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| Number | Title | Issue Date |
| 8189369 | Semiconductor device There is provided a semiconductor device that enables high-speed data read and reduces the area of a drive circuit for activating a word line. By signal transmission through a common word line having a low resistance and coupled at a plurality of points to a word li... | 05/29/2012 |
| 8189370 | Magnetic recording element, magnetic memory cell, and magnetic random access memory A low-power consumption non-volatile memory employing an electric field write magnetic recording element is provided. A multiferroic layer 301 is provided adjacent to a magnetic recording layer 2002, and by applying an electric field to the multiferroi... | 05/29/2012 |
| 8184476 | Random access memory architecture including midpoint reference A random access memory architecture includes a first series connected pair of memory elements (202, 206, 302, 306, 402, 404) having a first resistance and a second series connected pair of memory elements (204, 208, 304, 308, 406, 408) having a second ... | 05/22/2012 |
| 8179716 | Non-volatile programmable logic gates and adders Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and t... | 05/15/2012 |
| 8174870 | Magnetic recording element A magnetic recording element is disclosed for which current density required for writing is low and structure of the element is simple. It comprises a ferromagnetic fine wire formed on a Si substrate, current electrodes that contact ends of the ferromagnetic fine wi... | 05/08/2012 |
| 8174871 | Memory cell array Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a r... | 05/08/2012 |
| 8174875 | Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods An integrated circuit memory device may include an integrated circuit substrate, and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memory cell may be configured to store a first bit of data by changing a first characteristic of the multi... | 05/08/2012 |
| 8174873 | Magnetic random access memory and initializing method for the same A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording layer 10. The magnetic recording layer | 05/08/2012 |
| 8174874 | Semiconductor memory device According to one embodiment, a semiconductor memory device includes bit line pairs extending in a column direction, each of the bit line pairs includes a first bit line and a second bit line, and memory cell groups connected to the bit line pairs, respectively, and ... | 05/08/2012 |
| 8174872 | Nonvolatile latch circuit A nonvolatile latch circuit includes: first and second inverters cross-coupled to hold 1-bit data; first and second magnetoresistive elements each having first to third terminals; and a current supply circuitry configured to supply a magnetization reversal current f... | 05/08/2012 |
| 8169818 | Recording method for magnetic memory device A recording method for a magnetic memory device that includes applying, when recording one piece of information, one or more main pulses and one or more sub-pulses in the same direction and applying the one or more sub-pulses after the one or more main pulses, the o... | 05/01/2012 |
| 8169815 | System and method for writing data to magnetoresistive random access memory cells Magnetic random access memory (MRAM) cell with a thermally assisted switching writing procedure and methods for manufacturing and using same. The MRAM cell includes a magnetic tunnel junction that has at least a first magnetic layer, a second magnetic layer, and an ... | 05/01/2012 |
| 8169817 | Magnetoresistive device and magnetic random access memory A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie te... | 05/01/2012 |
| 8169816 | Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly condu... | 05/01/2012 |
| 8164948 | Spintronic devices with integrated transistors The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrate... | 04/24/2012 |
| 8164946 | Magnetic memory element, magnetic memory device, information recording/reproducing apparatus A magnetic memory element includes a pair of electrodes, a junction layer, at least one carbon nanotube, and at least one nanowire. The at least one nanowire is made of a ferromagnetic material and extends through a hole of each the at least one carbon nanotube with... | 04/24/2012 |
| 8164947 | Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with t... | 04/24/2012 |
| 8159866 | Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned la... | 04/17/2012 |
| 8159864 | Data integrity preservation in spin transfer torque magnetoresistive random access memory Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnet... | 04/17/2012 |
| 8159865 | Information storage element and method of writing/reading information into/from information storage element In a method of writing information into and reading information from an information storage element which includes a strip-shaped ferromagnetic material layer, a first electrode disposed at an end of the ferromagnetic material layer, a second electrode disposed at a... | 04/17/2012 |
| 8154913 | Magnetoresistance effect element and magnetic random access memory A magnetoresistance effect element comprising: a first magnetization fixed layer whose magnetization direction is fixed; a first magnetization free layer whose magnetization direction is variable; a first nonmagnetic layer sandwiched between the first magnetization ... | 04/10/2012 |
| 8154914 | Predictive thermal preconditioning and timing control for non-volatile memory cells A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memo... | 04/10/2012 |
| 8154915 | Magnetoresistive element and magnetoresistive random access memory including the same The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that cr... | 04/10/2012 |
| 8149613 | Resistance variable memory device A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a ... | 04/03/2012 |
| 8149614 | Magnetoresistive random access memory element and fabrication method thereof A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situ... | 04/03/2012 |
| 8149615 | Magnetic random access memory An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetiza... | 04/03/2012 |
| 8144503 | Information storage device and method of operating the same An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching dev... | 03/27/2012 |
| 8144504 | Method of operating magnetic random access memory device Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltag... | 03/27/2012 |
| 8139403 | Spin memory and spin transistor Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a thi... | 03/20/2012 |
| 8139402 | Magnetic memory device A magnetic memory device is provided in which, even when a recording layer having an asymmetric shape and a local via are formed over a strap wiring with a sufficient distance allowed therebetween, increase in the size of the magnetic memory device can be suppressed... | 03/20/2012 |
| 8134864 | Exchange-assisted spin transfer torque switching In general, the invention is directed to techniques for reducing the amount of switching current that is utilized within a magnetic storage (e.g., MRAM) device. An example apparatus includes a fixed magnetic layer that provides a fixed direction of magnetization, an... | 03/13/2012 |
| 8130535 | Flexible word-line pulsing for STT-MRAM A method for generating a variable pulse width signal on an integrated circuit (IC) chip, includes receiving a first clock signal on the IC chip and receiving a second clock signal on the IC chip having a variable delay relative to the first clock signal. A signal h... | 03/06/2012 |
| 8130534 | System and method to read and write data a magnetic tunnel junction element A system and method to read and write data in magnetic random access memories are disclosed. In a particular embodiment, a device includes a spin transfer torque magnetic tunnel junction (STT-MTJ) element and a transistor with a first gate and a second gate coupled ... | 03/06/2012 |
| 8120947 | Spin torque transfer MRAM device The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ ... | 02/21/2012 |
| 8120948 | Data writing method for magnetoresistive effect element and magnetic memory A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the s... | 02/21/2012 |
| 8120946 | Stacked magnetic devices Techniques for improving magnetic device performance are provided. In one aspect, a magnetic device, e.g., a magnetic random access memory device, is provided which comprises a plurality of current carrying lines; and two or more adjacent stacked magnetic toggling d... | 02/21/2012 |
| 8116123 | Spin-transfer torque memory non-destructive self-reference read method A spin-transfer torque memory apparatus and non-destructive self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and for... | 02/14/2012 |
| 8116124 | Compound cell spin-torque magnetic random access memory A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic s... | 02/14/2012 |
| 8116122 | Spin-transfer torque memory self-reference read method A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit... | 02/14/2012 |
| 8111544 | Programming MRAM cells using probability write A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a ... | 02/07/2012 |
