRAM A method of switching a magnetic orientation of at least one of a plurality of magnetic memory elements in a magnetic random access device can include coupling a sense line to the at least one of the plurality of magnetic memory elements wherein the sense line inclu... | 11/03/2009 |
| 7609547 | Biosensor and sensing cell array using the same A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array inc... | 10/27/2009 |
| 7606065 | Three-dimensional magnetic memory having bits transferrable between storage layers Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits ... | 10/20/2009 |
| 7583529 | Magnetic tunnel junction devices and magnetic random access memory A magnetic random access memory (MRAM) is disclosed. The MRAM includes a first electrode, an antiferromagnetic layer formed over the first electrode, a pinned layer formed over the antiferromagnetic layer, a barrier layer formed over the pinned layer, a composite fr... | 09/01/2009 |
| 7573737 | High speed low power magnetic devices based on current induced spin-momentum transfer A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fi... | 08/11/2009 |
| 7567454 | Thin film magnetic memory device capable of conducting stable data read and write operations A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provi... | 07/28/2009 |
| 7539051 | Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second f... | 05/26/2009 |
