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| Number | Title | Issue Date |
| 8081507 | Tri-state memory device and method A non-volatile tri-state random access memory device, including a permanent magnetic bit; a write module in functional communication with the permanent magnetic bit and configured to selectably alter the permanent magnetic bit between three magnetic states, a write ... | 12/20/2011 |
| 7839675 | Magnetic memory device and method for reading magnetic memory cell using spin hall effect A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the chan... | 11/23/2010 |
| 7742333 | Magnetic memory device using domain structure and multi-state of ferromagnetic material Disclosed is a memory device using a multi-domain state of a semiconductor material, and more particularly to a magnetic memory device, in which a ferromagnetic layer for recording magnetic data serves as a sensing layer so as to have a simple structure, shorten a m... | 06/22/2010 |
| 7376007 | Non-volatile magnetic memory device A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second ... | 05/20/2008 |
| 7372717 | Methods for resistive memory element sensing using averaging A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage su... | 05/13/2008 |
| 7339819 | Spin based memory coupled to CMOS amplifier A nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substra... | 03/04/2008 |
| 7330390 | Noise resistant small signal sensing circuit for a memory device Apparatus and method for data sensing circuitry that uses averaging to sense small differences in signal levels representing data states. The apparatus periodically switches the coupling of input terminals and output terminals of an integrator circuit from a first c... | 02/12/2008 |
| 7307875 | Spin based magnetic sensor A spin based device can be used as a magnetic field sensor. The device uses ferromagnetic materials for implementing a variable spin resistance to a spin injected current having a particular spin value. An external magnetic field can change the magnetization state o... | 12/11/2007 |
| 7289350 | Electronic device with a memory cell The present invention relates to an electronic device comprising a memory cell with a resistive storage element having a first terminal and a second terminal. The resistive storage element can be switched between a first storage state with a first conductivity and a... | 10/30/2007 |
| 7285983 | Programmable array logic circuit employing non-volatile ferromagnetic memory cells A programmable array logic circuit whose temporary memory circuitry employs single bit non-volatile ferromagnetic memory cells. The ferromagnetic memory cells or bits store data even when there is no power provided to the circuitry, thus saving power during operatio... | 10/23/2007 |
| 7269050 | Method of programming a memory device The present invention is a method of programming a memory device, wherein different levels or magnitudes of current may be applied to and imposed on the memory device so that any one of a plurality of memory states may be realized. A read step indicates the so deter... | 09/11/2007 |
| 7257021 | Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed po... | 08/14/2007 |
| 7257018 | Method and apparatus for a low write current MRAM having a write magnet An invention is provided for a low write current MRAM. Each MRAM cell includes a word line and a bit line. A magnetic device is disposed at the intersection of the word line and the bit line. Disposed at either end of the magnetic device is a writing magnet. The pai... | 08/14/2007 |
| 7243203 | Pipeline circuit for low latency memory The embodiments herein describe a memory device and method for reading and writing data. In one embodiment, a memory device is provided comprising a memory array and first and second data buffers in communication with the memory array. The second data buffer compris... | 07/10/2007 |
| 7234360 | TMR sensor A sensor for measuring mechanical changes in length, in particular a compressive and/or tensile stress sensor, includes a sandwich system with two flat and superposed electrodes separated from each other by a tunnel element (tunnel barrier), in particular an oxide b... | 06/26/2007 |
| 7215570 | Spin based device with low transmission barrier An electron spin-based device includes ferromagnetic layers with different coercivities, such that one of such layers is responsive to a magnetic field and the other is fixed. A value of an impedance in the spin based device for a spin polarized current varies in ac... | 05/08/2007 |
| 7211448 | Semiconductor device manufacturing method capable of reliable inspection for hole opening and semiconductor devices manufactured by method A substrate defining an insulating surface layer portion and formed with a wiring groove filled with a wiring line the wiring line is electrically connected to a conductive member. The conductive member occupies an area larger than an area of the wiring line as view... | 05/01/2007 |
| 7212433 | Ferromagnetic layer compositions and structures for spin polarized memory devices, including memory devices Ferromagnetic materials for use with spin memory and logic devices include a geometry and composition adapted to increase spin injection efficiency and/or reduce fringe fields. The ferromagnetic materials can be oriented to implement a variable spin resistance. The ... | 05/01/2007 |
| 7209381 | Digital processing device with disparate magnetoelectronic gates Magnetic spin devices can be used as a memory element or logic gate. When connected in a circuit configuration, different spin devices can be written to in any number of different ways, such as with different device coercivities, different sets of write lines, diffe... | 04/24/2007 |
| 7193891 | Spin based sensor device A spin based electronic device can be used as a magnetic field sensor. The device uses ferromagnetic materials for implementing a variable spin resistance. An external magnetic field can change the magnetization state of the device by orienting the magnetization of ... | 03/20/2007 |
| 7187578 | Magnetic elements having unique shapes Magnetic elements having unique shapes. In one example, the magnetic element defines an outer peripheral profile and a center point, wherein the outer peripheral profile includes a substantially curviform section and a notch section. The notch section may be configu... | 03/06/2007 |
| 7184289 | Parallel electrode memory A series of address lines extend in a first direction through at least two layers of memory material spaced apart in the first direction. The memory material may be a ferroelectric polymer in one embodiment. The arrangement of lines and layers may increase the densi... | 02/27/2007 |
| 7177180 | Method and apparatus for reading data from a ferromagnetic memory cell A ferromagnetic memory cell is disclosed. The cell includes a bit (10), made of a ferromagnetic material, having a remnant polarity. The cell also includes a read drive line (20) coupled to a first portion of the bit (10), to feed a current into... | 02/13/2007 |
| 7144640 | Tilted media for hard disk drives and magnetic data storage devices A digital storage medium for use in data storage devices has two magnetic layers where the respective easy axes of the magnetic moments in the two layers are perpendicular to each other. Exchange coupling of the magnetic moments in the magnetic layers produces a res... | 12/05/2006 |
| 7133307 | Resistive memory element sensing using averaging A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage su... | 11/07/2006 |
| 7126866 | Low power ROM architecture In a ROM structure, power consumption is reduced by providing for pre-discharging of only the bit line corresponding to the memory location that is being read. Column select lines are coupled to logic to switch in a pre-discharging circuit prior to reading, and to d... | 10/24/2006 |
| 7123498 | Non-volatile memory device MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC include... | 10/17/2006 |
| 7110312 | Non-volatile magnetic memory device A non-volatile magnetic memory cell having a magnetic element with multiple segments which are not co-linear. Each of the segments is magnetized with a remnant magnetic field using a single write line. The segments can be magnetized in a first direction or a second ... | 09/19/2006 |
| 7095667 | Noise resistant small signal sensing circuit for a memory device Apparatus and method for data sensing circuitry that uses averaging to sense small differences in signal levels representing data states. The apparatus periodically switches the coupling of input terminals and output terminals of an integrator circuit from a first c... | 08/22/2006 |
| 7068535 | Magnetic spin based memory with semiconductor selector A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element and one or two semiconductor FET isolation elements. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based sub... | 06/27/2006 |
| 7064976 | Method of operating a stacked spin based memory A method of operating a spin based memory cell stacked architecture is provided. The cells are comprised of magnetic spin storage elements stacked on top of each other on a silicon substrate, as well as one or two semiconductor FET isolation elements. ... | 06/20/2006 |
| 7050329 | Magnetic spin based memory with inductive write lines A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element which is written using inductive write lines. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate ... | 05/23/2006 |
| 7023727 | Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed po... | 04/04/2006 |
| 7020013 | Magnetic field sensor using spin polarized current A hybrid magnetic-semiconductor structure can be used as a magnetic field sensor. The hybrid device uses ferromagnetic materials for implementing a variable spin resistance. An external magnetic field can change the magnetization state of the device by orienting the... | 03/28/2006 |
| 7009875 | Magnetic memory device structure Ferromagnetic elements for use with spin memories, logic devices and processing circuits include a geometry incorporating an asymmetry about one axis and in some instances one or more curved sections. Magnetic memory elements can be set out in an array such that con... | 03/07/2006 |
| 7009901 | System and method for sensing data stored in a resistive memory element using one bit of a digital count A method and system sense the logic state of an unknown initial data bit stored in a selected resistive memory cell. According to one method, a first count representing the logic state of the unknown initial data bit stored in the selected memory cell is generated. ... | 03/07/2006 |
| 7002841 | MRAM and methods for manufacturing and driving the same An MRAM having improved integration density and ability to use a magnetic tunneling junction (MTJ) layer having a low MR ratio, and methods for manufacturing and driving the same, are disclosed. The MRAM includes a semiconductor substrate having a bipolar junction t... | 02/21/2006 |
| 6958930 | Magnetoelectronic device with variable magnetic write field A new magnetic spin device can be used as a memory element or logic gate, such as an OR, AND, NOT, NOR and NAND gate. The state of the magnetic spin device is set inductively. A magnetic spin transistor/gate can be operated with current gain. Furthermore, inductive ... | 10/25/2005 |
| 6954391 | Noise resistant small signal sensing circuit for a memory device Apparatus and method for data sensing circuitry that uses averaging to sense small differences in signal levels representing data states. The apparatus periodically switches the coupling of input terminals and output terminals of an integrator circuit from a first c... | 10/11/2005 |
| 6954390 | Noise resistant small signal sensing circuit for a memory device Apparatus and method for data sensing circuitry that uses averaging to sense small differences in signal levels representing data states. The apparatus periodically switches the coupling of input terminals and output terminals of an integrator circuit from a first c... | 10/11/2005 |
