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| Number | Title | Issue Date |
| 5780375 | Thick film composition for modifying the electrical properties of a dielectric layer The invention is directed to a capacitor dielectric thick film composition comprising, by weight %: (1) 32-98% BaTiO3, (2) 2-60% zinc barium borate and (3) 0-8% Bi2 O3.... | 07/14/1998 |
| 5781404 | Electrode interface for high-dielectric-constant materials A preferred embodiment of this invention comprises a first thin dielectric buffer layer of a first leakage-current-density material (e.g. strontium titanate 32) with a first moderate-dielectric-constant, a high-dielectric-constant layer of a second leakag... | 07/14/1998 |
| 5774327 | High dielectric capacitors Capacitors and methods of fabricating high dielectric capacitors which do not create a step difference where the high dielectric material is formed are provided. These methods include forming a first electrode layer on an integrated circuit device substra... | 06/30/1998 |
| 5774326 | Multilayer capacitors using amorphous hydrogenated carbon A method of fabricating a multilayer capacitor includes depositing a plurality of electrode layers on a substrate alternately with a plurality of amorphous hydrogenated carbon dielectric layers, forming at least two holes in the electrode and dielectric l... | 06/30/1998 |
| 5771148 | Intercalation-based voltage variable capacitor A voltage variable capacitor (VVC) is made by placing an intercalation compound between two electrodes of a capacitor. The VVC has a reservoir of an intercalant in proximity with the intercalation compound. The two materials are chosen from those known to... | 06/23/1998 |
| 5771150 | Capacitor constructions A capacitor construction includes, i) a dense mass of electrically insulative oxide; ii) an electrically conductive inner capacitor plate overlying and contacting the electrically insulative oxide mass; iii) a capacitor dielectric layer overlying the inne... | 06/23/1998 |
| 5760432 | Thin film strained layer ferroelectric capacitors A capacitor having a first electrode and a dielectric material epitaxially deposited on a surface of the electrode to form a dielectric layer on the electrode. The dielectric material forming the dielectric layer has induced strain in the layer sufficient... | 06/02/1998 |
| 5757610 | Dielectric ceramic and monolithic ceramic electronic part using the same The present invention provides a nonreducing dielectric ceramic including a sintered compact composed of a plurality of particles expressed by a maximum diameter of about 0.5 μm and an average diameter of about 0.1 to 0.3 μm, each of the plurality of pa... | 05/26/1998 |
| 5757611 | Electronic package having buried passive components The invention provides for an electronic package having a buried passive component such as a capacitor therein, and a method for fabricating the same. The electronic package preferably includes a passive component portion which includes a plurality of lay... | 05/26/1998 |
| 5745336 | Capacitor for semiconductor integrated circuit A semiconductor integrated circuit apparatus according to the present invention has a capacitor formed in such a manner that a ferroelectric thin film is formed after a MOS transistor has been formed on a substrate thereof, a ferroelectric thin film made ... | 04/28/1998 |
| 5745335 | Multi-layer film capacitor structures and method A multi-layer film capacitor structure has a bottom electrode layer on a monolithic substrate, intermediate pairs of layers of film electrode and dielectric material overlying the bottom electrode, and a top pair of layers of a film electrode and film die... | 04/28/1998 |
| 5742473 | Monolithic ceramic capacitor Disclosed is a monolithic ceramic capacitor comprising dielectric ceramic layers made from a material which comprises an essential component of (1--ଲ){BaO}m.TiO.sub.2 +Re2 O3 +ଲ(Mn1-x-y... | 04/21/1998 |
| 5742472 | Stacked capacitors for integrated circuit devices and related methods A method for fabricating a capacitor on a substrate includes the steps of forming an insulating layer on the substrate, and forming the first plate electrode on the insulating layer. A first dielectric layer is then formed on the plate electrode, and a fi... | 04/21/1998 |
| 5739563 | Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switc... | 04/14/1998 |
| 5737180 | Ferroelectric capacitor structure A ferroelectric capacitor structure variously having ceramic lower and upper electrodes, lower and upper insert layers, metal lower and upper electrodes, and a ferroelectric. The ceramic electrode(s) are variously connected with a writing terminal, and th... | 04/07/1998 |
| 5734545 | Monolithic ceramic capacitor Disclosed is a monolithic ceramic capacitor comprising dielectric ceramic layers made from a material which comprises an essential component of (1--ଲ){BaO}m .cndot.TiO2 +Re2 O3 30 ଲ(Mn | 03/31/1998 |
| 5731220 | Method of making barium strontium titanate (BST) thin film by erbium donor doping A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of erbium dopant (1 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably dis... | 03/24/1998 |
| 5731950 | Monolithic ceramic capacitor Disclosed is a monolithic ceramic capacitor comprising dielectric ceramic layers made from a ceramic composition, which comprises an essential component of (1--ଲ) {BaO}m .multidot.TiO2 +{(1-x)M2 O3... | 03/24/1998 |
| 5731949 | Structure of capacitor and method of frabricating same A capacitor includes a substrate having a first trench, and a second trench, a first storage node having a first body and a first flange, the first body being on the first trench and having a first height and the first flange being extended at a top porti... | 03/24/1998 |
| 5706163 | ESD-protected thin film capacitor structures A thin film protected capacitor structure having a thin film capacitor and a protection device is provided on an integrated circuit wafer. The wafer has a low resistivity substrate of a first type disposed under an epitaxial layer of a second type differe... | 01/06/1998 |
| 5687055 | Conductive paste and its usage Thin, smooth conductive layers for internal electrodes of multilayer ceramic capacitors are produced by a method including the steps of forming a conductive paste layer on a green ceramic sheet with a conductive paste by screen printing so as to have a ce... | 11/11/1997 |
| 5680291 | Low-temperature sinterable dielectric composition with high dielectric constant and multi-layered ceramic capacitor using the same A low-temperature sinterable dielectric composition with a high dielectric constant is disclosed wherein x=2-4 mol %, y=0.5-3.0 mol % and z=3-5 mol % in 95PMN-5PT!-x(PbO)-y(CaO)-z(CuO).... | 10/21/1997 |
| 5679969 | Ferroelectric based capacitor for use in memory systems and method for fabricating the same A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirco... | 10/21/1997 |
| 5677825 | Ferroelectric capacitor with reduced imprint An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom... | 10/14/1997 |
| 5670808 | Metal oxide capacitor with a WNX electrode A semiconductor device in which an SiO2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure co... | 09/23/1997 |
| 5668694 | Multilayer ceramic chip capacitor The invention provides a multilayer ceramic chip capacitor which satisfies X7R property or a temperature response of its capacitance and shows a minimal change of capacitance with time under a DC electric field, a long accelerated life of insulation resis... | 09/16/1997 |
| 5659456 | Monolithic ceramic capacitors Disclosed is a monolithic ceramic capacitor comprising dielectric ceramic layers and inner electrodes wherein each dielectric ceramic layer comprises an essential component having a compositional formula of (1--ଲ)(BaO)m TiO2 | 08/19/1997 |
| 5635741 | Barium strontium titanate (BST) thin films by erbium donor doping A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of erbium dopant (1 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably dis... | 06/03/1997 |
| 5633781 | Isolated sidewall capacitor having a compound plate electrode A capacitor structure is provided, with a first conductor on top of a substrate having at least one layer of dielectric material thereon; a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first... | 05/27/1997 |
| 5629252 | Method for manufacturing a dielectric ceramic composition dielectric ceramic and multilayer high frequency device A dielectric ceramic composition that can be sintered at a low temperature of around 1000° C. and also can have a high dielectric constant, a high Q value and small temperature coefficient at a resonant frequency includes a glass component that promotes ... | 05/13/1997 |
| 5625529 | PZT thin films for ferroelectric capacitor and method for preparing the same PZT ferroelectric thin films for capacitors comprise a combination of a donor dopant and an acceptor dopant in a total amount of about 0.1 to 8 mole percent of PZT, or Sc alone in an amount of about 0.1 to 5 mole percent. Nb or Ta is employed as a donor d... | 04/29/1997 |
| 5622769 | Ceramic circuit board having a thermal conductivity substrate According to this invention, there is disclosed a thermal conductivity substrate which includes an aluminum nitride sintered body and a coating layer formed on the body of aluminum phosphate and having a surface roughness of 1 μm or less, and which has e... | 04/22/1997 |
| 5623389 | Conductive paste and multilayered ceramic capacitor employing the same A conductive paste comprises a conductive powder and a glass frit, the glass frit consisting of PbO, B2 O3, SiO2, Al2 O3 and Bi2 O3, the content of Bi2 O3 in the... | 04/22/1997 |
| 5617290 | Barium strontium titanate (BST) thin films using boron A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 ... | 04/01/1997 |
| 5604659 | Microelectronic device with centered storage capacitor cavity sized less than feature size A method of forming an integrated circuit capacitor is disclosed comprising the steps of providing a substrate, forming a conductive region at the substrate, and forming an insulating layer on the conductive region and the substrate. The method further co... | 02/18/1997 |
| 5603147 | Method of making a high energy multilayer ceramic capacitor A high energy multilayer ceramic capacitor formed of alternating ceramic and electrode layers, the capacitor being suitable for use in implantable medical devices. The ceramic layers are comprised of a dielectric composition of lead magnesium niobate with... | 02/18/1997 |
| 5599757 | NPO dielectric ceramic compositions and capacitors made therefrom A low temperature fired NPO type ceramic dielectric composition is employed for making high frequency multi-layer capacitors having dielectric constants between 25 and 40 at room temperature, and which do not vary from this base line value by more than &#... | 02/04/1997 |
| 5590017 | Alumina multilayer wiring substrate provided with high dielectric material layer An alumina multilayer wiring substrate having a high capacitance in the substrate on which a VLSI is to be mounted to effectively eliminate electrical noise(s) which may hinder the operation of the VLSI at high speed (frequency). The wiring substrate comp... | 12/31/1996 |
| 5587870 | Nanocrystalline layer thin film capacitors The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lowe... | 12/24/1996 |
| 5585998 | Isolated sidewall capacitor with dual dielectric An isolated sidewall capacitor with dual dielectric, which includes two capacitors. The first capacitor includes a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first con... | 12/17/1996 |
