Did You Know...
...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Number | Title | Issue Date |
| 7929341 | Electromechanical switch and method of forming the same A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves... | 04/19/2011 |
| 7663911 | Isolation structure for deflectable nanotube elements Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The con... | 02/16/2010 |
| 7382648 | Nanomechanical switching device A nanomechanical device includes a nanostructure, such as a MWNT, located between two electrodes. The device switches from an OFF state to an ON state by extension of at least one inner shell of the nanostructure relative to at least one outer shell of the nanostruc... | 06/03/2008 |
| 7372725 | Integrated circuit having resistive memory A memory device including a memory cell, a first circuit, and a second circuit. The memory cell includes phase-change material. The first circuit is configured to provide pulses to the phase-change material and to program each of more than two states into the memory... | 05/13/2008 |
| 7362605 | Nanoelectromechanical memory cells and data storage devices Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment layer is provided in the vicinity of this free-moving portion. To read ... | 04/22/2008 |
| 7301802 | Circuit arrays having cells with combinations of transistors and nanotube switching elements Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line,... | 11/27/2007 |
| 7289357 | Isolation structure for deflectable nanotube elements Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The con... | 10/30/2007 |
| 7280394 | Field effect devices having a drain controlled via a nanotube switching element Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconducto... | 10/09/2007 |
| 7245520 | Random access memory including nanotube switching elements A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive ... | 07/17/2007 |
| 7095645 | Nanoelectromechanical memory cells and data storage devices Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment layer is provided in the vicinity of this free-moving portion. To read ... | 08/22/2006 |
| 4367527 | Pocket calculator for the forecasting of temporal cycles The memory (80) is intended to be read or modified by an electronic logical system of a pocket calculator. It comprises a plurality of bistable electromechanical flip-flop circuits (82). Each flip-flop circuit (82) comprises an input for setting at 1 (S) ... | 01/04/1983 |
