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An armor with rollers is provided that enables a user to move in all positions by rolling on a hard and smooth surface while constantly varying his bearing points on the ground.
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| Number | Title | Issue Date |
| 7436689 | Non-volatile semiconductor memory When an address storing/comparing circuit stores no address identical to an external input address in read operation, in a main memory read data is written back to a data storing area after data read therefrom, and data indicating a sum of a predetermined value and ... | 10/14/2008 |
| 7428162 | Memory device including a plurality of capacitors A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer... | 09/23/2008 |
| 7405959 | Ferroelectric memory device A ferroelectric memory device includes memory cells using ferroelectric capacitors provided at intersections of local bit lines associated with a main bit line and word lines. The ferroelectric memory device includes: first and second local bit lines associated with... | 07/29/2008 |
| 7366005 | Ferroelectric memory device and display-driving IC A ferroelectric memory device including: a first bit line which extends, from one end toward another end thereof, in a first direction; a plurality of first memory cells, which are connected to the first bit line and store predetermined data; a second bit line which... | 04/29/2008 |
| 7307872 | Nonvolatile semiconductor static random access memory device A nonvolatile semiconductor memory device obtained by combining a nonvolatile memory device with a SRAM is provided to improve operating speed and reliability. The nonvolatile semiconductor memory device includes a plurality of data registers. Preferably, each of th... | 12/11/2007 |
| 7304880 | Electric switch and memory device using the same An electric switch includes a ferroelectric substrate to which metal is added, a pair of electrodes provided on the ferroelectric substrate, and an electric field applying portion for changing the direction of polarization in part of the ferroelectric substrate.... | 12/04/2007 |
| 7301795 | Accelerated low power fatigue testing of FRAM Systems and methods fatigue a ferroelectric memory device. Within a single cycle, a group of selected ferroelectric memory cells is fatigued by reading a first logical value from the cells while also writing a second logical value to the memory cells. The first logi... | 11/27/2007 |
| 7283388 | Memory device using multiple layer nano tube cell A memory device features a multiple layer nano tube cell. In the memory device, a cross point cell array including a capacitor and a PNPN nano tube switch is effectively arranged to reduce the whole memory size. Also, in the memory device, the nano tube cell array i... | 10/16/2007 |
| 7283382 | Minimization of signal loss due to self-erase of imprinted data The effects of a self-erase phenomenon when accessing imprinted ferroelectric memory cells that have non-conductive electrode interfaces that reduce remnant polarization and decrease signal margin are eliminated. A self-erase control pulse asserted after an access p... | 10/16/2007 |
| 7276755 | Integrated circuit and method of manufacture An integrated circuit having a plurality of active areas separated from each other by a field region and a method for manufacturing the integrated circuit. A first polysilicon finger is formed over the first active area and the field region and a second polysilicon ... | 10/02/2007 |
| 7266007 | Device structure of ferroelectric memory and nondestructive reading method A method for reading a nondestructive readout type ferroelectric memory device including a process in which 1-bit data is written in a pair of a cell for storage and a cell for reference disposed in series in the ferroelectric memory device, and a process in which a... | 09/04/2007 |
| 7253466 | Crossbar array microelectronic electrochemical cells The present invention provides microelectronic electrochemical structures and related fabrication methods. A composite microelectronic structure is provided that includes first and second conductors dielectrically isolated from one another at a crossing thereof, the... | 08/07/2007 |
| 7227770 | Ferroelectric-type nonvolatile semiconductor memory A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells, each memory cell comprising a first electrode, a ferroelectric layer formed at least on said first electrode... | 06/05/2007 |
| 7215567 | Ferroelectric memory device To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life. The present invention is provided with an MFSFET 100 having a ferroelectric thin film at its gate portion, word line 104 | 05/08/2007 |
| 7211851 | Ferroelectric memory A ferroelectric memory comprises a first transistor connected between N1 and N2 nodes, a second transistor connected between the N2 node and an N3 node, a first transistor connected between P1 and P2 nodes, a second transist... | 05/01/2007 |
| 7203128 | Ferroelectric memory device and electronic apparatus A ferroelectric memory device characterized in comprising: a voltage source for generating a predetermined voltage; a first bit line and a second bit line; a first ferroelectric capacitor having one end electrically connected to the first bit line; a first resistanc... | 04/10/2007 |
| 7203103 | Ferroelectric memory device and electronic apparatus A ferroelectric memory device equipped with: a voltage source for generating a predetermined voltage; a first ferroelectric capacitor having one end electrically connected to a first bit line; a first resistance having a first resistance value, provided between the ... | 04/10/2007 |
| 7196834 | Transparent flat body This invention relates to a transparent flat body including two transparent cover layers (1, 2) that confine between them an active layer (3) whose transparency varies in an electric field and disposed between two electrode layers (6, 7) optiona... | 03/27/2007 |
| 7184294 | Ferroelectric-type nonvolatile semiconductor memory A ferroelectric-type nonvolatile semiconductor memory comprising: first and second memory units having bit lines, transistors for selection, sub-memory units composed of memory cells, and plate lines shared between the sub-memory units, wherein the fir... | 02/27/2007 |
| 7177174 | Ferroelectric memory device having a reference voltage generating circuit A ferroelectric memory device includes a plurality of memory cells, each memory cell includes a ferroelectric capacitor and a transistor, a plate line drive unit capable of providing a first voltage to the memory cell array in response to a plate line drive signal, ... | 02/13/2007 |
| 7173842 | Metal heater for in situ heating and crystallization of ferroelectric polymer memory film An embodiment of the invention provides an on-chip heating system to both initially anneal and revive cycle-fatigued polymer ferroelectric materials utilized in memory devices. By heating the polymer ferroelectric material above its Curie temperature, the polymer fe... | 02/06/2007 |
| 7173843 | Serial diode cell and nonvolatile memory device using the same A nonvolatile memory device features a serial diode cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a serial diode chain. The serial diode cell comprises a ferroelectric capacitor and a serial diode switch. The ferroelectric capacitor, loc... | 02/06/2007 |
| 7151659 | Gapped-plate capacitor In a semiconductor device, a capacitor is provided which has a gap in at least one of its plates. The gap is small enough so that fringe capacitance between the sides of this gap and the opposing plate at least compensates, if not overcompensates, for the missing co... | 12/19/2006 |
| 7149137 | Process monitoring for ferroelectric memory devices with in-line retention test The present invention facilitates evaluation of ferroelectric memory devices. A ferroelectric memory device is fabricated that comprises memory cells comprising ferroelectric capacitors (802). A short delay polarization value is obtained (804) by writi... | 12/12/2006 |
| 7130208 | Ferroelectric-type nonvolatile semiconductor memory A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells, each memory cell comprising a first electrode, a ferroelectric layer formed at least on said first electrode... | 10/31/2006 |
| 7109409 | Magnetic field enhanced photovoltaic device A magnetic field enhanced photovoltaic device includes a photoelectric conversion layer, a first electrode, a second electrode, a ferro-antiferromagnetic exchange coupling layer and an applied magnetic field. The first electrode and the second electrode are respecti... | 09/19/2006 |
| 7106615 | FeRAM capable of restoring “0” data and “1” data at a time A semiconductor memory device includes a first memory cell block that has one end connected to the first bit line and the other end connected to a common node, the first memory cell block including a plurality of series-connected unit cells, and a second memory cell... | 09/12/2006 |
| 7097438 | Foaming agent charging and mixing device A foaming agent charging and mixing device comprises at least one mixing device and one foaming agent metering device, wherein the foaming agent charging and mixing device may be arranged between an plasticating screw and a mold. In order to improve the foaming agen... | 08/29/2006 |
| 7075819 | Closed flux magnetic memory A closed flux magnetic memory cell has a ferromagnetic pinned structure and a ferromagnetic free structure. Data is stored by controlling the relative magnetization between the pinned and free structures. The free structure is formed as a horizontally extending toro... | 07/11/2006 |
| 7072203 | Hybrid switch cell and memory device using the same A nonvolatile memory device features a hybrid switch cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a hybrid switch. The hybrid switch cell comprises a ferroelectric capacitor and a hybrid switch. The ferroelectric capacitor, located wher... | 07/04/2006 |
| 7065033 | Dielectric recording medium, and method of and apparatus for producing the same A dielectric recording medium is provided with three layers of: a dielectric material, an electric conductor, and a substrate, and has a groove on the recording surface of the dielectric material. The groove is provided with one or a plurality of grooves. When a vol... | 06/20/2006 |
| 7046420 | MEM micro-structures and methods of making the same A device comprising an array of free metal ribbons that are coupled to a substrate through ceramic support structures is disclosed. The device is preferably an optical MEM device, wherein a first set of free metal ribbons are configured to move relative to a second ... | 05/16/2006 |
| 7042611 | Pre-deflected bias ribbons A modulator for and a method of modulating an incident beam of light including means for supporting a plurality of active elements and a plurality of bias elements, each active and bias element including a light reflective planar surface with the light reflective pl... | 05/09/2006 |
| 7026676 | Memory array having a layer with electrical conductivity anisotropy A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness di... | 04/11/2006 |
| 7012828 | Data control device using a nonvolatile ferroelectric memory A data control device using a nonvolatile ferroelectric memory stores radio data having different types in a memory cell, thereby reducing a chip size. In the data control device, radio data such as image data, sound data and other data encoded as analog signals are... | 03/14/2006 |
| 7009275 | Method for making high density nonvolatile memory An improved method for fabricating a three dimensional monolithic memory with increased density. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements preferably compr... | 03/07/2006 |
| 7009867 | Ferroelectric-type nonvolatile semiconductor memory A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells, each memory cell comprising a first electrode, a ferroelectric layer formed at least on said first electrode... | 03/07/2006 |
| 7002835 | Memory cell and semiconductor memory device Aspects of the invention can prevent delay in output timing of inverted data for each of ferroelectric capacitors, there can be provided NMOSs that can electrically connect upper electrodes of the ferroelectric capacitor with a plate line and electrically connect lo... | 02/21/2006 |
| 6952030 | High-density three-dimensional memory cell A three dimensional monolithic memory comprising a memory cell allowing for increased density is disclosed. In the memory cell of the present invention, a bottom conductor preferably comprising tungsten is formed. Above the bottom conductor a semiconductor element p... | 10/04/2005 |
| 6944044 | Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrix The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depl... | 09/13/2005 |
