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| Number | Title | Issue Date |
| 8184473 | Nanowire memory device and method of manufacturing the same A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first el... | 05/22/2012 |
| 8130569 | Nanoparticle shuttle memory A device for storing data using nanoparticle shuttle memory having a nanotube. The nanotube has a first end and a second end. A first electrode is electrically connected to the first end of the nanotube. A second electrode is electrically connected to the second end... | 03/06/2012 |
| 8085578 | Method and system for coding and read out of information in a microscopic cluster comprising coupled functional islands A method and a system for coding and reading out information in a microscopic cluster formed with coupled functional islands includes: generating the cluster by forming a regular microscopic pattern for locating the functional islands; making use of a physical or ch... | 12/27/2011 |
| 8050081 | Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrier A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal l... | 11/01/2011 |
| 8031514 | Bistable nanoswitch A non-volatile bistable nano-electromechanical switch is provided for use in memory devices and microprocessors. The switch employs carbon nanotubes as the actuation element. A method has been developed for fabricating nanoswitches having one single-walled carbon na... | 10/04/2011 |
| 8004876 | Configurable molecular switch array A computing system for implementing at least one electronic circuit with gain comprises at least one two-dimensional molecular switch array. The molecular switch array is formed by assembling two or more crossed planes of wires into a configuration of devices. Each ... | 08/23/2011 |
| 8000129 | Field-emitter-based memory array with phase-change storage devices Embodiments of the present invention include systems and methods for three-terminal field-emitter triode devices, and memory arrays utilizing the same. In other embodiments, the field-emitter devices include a volume-change material, capable of changing a measurable... | 08/16/2011 |
| 7986546 | Non-volatile shadow latch using a nanotube switch A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the correspondin... | 07/26/2011 |
| 7864560 | Nano-electronic array A nano device includes an array of cells disposed in rows and columns and constructed over a substrate, and an optical circuit disposed over the substrate, wherein the optical circuit is formed by nano elements in a self-assembled process. ... | 01/04/2011 |
| 7830702 | Synthetic molecular spring device Synthetic molecular spring device featuring: (a) a synthetic molecular assembly, SMA, each scalable chemical module including: (i) at least one atom, M, (ii) at least one complexing group, CG, complexed to an atom, M, (iii) at least one axial ligand, AL, reversibly ... | 11/09/2010 |
| 7826250 | Open circuit potential amperometry and voltammetry This invention provides approaches to improve the signal to noise ratio (S/N) in electrochemical measurements (e.g., amperometry, voltammetry, etc.). In particular, a method is described wherein the faradaic current is temporally dissociated from the charging curren... | 11/02/2010 |
| 7821813 | Nanowire memory device and method of manufacturing the same A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first el... | 10/26/2010 |
| 7817458 | Hybrid circuit having nanotube memory cells A hybrid memory system having electromechanical memory cells is discussed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An acces... | 10/19/2010 |
| 7813160 | Nanocrystal quantum dot memory devices Memory devices and recordable media are disclosed that take advantage of memory effects in the electronic transport in CdSe nanocrystal (NC) quantum dot arrays. Conduction through a NC array can be reduced with a negative voltage and then restored with a positive vo... | 10/12/2010 |
| 7782652 | Volatile nanotube-based switching elements with multiple controls Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in ... | 08/24/2010 |
| 7768815 | Optoelectronic memory devices A structure and a method for operating the same. The method comprises providing a resistive/reflective region on a substrate, wherein the resistive/reflective region comprises a material having a characteristic of changing the material's reflectance due to the mater... | 08/03/2010 |
| 7719878 | Reducing the effect of write disturbs in polymer memories The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the addressed bit. For example, each time the data is written back, its pola... | 05/18/2010 |
| 7706171 | Storage device The present invention provides a storage device including a first electrode, a plurality of second electrodes arranged opposite the first electrode across a gap, and a particle which is selectively placed in one of the gaps between the first electrode and the second... | 04/27/2010 |
| 7701754 | Multi-state electromechanical memory cell An electromechanical memory cell utilizes a cantilever and a laterally positioned electrode. The cantilever is spaced apart from the electrode by a distance that is greater than the elastic limit of the cantilever. The memory cell is programmed by applying voltages ... | 04/20/2010 |
| 7692952 | Nanoscale wire coding for stochastic assembly Methods for obtaining codes to be implemented in coding nanoscale wires are described. The methods show how to code a reduced number of nanoscale wires through the use of rotation group codes. The methods further show how to generate different code permutations thro... | 04/06/2010 |
| 7692953 | Method and device for demultiplexing a crossbar non-volatile memory A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality of cross-points, hosting plural memory cells. A first electrode and a ... | 04/06/2010 |
| 7679946 | Memory element array having switching elements including a gap of nanometer order Disclosed is a memory element array comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a prede... | 03/16/2010 |
| 7668004 | Non-volatile switching and memory devices using vertical nanotubes Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Means for sensing the state of the devices include measuring capacitance, and tunneli... | 02/23/2010 |
| 7652911 | Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers Methods for inputting a data-value pattern into a nanowire crossbar, for inputting a data-value pattern into a nanowire crossbar that support computer instructions stored in a computer-readable medium, and for distributing a received data value to each of a set of n... | 01/26/2010 |
| 7639524 | Multi-bit nonvolatile memory devices and methods of operating the same A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second stor... | 12/29/2009 |
| 7630227 | Nano-electronic memory array Systems and methods are disclosed to process a semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the first layer having one or more NANO-bonding areas; self-assembling o... | 12/08/2009 |
| 7599213 | Low surface energy coatings in probe recording An apparatus includes a storage media having a surface coated with a lubricant, and a plurality of probes having tips contacting the lubricant, wherein the probes are coated with one of a fluorocarbon, perfluoropolyether, polytetrafluoroethylene, fluorinated ethylen... | 10/06/2009 |
| 7593251 | Memory cell comprising a molecular transistor, device comprising a plurality of such cells and method for using same The memory cell comprises a field effect memory transistor comprising a nanowire covered by a type of memory molecules and an access transistor of the same type. A source of the access transistor is connected to a drain of the memory transistor. The nanowire of the ... | 09/22/2009 |
| 7583526 | Random access memory including nanotube switching elements Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes conductive terminals, a nanotube article and control circuitry capable ... | 09/01/2009 |
| 7558103 | Magnetic switching element and signal processing device using the same A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the c... | 07/07/2009 |
| 7525833 | Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers One embodiment of the present invention is a nanoscale shift register that can be used, in certain nanoscale and mixed-scale logic circuits, to distribute an input signal to individual nanowires of the logic circuit. In a described embodiment, the nanoscale shift re... | 04/28/2009 |
| 7518905 | High density memory device This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and t... | 04/14/2009 |
| 7499309 | Using organic semiconductor memory in conjunction with a MEMS actuator for an ultra high density memory A metal sulfide based non-volatile memory device is provided herein. The device is comprised of a substrate, a backplane, a planar memory media including a dense array of metal sulfide based memory cells, and a MEMS probe based actuator. The cells of the memory devi... | 03/03/2009 |
| 7495942 | Nanoscale content-addressable memory A combined content addressable memory device and memory interface is provided. The combined device and interface includes one or more one molecular wire crossbar memories having spaced-apart key nanowires, spaced-apart value nanowires adjacent to the key nanowires, ... | 02/24/2009 |
| 7492624 | Method and device for demultiplexing a crossbar non-volatile memory A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality of cross-points, hosting plural memory cells. A first electrode and a ... | 02/17/2009 |
| 7489537 | Nano-electronic memory array A memory device includes an array of memory cells disposed in rows and columns and constructed over a substrate, each memory cell comprising a first signal electrode, a second signal electrode, and a nano-layer disposed in the intersecting region between the first s... | 02/10/2009 |
| 7408184 | Functional molecular element and functional molecular device A functional molecular element whose functions can be controlled by an electric field based on a new principle. A Lewis base molecule (14) with positive permittivity anisotropy or a dipole moment in the major axis direction of the molecule is disposed, via a ... | 08/05/2008 |
| 7394687 | Non-volatile-shadow latch using a nanotube switch A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the correspondin... | 07/01/2008 |
| 7385839 | Memory devices using carbon nanotube (CNT) technologies Structures and methods for operating the same. The structure includes (a) a substrate; (b) a first and second electrode regions on the substrate; and (c) a third electrode region disposed between the first and second electrode regions. In response to a first write v... | 06/10/2008 |
| 7382648 | Nanomechanical switching device A nanomechanical device includes a nanostructure, such as a MWNT, located between two electrodes. The device switches from an OFF state to an ON state by extension of at least one inner shell of the nanostructure relative to at least one outer shell of the nanostruc... | 06/03/2008 |
