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| Number | Title | Issue Date |
| 4974204 | Non-volatile programmable interconnection circuit A programmable interconnection circuit includes first and second ferroelectric capacitors which differentially store the programming state of the circuit. A principal application of the circuit is in the programming of cells within a gate array integrated... | 11/27/1990 |
| 4945514 | Method of bistable optical information storage using antiferroelectric phase PLZT ceramics A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switc... | 07/31/1990 |
| 4918654 | SRAM with programmable capacitance divider A transpolarizer is employed as a programmable capacitance divider. Two ferroelectric capacitors are coupled in series to form a common node and two extreme poles. The polarization of the two capacitors is set by grounding the two poles and then bringing ... | 04/17/1990 |
| 4914627 | One transistor memory cell with programmable capacitance divider A transpolarizer is employed as a programmable capacitance divider. Two ferroelectric capacitors are coupled in series to form a common node and two extreme poles. The polarization of the two capacitors is set by grounding the two poles and then bringing ... | 04/03/1990 |
| 4910708 | Dram with programmable capacitance divider A transpolarizer is employed as a programmable capacitance divider. Two ferroelectric capacitors are coupled in series to form a common node and two extreme poles. The polarization of the two capacitors is set by grounding the two poles and then bringing ... | 03/20/1990 |
| 4893272 | Ferroelectric retention method Polarization retention of a ferroelectric material in a memory cell is improved by open circuiting the write pulse. The depolarizing field is reduced by allowing charge to dissipate through the ferroelectric material, causing a polarizing field.... | 01/09/1990 |
| 4888630 | Floating-gate transistor with a non-linear intergate dielectric A non-volatile memory cell having a floating-gate transistor is disclosed, which has a ferroelectric material for the dielectric between the floating gate electrode and the control gate electrode. The ferroelectric material provides for non-linear capacit... | 12/19/1989 |
| 4888733 | Non-volatile memory cell and sensing method A ferroelectric memory cell has one capacitor isolated from bit lines by two transistors, one on each side. The cell is read by pulsing the capacitor in one direction, then the other, storing developed charge on other capacitors or the like, and comparing... | 12/19/1989 |
| 4873664 | Self restoring ferroelectric memory A semiconductor memory uses cells with a ferroelectric capacitor having one plate coupled to a bit line by a FET and another plate coupled to a plate line. A pulse on the plate line causes the bit line to change voltage based on the state of the cell. A d... | 10/10/1989 |
| 4860254 | Non-volatile electronic memory A volatile semiconductor memory module (RAM) is combined with a permanent memory based on an electrically polarizable, preferably ferroelectric, layer within an integrated monolithic module in such a manner that, as a result of a STORE command, the inform... | 08/22/1989 |
| 4853893 | Data storage device and method of using a ferroelectric capacitance divider A transpolarizer is employed as a programmable capacitance divider. Two ferroelectric capacitors are coupled in series to form a common node and two extreme poles. The polarization of the two capacitors is set by grounding the two poles and then bringing ... | 08/01/1989 |
| 4391901 | Photosensitivity enhancement of PLZT ceramics by positive ion implantation The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the P... | 07/05/1983 |
| 4360896 | Write mode circuitry for photovoltaic ferroelectric memory cell Non-volatile semiconductor matrix random access and electrically alterable rogrammable read-only memories are disclosed. Each memory cell of the matrix memory includes a photovoltaic ferroelectric element which is remanently polarized with a write signal, ... | 11/23/1982 |
| 4348611 | Ferroelectric or pyroelectric sensor utilizing a sodium nitrite layer A pyroelectric or ferroelectric sensing element consists of a substrate with a thin layer of sodium nitrite. Electrodes may be applied to both sides of the sodium nitrite layer, or, alternatively, only one electrode may be used. In one embodiment, an arra... | 09/07/1982 |
| 4262339 | Ferroelectric digital device Digital devices such as, e.g., shift registers and logical gates are disclosed which are predicated on domain wall motion in a film of a ferroelectric material, such as, e.g., gadolinium molybdate or lead germanate. Disclosed devices comprise electrodes o... | 04/14/1981 |
| 4259728 | Ferroelectric analog device Analog readout devices are disclosed which utilize domain wall motion in a film of ferroelectric material to produce an electrical signal having a desired waveform. Disclosed devices comprise electrodes disposed on facing sides of the film, at least one e... | 03/31/1981 |
| 4195355 | Process for manufacturing a ferroelectric device and devices manufactured thereby A process for manufacturing a ferroelectric device includes the steps of chemically cleaning a substrate, followed by radio frequency etching of the substrate. The substrate is then pre-heated. A first electrical contact is then formed on the substrate, a... | 03/25/1980 |
| 4185322 | Elimination of noise in the operation of a stress controlled memory Data can be stored in a 1,2, or 3-dimensional memory by lining up the permanent dipole of small particles using a superposition of ultrasonic pulses and applied fields. Signals due to dipole orientation changes in particles with lower coercive fields than... | 01/22/1980 |
| 4169258 | One-third selection scheme for addressing a ferroelectric matrix arrangement An improved scheme for selectively addressing a matrix arrangement comprised of ferroelectrics having x and y orthogonally disposed intersecting lines. A one-third selection scheme is utilized that includes normalized selection signals having amplitudes: ... | 09/25/1979 |
| 4161038 | Complementary metal-ferroelectric semiconductor transistor structure and a matrix of such transistor structure for performing a comparison A complementary metal-ferroelectric-semiconductor transistor structure (MFST) in which an n-channel MFST is electrically coupled to a p-channel MFST in complementary fashion with the source of the n-channel MFST connected to the drain of the p-channel MFS... | 07/10/1979 |
| 4158201 | Flat electro optic display panel and method of using same A flat PLZT plate is utilized to form erasable images thereon which images may be projected or viewed directly. One embodiment includes electrically conductive islands on one side of the PLZT plate which are surrounded by and electrically isolated from an... | 06/12/1979 |
| 4144591 | Memory transistor A memory transistor in which a photovoltaic-ferroelectric element is conned between the gate and source of a field effect transistor. The element stores a remanent polarization in a direction corresponding to the polarity of a voltage to be applied to th... | 03/13/1979 |
| 4103341 | Ferroelectric photovoltaic method and apparatus for transferring information A method of transferring remanent polarization information from a photovoic ferroelectric unit to a polarizable unit which may either be another portion of the photovoltaic ferroelectric material or a separate piece of material. The photovoltaic ferroele... | 07/25/1978 |
| 4086124 | Method of polarization of a ferroelectric material In a method of polarization of a ferroelectric material having a Curie point at a temperature Tc, the material is brought to a temperature above Tc, subjected to a temperature gradient and then returned to a temperature below the Cur... | 04/25/1978 |
| 4075706 | Surface wave devices for processing signals A continuously programmable matched filter device using a piezoelectric substrate capable of propagating acoustic wave signals on a selected surface thereof and a semiconductor substrate mounted adjacent and spaced from such surface. Means are provided fo... | 02/21/1978 |
| 4031525 | Process for recording and reproduction of information in electromagnetic form A process for the storage and retrieval of information in electromagnetic form from an information carrier, made of ferromagnetic, ferrimagnetic, antiferrimagnetic, metamagnetic ferroelectric or antiferroelectric material. An information carrier builds up... | 06/21/1977 |
| 3990057 | Ferroelectric analog memory device and method of operating the same For recording analog information, a voltage is applied to a ferroelectric material plate as a synchronizing signal, the voltage having an amplitude equal at least to that of the threshold voltage for switching the polarization of the ferroelectric materia... | 11/02/1976 |
| 3978458 | Selectively erasable optical memory system utilizing a photo excitable ferroelectric storage plate The present invention relates to photo excitable ferroelectric optical memory system designed to store, erase, and display light traces. In accordance with the invention, there is provided a system wherein a photo-ferroelectric plate is placed between a p... | 08/31/1976 |
| 3964033 | Electrooptic storage device An electrooptic storage device having a transparent, ferroelectric ceramic plate, one pair of writing electrodes on opposite surfaces of the ferroelectric ceramic plate, respectively, and one pair of erasing electrodes on opposite edges, respectively of t... | 06/15/1976 |
| 3958230 | Arrangement including a piezo-ferroelectric body For reducing or preventing unwanted variations at adjacent storage electrodes upon polarization or depolarization of one of the storage electrodes on a PXE body a storage electrode terminating impedance is proposed of a special value.... | 05/18/1976 |
| 3953109 | Domain switching element In an irregular ferroelectric crystal plate having a domain switching element, the domain is made to grow unilaterally in a desired direction only, so that the domain wall is made movable in a desired direction only. The invention pertains also to a metho... | 04/27/1976 |
| 3936146 | Irregular ferroelectric element for controllable single domain An element in which only a single domain-wall can move sidewise, having a crystal plate of an irregular ferroelectric which is cut in the Z-plane at opposite surfaces and is then cut or cleaved in the direction at its periphery and transparent elect... | 02/03/1976 |
