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| Number | Title | Issue Date |
| 7385835 | Membrane 3D IC fabrication General purpose methods for the fabrication of 5 integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconducto... | 06/10/2008 |
| 7367119 | Method for forming a reinforced tip for a probe storage device Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther... | 05/06/2008 |
| 7365387 | Gate-coupled EPROM cell for printhead An EPROM cell in a printhead control circuit for an inkjet printer, having exactly one polysilicon layer and a conductive layer disposed above the polysilicon layer, includes a control transistor and an EPROM transistor. The control and EPROM transistors each have f... | 04/29/2008 |
| 7352007 | Phosphorescent nanotube memory device An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel. ... | 04/01/2008 |
| 7336524 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact pro... | 02/26/2008 |
| 7309630 | Method for forming patterned media for a high density data storage device Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a m... | 12/18/2007 |
| 7301887 | Methods for erasing bit cells in a high density data storage device Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip hav... | 11/27/2007 |
| 7233517 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises an atomic probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the atomic probe can include a core having a conductive coating. The core can compris... | 06/19/2007 |
| 7196328 | Nanomachining method and apparatus Methods and apparatus are disclosed for nanomachining operations. Excitation energy settings are provided to minimize machine induced scan cutting. Cut operations can be operated in a feedback mode to provide controlled cutting operations. Measurement and sweep tech... | 03/27/2007 |
| 7122837 | Structures formed in diamond N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V cente... | 10/17/2006 |
| 7067008 | Process for the production of Cd XTe semiconductor crystals with high resistivity and resulting crystalline material Process for the production of semiconductor crystals with high resistivity of the CdXTe type, wherein X=Zn, Se, ZnSe or 0, characterized in that it consists in carrying out a multiple doping with iron and with at least one second doping element selected from the gro... | 06/27/2006 |
| 7031181 | Multi-pulse reset write scheme for phase-change memories A memory cell device and method that includes a memory cell, and first and second write pulse signals. The memory cell has phase-change material capable of being set and capable of being reset. The first and second write pulse signals are used for a single reset ope... | 04/18/2006 |
| 6982898 | Molecular memory integrated circuit utilizing non-vibrating cantilevers Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators capable of moving one or more platforms. In one embodiment the platforms can include either a memory device or a Molecular Array R... | 01/03/2006 |
| 6917026 | Radiation-image readout apparatus and line sensor to be deployed therein A radiation-image data readout apparatus in which the charge transferring time occurring during a readout operation utilizing a line sensor having a broad-width light-receiving portion is shortened is provided. A line sensor having two photodiode portions, each havi... | 07/12/2005 |
| 6891749 | Resistance variable ‘on ’ memory A resistance variable memory element and method for stabilizing the resistance variable memory element by providing a first and second electrode connected to a resistance variable material whereby the first and second electrodes comprise materials capable of providi... | 05/10/2005 |
| 6873560 | Optical memory device An optical memory device includes a plurality of optical memory cells, at least one wavelength filter, at least one read/write/erase filter, and a plurality of optical strands, wherein each optical memory cell stores and transmits data in optical form. The optical m... | 03/29/2005 |
| 6768666 | Phase angle controlled stationary elements for wavefront engineering of electromagnetic radiation A reconfigurable and stationary element for the engineering of the wavefront of electromagnetic radiation. The element includes a phase change material that may be reversibly transformed between its crystalline and amorphous states. By forming a gradient in crystall... | 07/27/2004 |
| 6639825 | Data memory The data memory device has a plurality of memory cells for storing data which are represented by a first physical value of the storing memory elements, especially their conductivity or charge. The memory elements are, for example, storage capacitors. A de... | 10/28/2003 |
| 6602671 | Semiconductor nanocrystals for inventory control A novel encoding system, compositions for use therein and methods for determining the source, location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a collection of one or more siz... | 08/05/2003 |
| 6535418 | Optically programmable address logic for solid state diode-based memory A level of a solid state memory device includes main memory and address logic. The address logic is programmed by causing current to flow through an address element of the logic; and irradiating the address element so that the address element changes resi... | 03/18/2003 |
| 6514435 | High density and fast persistent spectral holeburning in II-VI compounds for optical data storage High density, photon-gated persistent spectral holeburning is effectuated in rare earth doped II-VI compounds such as MgS, CaS, BaS and SrS. Two-photon ionization of rare earth ions is performed, selected by a narrow band laser, producing narrow regions o... | 02/04/2003 |
| 6005791 | Optical logic element and optical logic device Addressable optical logic elements contain an optical memory substance, wherein, under the influence of an impressed magnetic, electromagnetic or electrical field or supplied energy, the memory substance can transfer from one physical or chemical state to... | 12/21/1999 |
| 5875052 | Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials Spatially localized radiation, preferably ultraviolet visible radiation, representing information is impinged onto a spatially localized area of a heterostructure comprising a ternary Group III-V Nitride semiconductor material. It has been found that the ... | 02/23/1999 |
| 5740101 | Time-stable labeling of individual atoms or groups of atoms in the surface of a solid, and the storage of information units in the atomic range Abstract of the Disclosure: A process useful for information storage is described for the time-stable labeling of individual atoms or groups of atoms in the surface of a solid by locally removing individual atoms or group of atoms from the surface of a so... | 04/14/1998 |
| 5737281 | Data writing method and device of semiconductor device An ultraviolet laser beam emitted from a laser beam source 1 is subjected to on/off control at an AOM 3, is linearly scanned at an equal speed by a polygon mirror 5 and an f.THETA. lens 6, is collected by an object lens 7, and is selectively spot-irradiat... | 04/07/1998 |
| 5719407 | Collective element of quantum boxes A collective element of quantum boxes includes a plurality of the first quantum boxes (QD1) arranged within the first surface, between which conduction of electrons is allowed, a plurality of the second quantum boxes (QD2) arranged w... | 02/17/1998 |
| 5627815 | Precision machining method precision machining apparatus and data storage apparatus using the same A method and apparatus for precision machining a surface suitable for use as a data recorder, using a scanning probe microscope (SPM) capable of observing an electrically insulating surface. The SPM includes a probe which comprises a tip having a pointed ... | 05/06/1997 |
| 5517151 | Intensity controlling circuit having fuses and EPROMs for LED-array head An intensity controlling circuit device can correct variation in intensity of light beams, due to tolerance occurred in each of a plurality of LED-array chips, emitted by LEDs provided in each of the LED-array chips. The intensity controlling circuit devi... | 05/14/1996 |
| 5499206 | Semiconductor optical memory device for optical storage of information with increased recording density A semiconductor optical memory device includes a semiconductor layer formed with a plurality of elemental recording areas each having a size generally equal to a wavelength of the optical beam. A plurality of quantized regions are formed in each elemental... | 03/12/1996 |
| 5440148 | Quantum operational device A quantum operational device includes a plurality of quantum boxes arranged in a plurality of stages isolated by a distance which permits tunnelling of electrons or holes through the distance, uses as bit information the presence or absence of an electron... | 08/08/1995 |
| 5439777 | Recording and reproducing apparatus and method for applying a pulse voltage and an electromagnetic wave A recording-reproducing apparatus includes an electrode, a material that changes its intramolecular electron distribution upon the application of electromagnetic wave irradiation and an electric field provided on the electrode, and an electrically conduct... | 08/08/1995 |
| 5384728 | Optical information storage apparatus using optical fiber An optical information storage apparatus includes an optical switch element and an optical fiber. The optical switch element receives an optical input and outputs an optical output only when the optical input is equal to or greater than a predetermined va... | 01/24/1995 |
| 5371698 | Random access optical memory The multi-dimensional optical memory utilizes the wavelength and intensity dimensions to effect a high density record. With incorporation of a broadband light source, scanning monochromator and photo detector array, a high speed random access optical memo... | 12/06/1994 |
| 5355127 | Method and apparatus for transferring information by utilizing electron beam In a method and apparatus for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal f... | 10/11/1994 |
| 5351209 | Apparatus for converting optical information into electrical information signal, information storage element and method for storing information in the information storage element An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion ... | 09/27/1994 |
| 5272667 | Optical information recording apparatus for recording optical information in a phase change type optical recording medium and method therefor There is disclosed an optical information recording apparatus for recording optical information in a phase change type optical recording medium and a method therefor. The order of the atomic arrangement of the optical recording medium is capable of changi... | 12/21/1993 |
| 5262981 | Storage of information units in the nanometer range A process for the storage of information units in a nanometer range involves producing cup-like pits in a noble-metal surface.... | 11/16/1993 |
| 5235542 | Apparatus for converting optical information into electrical information signal, information storage element and method for storing information in the information storage element An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion ... | 08/10/1993 |
| 5233556 | Optoelectronic memory and logic device An optoelectronic memory and logic device has a function of a reset-set flip-flop (RS-FF) or an exclusive-OR (EOR) gate. The RS-FF includes a first and a second optical inverter circuits. The optical inverter circuit includes a parallel connection of a li... | 08/03/1993 |
| 5162819 | Information processing apparatus, information processing method, and recording medium employed therefor An information processing apparatus comprises a recording medium having at least an underlying electrode and a photoconductive thin film and having an insulating or semiconducting recording region capable of accumulating an electric charge; and a probe el... | 11/10/1992 |
