Did You Know...
...that a workman who left the soap mixing machine on too long was responsible for making Ivory Soap? He was so embarrassed by his mistake that he threw the mess in a stream. Imagine his dismay when the evidence of his error floated to the surface! Result: Ivory soap, the soap that floats.
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| Number | Title | Issue Date |
| 8184491 | Method for reading memory cell Methods for reading a memory cell are provided. The method for reading a memory cell includes applying a first read pulse to a memory cell, heating the memory cell to a first temperature and obtaining a first read data. The first read data is converted to a first di... | 05/22/2012 |
| 8169821 | Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM) A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percen... | 05/01/2012 |
| 8159870 | Array structural design of magnetoresistive random access memory (MRAM) bit cells Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cells are disclosed. The bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis that is parallel to a longitudina... | 04/17/2012 |
| 8154916 | Nonvolatile memory circuit using spin MOS transistors Certain embodiments provide a nonvolatile memory circuit in which a first p-channel MOS transistor and a first n-channel spin MOS transistor are connected in series, a second p-channel MOS transistor and a second n-channel spin MOS transistor are connected in series... | 04/10/2012 |
| 8154917 | Magnetic storage device A magnetic storage device includes a plurality of MRAM memory cells connected to a data transfer line, a clamp transistor connected between the data transfer line and a reading signal line and configured to fixedly hold the potential of the data transfer line, and a... | 04/10/2012 |
| 8149617 | Data storage medium and method for accessing digital data therein A data storage medium is described. The data storage medium may comprise a first bit of magnetic medium for a first read-and-write head, and further comprise a second bit of magnetic medium. The second bit of magnetic medium, below the first bit of magnetic medium, ... | 04/03/2012 |
| 8144509 | Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size Systems, circuits and methods for controlling write operations in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A reduced bit cell size is achieved by arranging the source lines (SL) substantially in parallel with the word line... | 03/27/2012 |
| 8120949 | Low-cost non-volatile flash-RAM memory A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. ... | 02/21/2012 |
| 8107285 | Read direction for spin-torque based memory device A spin-torque based memory device includes a plurality of magnetic storage cells in an array, each magnetic storage cell includes at least one magnetic tunnel junction (MTJ) element, and at least one bit line and at least one bit complement line corresponding to the... | 01/31/2012 |
| 8094490 | Nonvolatile loop magnetic memory A nonvolatile loop magnetic memory having a magnetically writeable nonvolatile magnetic memory element and a loop magnetic shunt. The loop magnetic shunt has a slot through a loop of the loop magnetic shunt, the slot forming first and second ends in the loop magneti... | 01/10/2012 |
| 8089802 | Memory device and memory Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two... | 01/03/2012 |
| 8077508 | Dynamic multistate memory write driver A circuit includes, in part, a multitude of magnetic random access memory cells, one or more column decoders, one or more row decoders, and a write driver circuit. The write driver circuit is responsive to data signal as well as to read/write signals. During writing... | 12/13/2011 |
| 8045370 | Memory self-reference read and write assist methods A magnetic tunnel junction memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a magnetic tunnel junction memory unit includes applying a first read current through a magnetic tunnel junction data cel... | 10/25/2011 |
| 8036026 | Semiconductor memory device and method for operating the same A semiconductor memory device includes a plurality of memory cells configured to store data having a polarity corresponding to a direction of current flowing through a source line and a bit line; and a precharge driving unit configured to precharge the bit line to a... | 10/11/2011 |
| 8018764 | Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storag... | 09/13/2011 |
| 8000133 | Thin film magnetic memory device capable of conducting stable data read and write operations A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provi... | 08/16/2011 |
| RE42619 | Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b), which can include an antiferromagnetic layer adjacent the... | 08/16/2011 |
| 7969773 | Computer system with addressable storage medium A computer system with an addressable medium is disclosed. The computer system comprises an addressable medium subsystem, a microprocessor and at least one input/output device. The addressable medium subsystem includes: a control logic which has a control circuit wi... | 06/28/2011 |
| 7969774 | Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices Electronic devices comprise a first substrate and a second substrate. The first substrate comprises circuitry including a plurality of conductive traces at least substantially parallel to each other through at least a portion of the first substrate. A plurality of b... | 06/28/2011 |
| 7961509 | Spin-transfer torque memory self-reference read and write assist methods A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and fo... | 06/14/2011 |
| 7957183 | Single bit line SMT MRAM array architecture and the programming method An SMT MRAM device includes a plurality of SMT MRAM cells arranged in an array of rows and columns. Single bit lines connect the columns of the SMT MRAM cells for receiving an in-phase data signal. Source lines connect pairs of rows of the SMT MRAM cells for receivi... | 06/07/2011 |
| 7957182 | Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic fi... | 06/07/2011 |
| 7957181 | Magnetic tunnel junction magnetic memory This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: one magnetic reference layer, the magnetization of which is always oriented in the s... | 06/07/2011 |
| 7948813 | Non-volatile semiconductor memory device and its reading method A reading method includes: selecting the memory cell; performing a read operation on the selected memory cell to supply the read voltage, amplifying a first voltage read out from the selected memory element, outputting a second voltage obtained by amplifying the fir... | 05/24/2011 |
| 7944742 | Diode assisted switching spin-transfer torque memory unit A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunne... | 05/17/2011 |
| 7936595 | Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the... | 05/03/2011 |
| 7929342 | Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer. A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic re... | 04/19/2011 |
| 7924609 | Spin valve element driving method and spin valve element A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a f... | 04/12/2011 |
| 7920417 | Semiconductor memory device A semiconductor memory cell includes a plurality of memory cells configured to store data having polarity corresponding to a direction of current flowing in first and second driving lines, a current generator configured to generate a predetermined read current, appl... | 04/05/2011 |
| 7920416 | Increased magnetic damping for toggle MRAM Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed magnetic layer; at least one first free magnetic layer separated from t... | 04/05/2011 |
| 7916528 | Predictive thermal preconditioning and timing control for non-volatile memory cells A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memo... | 03/29/2011 |
| 7911832 | High speed low power magnetic devices based on current induced spin-momentum transfer A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fi... | 03/22/2011 |
| 7885104 | Information storage devices using magnetic domain wall movement and methods of operating the same An information storage device includes a magnetic layer configured to store information, a first and second conductive layer. The first conductive layer contacts a first end of the magnetic layer. The second conductive layer contacts a second end of the magnetic lay... | 02/08/2011 |
| 7881104 | Magnetic memory with separate read and write paths Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and ... | 02/01/2011 |
| 7869272 | Memory device and memory for retaining information based on amagnetization state of a magnetic material A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an... | 01/11/2011 |
| 7864569 | Structure of magnetic random access memory using spin-torque transfer writing A nano-magnetic device includes a first hard magnet having a first magnetization direction and having a central axis. The device also includes a second hard magnet separated from the first hard magnet by a dielectric liner. The second hard magnet has a second magnet... | 01/04/2011 |
| 7852667 | ST-RAM employing a magnetic resonant tunneling diode as a spacer layer A memory cell that includes a first magnetic layer, the magnetization of which is free to rotate under the influence of spin torque; a tunneling layer comprising a magnetic resonant tunneling diode (MRTD); and a second magnetic layer, wherein the magnetization of th... | 12/14/2010 |
| 7839676 | Magnetic memory device A magnetic memory device includes a plurality of word lines, a plurality of bit lines arranged to intersect with the word lines, an MRAM cell array including a plurality of magnetic random access memory (MRAM) cells arranged at intersection portions between the word... | 11/23/2010 |
| 7826259 | Staggered STRAM cell Spin-transfer torque memory having a free magnetic layer having a thickness extending in a out-of-plane direction and extending in a lateral direction in an in-plane direction between a first end portion and an opposing second end portion. A tunneling barrier separa... | 11/02/2010 |
| 7826260 | Spin-transfer torque memory self-reference read and write assist methods A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and fo... | 11/02/2010 |
