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Neuroimaging as a Marketing Tool
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| Number | Title | Issue Date |
| 8102693 | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical ... | 01/24/2012 |
| 8054671 | Methods of making quantum dot films Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical ... | 11/08/2011 |
| 8050078 | Nanowire-based memristor devices Embodiments of the present invention are directed to memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes a first electrode, a second electrode, and a nanowire disposed between the first electrode and the se... | 11/01/2011 |
| 8042082 | Three dimensional memory in a system on a chip The invention relates to multi-planar memory components in a three-dimensional integrated circuit system configuration. A multi-planar memory system consisting of a plurality of memory circuit planes in a three-dimensional system on a chip (3D SoC) comprised of a pl... | 10/18/2011 |
| 8023306 | Electronic and optoelectronic devices with quantum dot films Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical ... | 09/20/2011 |
| 7990748 | Information holding method In an information holding method according to the present invention, plural blocks are defined by an evenly sectioned surface of a sheet material in predefined positions, and predetermined information is expressed in the whole area of the sheet material by the prese... | 08/02/2011 |
| 7986543 | Method for achieving very high bandwidth between the levels of a cache hierarchy in 3-dimensional structures, and a 3-dimensional structure resulting therefrom A method of electronic computing, and more specifically, a method of design of cache hierarchies in 3-dimensional chips, and a cache hierarchy resulting therefrom, including a physical arrangement of bits in cache hierarchies implemented in 3 dimensions such that th... | 07/26/2011 |
| 7881091 | Methods of making quantum dot films Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical ... | 02/01/2011 |
| 7773404 | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical ... | 08/10/2010 |
| 7768810 | Radiation tolerant SRAM bit In an integrated circuit, a radiation tolerant static random access memory device comprising a first inverter having an input and an output, a second inverter having an input and an output. A first resistor is coupled between the output of the first inverter and the... | 08/03/2010 |
| 7746681 | Methods of making quantum dot films Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical ... | 06/29/2010 |
| 7742322 | Electronic and optoelectronic devices with quantum dot films Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical ... | 06/22/2010 |
| 7742323 | Continuous plane of thin-film materials for a two-terminal cross-point memory A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conducto... | 06/22/2010 |
| 7660145 | Storage device and semiconductor device An object of the present invention is to provide nonvolatile, rewritable, easily-manufactured, and inexpensive storage element, storage device, and semiconductor device, which are superior in switching characteristics and which has low operation voltage. In an eleme... | 02/09/2010 |
| 7616470 | Method for achieving very high bandwidth between the levels of a cache hierarchy in 3-dimensional structures, and a 3-dimensional structure resulting therefrom A method of electronic computing, and more specifically, a method of design of cache hierarchies in 3-dimensional chips, and a cache hierarchy resulting therefrom, including a physical arrangement of bits in cache hierarchies implemented in 3 dimensions such that th... | 11/10/2009 |
| 7502246 | Structure for ballistic transistor memory cell A ballistic memory cell structure employing ballistic transistor technology for switching between a read state and a store state is disclosed. The memory cell structure includes substrate structures forming a side wall and a main chamber for defining a linear ballis... | 03/10/2009 |
| 7421591 | Data flow control system and method for conserving power in a power managed system A system and method for conserving power in a power managed information handling system are provided. While the host unit or central processing unit of the information handling system is in a reduced power state, the communication controller maintains received data ... | 09/02/2008 |
| 7385381 | Sensor manufacture with data storage A biometric sensing device includes a sensor manufacture for sensing a biometric stimulus. The sensor manufacture is also configured to persistently store data electronically, such as security data. ... | 06/10/2008 |
| 7365398 | Compact SRAMs and other multiple transistor structures A highly dense form of static random-access memory (SRAM) takes advantage of transistor gates on both sides of silicon and high interconnectivity made possible by the complex form of silicon-on-insulator and three-dimensional integration. This technology allows one ... | 04/29/2008 |
| 7359237 | High write selectivity and low power magnetic random access memory and method for fabricating the same A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells a... | 04/15/2008 |
| 7355879 | Semiconductor integrated circuit, operating method thereof, and IC card including the circuit One main electrode of a TFT is connected with one terminal of a two-terminal type nonvolatile memory element, a gate electrode of the TFT is connected with a word line, and the other main electrode thereof is connected with a bit line. The other terminal of the memo... | 04/08/2008 |
| 7352608 | Controllable nanomechanical memory element A memory device includes a mechanical element that exhibits distinct bistable states under amplitude modulation. The states are dynamically bistable or multi-stable with the application of a drive signal of a given frequency. The natural resonance of the element in ... | 04/01/2008 |
| 7349236 | Electromechanical memory cell with torsional movement A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, ele... | 03/25/2008 |
| 7342818 | Hybrid circuit having nanotube electromechanical memory A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An acces... | 03/11/2008 |
| 7335395 | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to cre... | 02/26/2008 |
| 7319057 | Phase change material memory device A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the f... | 01/15/2008 |
| 7301802 | Circuit arrays having cells with combinations of transistors and nanotube switching elements Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line,... | 11/27/2007 |
| 7280394 | Field effect devices having a drain controlled via a nanotube switching element Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconducto... | 10/09/2007 |
| 7277348 | Memory cell comprising an OTP nonvolatile memory unit and a SRAM unit Memory cells including an SRAM and an OTP memory unit that combine the advantages of both technologies and can be fabricated by standard CMOS manufacturing without additional masking. The concepts and details may be applied to and utilized in other systems requiring... | 10/02/2007 |
| 7277317 | MRAM architecture for low power consumption and high selectivity The present invention provides a magnetoresistive memory cell (30), comprising a magnetoresistive memory element (31), a first current line (32) and a second current line (33), the first and the second current line (32, 33) crossin... | 10/02/2007 |
| 7244374 | Composite and method of manufacturing the same Provided are: a composite formed by mixing a carbon nanotube structure and a metal-containing material, the carbon nanotube structure having a network structure constructed by mutually cross-linking functional groups bonded to plural carbon nanotubes through chemica... | 07/17/2007 |
| 7211854 | Field effect devices having a gate controlled via a nanotube switching element Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a r... | 05/01/2007 |
| 7209019 | Switch A switch comprises voltage applying means for providing direct current potentials to first to third beams arranged with a spacing slightly distant one from another, and electrodes for inputting/outputting signals to/from the beams. By controlling the direct current ... | 04/24/2007 |
| 7203791 | Flash memory device with partial copy-back mode The disclosure is NAND flash memory device with a partial copy-back mode, comprised of a cell array constructed of pages, a page buffer block composed of page buffers storing data in correspondence with the pages, a selection circuit for designating one or more page... | 04/10/2007 |
| 7199498 | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same Electromechanical systems utilizing suspended conducting nanometer-scale beams are provided and may be used in applications, such as, motors, generators, pumps, fans, compressors, propulsion systems, transmitters, receivers, heat engines, heat pumps, magnetic field ... | 04/03/2007 |
| 7196450 | Electromechanical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same Electromechanical systems utilizing suspended conducting nanometer-scale beams are provided and may be used in applications, such as, motors, generators, pumps, fans, compressors, propulsion systems, transmitters, receivers, heat engines, heat pumps, magnetic field ... | 03/27/2007 |
| 7181811 | Micro-fastening system and method of manufacture This application relates to a micro-fastening system and, more particularly, to a mechanical micro-fastening system employing a plurality of mating nanoscale fastening elements (16, 18) and a method of manufacturing a micro-fastening system. The mating nanosc... | 02/27/2007 |
| 7176505 | Electromechanical three-trace junction devices Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the f... | 02/13/2007 |
| 7173314 | Storage device having a probe and a storage cell with moveable parts A storage device comprises a probe and storage cell having moveable parts that are actuatable to plural positions to represent respective different data states. The probe interacts with the moveable parts to selectively actuate the moveable parts to the plural posit... | 02/06/2007 |
| 7170772 | Apparatus and method for dynamic control of double gate devices An apparatus for implementing dynamic control of a double gate semiconductor device includes a first switch configured to selectively couple a first gate input of the double gate device to a second gate input of the double gate device, and a second switch configured... | 01/30/2007 |
