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| Number | Title | Issue Date |
| 7405958 | Magnetic memory device having XP cell and Str cell in one chip According to the semiconductor memory device of this invention, an XP type MRAM cell array and an STr type MRAM cell array are formed on a single chip. The XP type MRAM cell array is laid over the STr type MRAM cell array to form a layered structure. The STr type MR... | 07/29/2008 |
| 7244369 | Method for producing active or passive components on a polymer basis for integrated optical devices “A process for fabricating active and passive, polymer-based components for use in integrated optics. As a result of this process, active and passive optoelectronic components of a high quality having a high level of integration and high packing density are fabric... | 07/17/2007 |
| 7075819 | Closed flux magnetic memory A closed flux magnetic memory cell has a ferromagnetic pinned structure and a ferromagnetic free structure. Data is stored by controlling the relative magnetization between the pinned and free structures. The free structure is formed as a horizontally extending toro... | 07/11/2006 |
| 6885576 | Closed flux magnetic memory A closed flux magnetic memory cell has a ferromagnetic pinned structure and a ferromagnetic free structure. Data is stored by controlling the relative magnetization between the pinned and free structures. The free structure is formed as a horizontally extending toro... | 04/26/2005 |
| 6881623 | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device A chalcogenide material is formed to a first thickness over the first conductive electrode material. The chalcogenide material includes AxBy. A layer that includes a metal is formed to a second thickness over the chalcogenide material. The meta... | 04/19/2005 |
| 5536589 | Magneto-optical recording medium A magneto-optical recording medium on which rewriting is possible is composed of a substrate and a recording layer exhibiting perpendicular anisotropy formed thereon. The recording layer consists of at least a transition-metal layer and a rare-earth-metal... | 07/16/1996 |
